substrate diffusion 中文意思是什麼
substrate diffusion
解釋
襯底擴散-
Interfacial atoms diffusion or covalence by a circulated - argon ion bombardment process could improve the adhesion strength between the coatings and the uranium substrate
循環氬離子轟擊鍍方法可促進使膜-基界面原子間的擴散或鍵合，有利於提高膜-基結合強度。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層，仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - （ n ~ + ）雙層復合的薄耐壓層（即薄基區）的優點。 -
The source of fe 3 + was from two contributions, one from the [ fefg ] 3 - ions formed by a reaction between the treatment solution and the stainless steel substrate and the other from the diffusion of fe element from the stainless steel substrate into the tio2 thin film at 500 c or a higher calcination temperature
對于液相沉積法制備的ti02薄膜，基片對薄膜的組成和表面形貌有明顯的影響。本實驗中，在石英玻璃，普通玻璃和不銹鋼表面制備了tio :復合薄膜，並討論基體對薄膜的元素組成和表而形貌的影響，提出這種復合薄膜的形成機理。 -
Two sources of si were identified. one was from the sif62 - ions, which were formed by a reaction between the treatment solution and quartz substrate. the other was attributed to the diffusion of si from the surface of quartz substrate into tio2 thin film at 700 c or higher calcination temperatures
薄膜中的si元素來源於二部分，其中一部分來源於反應液與石英玻璃基片反應所生成的[ sif _ 6 ] ~ （ 2 - ）離子，另一部分則來自於薄膜在高溫熱處理（ 700或高於700 ）過程中從石英玻璃表面擴散到薄膜中的si元素。 -
Rf magnetron sputtering that has been broadly used to fabricate a variety of thin films is a kind of physical vapor deposition ( pvd ), which consists of two main microscopic processes, one is the generation and transportation of the vapor phase particles to form the thin film, the other is the diffusion and aggregation of the film atoms on substrate, which leads to the formation of the film
射頻磁控濺射是一種物理氣相沉積技術，已被廣泛地用於各種薄膜的制備。它主要包括成膜氣相粒子（原子或分子）的產生和輸運以及輸運到襯底的成膜粒子在襯底上的擴散、聚集、生長成膜兩大過程。 -
The available equipments can not measure the temperature of the substrate in the diffusion process, and so it is necessary to study the 4 - d temperature distribution in the processed region beforehand. the purpose of this work is to theoretically study the laser induced diffusion process, which is performed within a non - homogenous temperature field
眾所周知，擴散系數是溫度的敏感函數，而現有的實驗裝置無法測得擴散過程中基片內的溫度分佈，因此，為計算雜質濃度分佈，首先需要研究激光照射下半導體基片內的四維溫度場結構。
分享友人