substrate junction 中文意思是什麼

substrate junction 解釋
襯底結
  • substrate : n. 1. 底層,地層。2. 【無線電】(半導體工藝中的)襯底,基底。3. 【生物學】(生態學中的)基層;【生物化學】受質;被酶作用物。
  • junction : n. 1. 接合,連接,連絡。2. 接合點,交叉點,(河流的)匯合處,(鐵道的)聯軌點。3. 【電學】中繼線。4. 【物理學】接頭,結。
  1. Simox soi wafers produced by ion implant processes were used in this experiment. the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures. the soi transistors have been the key devices for achieving the low voltage operation and low power consumption, because of the small junction capacitance, the small s - factor, and the small substrate bias effect

    這三種模型分別是:第一,將傳統的mos電容結構應用到soi材料上來進行c - v , i - v測試,分析計算soi材料的重要電學性能參數;第二種,針對soi材料的特殊結構,為了適應生產線上對無損soi園片進行電學性能測試的要求,應用mosos結構來對soi材料進行電學性能表徵。
  2. The impacts of the substrate pn junction isolation on the inductor quality factor ( q ) are studied and experimental results show that a certain deep substrate pn junction isolation achieves good improvement

    結果表明這種方法是可行的, b一一定深度的襯底pn結隔離能有效的使q值提高。
  3. A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented. the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors. the substrate pn junction can be realized in standard silicon technologies without additional processing steps

    提出了一種新的方法來減小硅襯底損耗提高集成電感的q值:在硅襯底形成間隔的pn結隔離以阻止渦流減少損耗,這種方法工藝簡單且與常規硅集成電路工藝兼容。
  4. The research and application of the diamond films were reviewed in this paper, and the nucleations on different substrates in hfcvd ( i lot filament chemical vapor deposition ) system were introduced. the improvement of the diamond nucleation on si, ni, cu was investigated, in order to deposit diamond of high density. the p - n junction between b - implanted diamond films and n - type si substrate was investigated

    本論文簡要敘述了金剛石薄膜的研製進展和應用,介紹了用化學氣相沉積法( hotfilamentchemicalvapordeposition )在不同的襯底上的金剛石薄膜的制備方法和形核,並對si 、 ni 、 cu三種不同的襯底的金剛石膜研究了如何增大形核密度、提高形核質量。
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