temperature band 中文意思是什麼
temperature band
解釋
溫度帶- temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
- band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
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It is designed according to electrical stove or microwave oven request. heating pipe adopts high temperature resistance mgo powder as the insulation medium and the stainless steel case is passed oxidation deal through the advanced web band protection oven 1050c in order to become the a special oxidation layer and improve the high temperature oxidation and bittern corrosive performance of the heating pipe. the heating tube has high power density and strong heat radion. this product with good safe performance can work normally after 3000hrs life test
加熱管選用耐高溫氧化鎂作絕緣介質，不銹鋼外殼經過先進的網帶氣體保護爐1050的氧化處理，形成一種特殊的氧化層，提高電熱管的抗高溫氧化及鹽鹵的腐蝕性能。電熱管的功率密度較高，熱輻射能力強。產品經長達3000h的壽命試驗后，仍能正常工作，安全性能好。 -
Two high q bandpass filters at millimeter wave band based on substrate integrated waveguide ( siw ) and low temperature co - fired ceramics ( ltcc ) are designed in this thesis, and one is realized
本文主要講述了基於介質集成波導（ siw ）技術和ltcc工藝的毫米波頻段高q濾波器的研製。 -
The temperature cracks are calculated by use of a crack band model, and the stress and cracking of the concrete wall are computed by using the half - analytical iteration method
採用裂縫帶模型計算溫度裂縫，用半解析迭代法進行了混凝土墻的溫度應力和開裂計算。 -
A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。 -
Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices
3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。 -
Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev
Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。 -
Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev
= zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。 -
Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature
氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。 -
This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions
它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。 -
Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance
室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。 -
With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature
含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。 -
Electric heating band warm - up the crankcase in the compressor in short time which will help the compressor to start easily by higher the temperature temporarily
電加熱帶線內芯採用鎳鉻絲cr20ni80為電熱材料，外包覆硅橡膠為絕緣導熱材料。 -
The main products are just like electric heater for freezer, metal heating tube, heating band cable, rv rvv wire and cable series, power cord plug cable, component for thermoatat, temperature sensor etc
公司現主導產品為家用冰箱電加熱器金屬管電加熱器電熱帶發熱電纜rv rvv系列電線電纜電源線插頭限溫器組件溫度傳感器組件等。 -
The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion
在高溫部分，材料呈現小極化子跳躍形式輸運特徵；實驗研究了不同偏置電流對薄膜的相變影響，表明電場可以引起材料中磁性的變化和晶格畸變，導致相變溫度點向低溫方向移動；材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。 -
The laser crystal also presents other attractive features, such as strong and broad absorption band, makes this laser medium to be an excellent candidate for efficient diode pumping without temperature controlling
該晶體可摻入較高濃度的yb離子（ 0 . 5 ? 10 ） ，且不存在濃度猝滅。 -
Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on
Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。 -
Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity
Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。 -
Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices
被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。 -
Fourthly, by an analysis of log - amplitude scintillation due to troposphere turbulent, it is shown that the relative humidity and temperature are the major factor impacted on log - amplitude scintillation, at microwave and millimeter - wave band
第四，根據大氣湍流理論分析了在微波和毫米波波段影響幅度閃爍的主要因素是大氣相對濕度和溫度。 -
Its band gap is 2. 42ev at room temperature. cds nanoparticles show significant quantum - size effect when their sizes are smaller than 6nm
當cds粒子的粒徑小於其激子的玻爾半徑（ 6nm ）時，它能夠呈現出明顯的量子尺寸效應。
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