threshold depth 中文意思是什麼

threshold depth 解釋
低限深度
  • threshold : n. 1. 門檻；入口，門口。2. 【心理學】閾限。3. 界限，限度。4. 【物理學】臨界值，閾。5. 入門，開始，開端。
  • depth : n. 1. 深；深度。2. （色澤的）濃度；（聲音的）低沉；（感情等的）深厚，深沉，深刻。3. 進深。4. 〈常 pl. 〉深處；深淵，深海，海。5. 正中，當中。6. 深奧，奧妙。
  1. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  2. The regularity of accumulation distribution is ascertained and directs the exploration orientation. the main results obtained in this paper are : 1. the analyses of hydrocarbon - bearing rock, reservoir, caprock and oil & gas reservoir indicate the source of oil & gas, the space for reservoir, requirement for preservation, reservoir type and its basic characters. 2. it is realized by the analyses of sealing up capability of caprock and faults, and fault ' slatter stability from microcosmic and macroscopic that the wide - spread regional caprock of nm t prevented oil & gas of neogene from diffusing fault movement in neogene less violated and fault displacement decreased, which are advantageous for the preservation of oil & gas reservoir. and latter structure movement usually formed the accunulation of oil & gas in neogene. 3. the research of history of hydrocarbon generation and expulsion of main hydrocarbon - bearing rock in qikou depression reveals the threshold depth and the fime of hydrocarbon generation and expulsion

    項目研究取得了如下認識： 1 、對烴源巖、儲集層、蓋層及油氣藏展開分析，明確了歧口凹陷上第三系油氣藏的油氣來源、儲集場所、保存條件和油氣藏類型及其基本特徵； 2 、從微觀和宏觀上對蓋層的封蓋能力以及斷層封堵和後期穩定性進行分析，認識到明下段區域蓋層的廣泛分佈阻止了上第三系油氣藏的油氣逸散，同時上第三系斷層活動減弱，斷距較小，對油氣藏的保存較為有利。
  3. 4. it is concluded that the es3 is a main member to accommodate the oil expelled from the source rock of the es3 member, that two assignment units of the type i are prospective areas where faulted reservoirs, fracture reservoirs, lithologic deposits may well be founded. the depth of threshold is among 2600 - 2800 meter and that of expulsion is around 3100 - 3400 meter, so the source rock of sha er member is totally immature and that of sha san member is partly mature

    4 、從歷史演化角度和二次運移理論出發，研究了德南窪陷下第三系低熟油灶的油氣運移作用和分配，提出初次分配主要指向是沙三下段；內部成藏系統是有效的成藏系統，其內部油氣的再次分配主要指向德3井南和德1井南是兩個類油氣分配單元；德南窪陷生烴深度2600 - 2800米間，排烴起始深度在3100 - 3400米間，按目前下第三系地層埋深深度，則沙一段生油巖基本上處于未成熟狀態，沙三中、下生油巖處于低熟狀態，僅在窪陷深部分佈成熟生油巖。
  4. The result corrected by former result was to judge the land to be suitable for cultivation or not. in the end, productivity index threshold under different suitable - levels was determined by analyzing the frequency histograms distribution of 4 productivity index. the result shows that the productivity index criteria of reserved land in beijing is that altitude 800 m, slope 15, soil depth 30 cm and gravel content 15 %

    在生產性指標方面，以北京市土地開發復墾潛力調查評價為基礎，運用相關分析、主成分分析確定指標為海拔、坡度、土層厚度和礫石含量；對指標進行聚類，根據聚類結果對原有評價結果進行修正並判定后備土地資源的宜耕性；通過分析多因素綜合作用下四項指標的頻率分佈情況，確定上述四個生產性指標在不同宜耕等級下的閾值。
  5. The analytical solutions to 1d schr ? dinger equation ( in depth direction ) in double - gate ( dg ) mosfets are derived to calculate electron density and threshold voltage

    摘要推導了雙柵mosfet器件在深度方向上薛定諤方程的解析解以求得電子密度和閾電壓。
  6. Lastly establish theoretical, industrial threshold value of organic enrichment of source rocks and grading evaluation criterion under different source rocks thickness, hydrocarbon potential, superface depth conditions

    建立了不同厚度、不同生烴潛力、不同頂面埋深條件下烴源巖的有機質豐度理論下限、工業下限及分級評價標準。
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