transistor structure 中文意思是什麼

transistor structure 解釋
晶體管結構
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  • structure : n. 1. 構造，結構；組織；石理，石紋。2. 建造物。3. 【化學】化學結構。4. 【心理學】（直接經驗中顯現的）結構性，整體性；整體結構。adj. -d ,-less adj.
  1. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  2. First, according to the actual organic static induction transistor establishing the physical model and selecting appropriate structure parameters, solves poisson ' s equation by adopting finite element method

    首先根據實際製作的有機靜電感應三極體建立物理模型，選取合適的結構參數，採用有限元法求解泊松方程。
  3. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  4. Compared with quasi - resonant, it can reduced transistor voltage stress and improved load range and stability in low frequency range. because of the structure of three - level, transistor voltage stress and filter can be reduced significantly

    與傳統的準諧振變換器相比，該變換器功率器件的電壓應力大大降低，在很窄的開關頻率變化范圍內實現寬負載范圍的軟開關。
  5. Next, basing on discrete electric potential, plots the distributing figure of the electic potential and electic field, and analyzes relationship between the operational characteristics of static induction transistor and the structure parameter and bias voltage

    其次依據求得的離散電位值，繪制相應的電位分布圖形和電場分布圖形。最後通過對圖形的分析，解析有機靜電感應三極體的工作特性與器件結構參數和所加偏壓的關系。
  6. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  7. In the design of the transistor structure, the structure and performance of sige hbt are first simulated with ise tcad. then, taking into consideration the actual process [ 3 ], the optimization of the design is performed

    首先，我們利用isetcad軟體對sigehbt的結構和性能進行了模擬，並結合實際的工藝條件對器件結構進行設計[ 3 ] 。
  8. First, on the base of theory analysis and computer simulation, this paper uses interleaved two - transistor forward circuit to realize the main circuit of boost dc - dc converter, and also presents the structure, the principle and the design. the method is proved to be effective by simulation

    首先，在理論分析和計算機模擬的基礎上，本文選擇交錯並聯雙管正激變換拓撲作為升壓型直直變換器的主電路，對它進行了電路原理分析和具體的設計，模擬結果驗證了該設計方法的可行性與有效性。
  9. This thesis probes beneficially into numerical calculating and analyzing of the two - dimension model of organic static induction transistor by adopting finite element method, and builds theory foundation for further analyzing systematically operational mechanism of organic static induction transistor and optimizing design of structure parameters for the future

    本論文應用有限元法對有機靜電感應三極體二維模型的數值計算及解析進行了有益的探索，為今後進一步系統性解析有機靜電感應三極體的工作機理和進行結構參數的優化設計構築了理論基礎。
  10. Thus, the sige technology is very promising. the research in this thesis focuses on the design of sige devices. the main job includes the design of transistor structure and the optimal design of the base buffer

    本論文的研究課題是sigehbt器件的設計，主要工作包括兩個方面：一，晶體管的結構設計；二，基區緩沖層的設計。
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