ultra-high vacuum chamber 中文意思是什麼
ultra-high vacuum chamber
解釋
超高真空艙-
Finally, eels and aes were combined to study initial oxidation processes of uranium, niobium and uranium - niobium alloys in an ultra - high vacuum chamber at the temperature of 373k, 473k, 573k and 673k
最後,還利用eels和aes研究了超高真空下不同溫度( 373k 、 473k 、 573k和673k )時鈾、鈮及鈾鈮合金的初始氧化過程。 -
In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數,在單晶硅襯底上濺射-淀積了tini薄膜,並進行了超高真空退火, dsc法測得其馬氏體逆相變峰值溫度為72 ,利用能譜分析( eds )技術測得其ti含量約為51at ,通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射( xrd )分析,發現在用大功率( 2000w )直流磁控濺射法制備tini薄膜過程中,存在ti 、 ni與si的雙向擴散,發生了界面反應,並有三元化合物ni _ 3ti _ 2si生成。 -
The synthesis of a single - crystal, ultra - long, uniform lead oxide nanowires were observed in a high vacuum chamber with the electron beam bombard in the tb doped pt thin films derived from sol - gel process
在高真空環境中用高能量電子束對pt t薄膜進行蒸發這種全新的方法,制備出直徑在6 60nxn之間、長徑比高達100的筆直pbo單晶納米線。
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