undoped 中文意思是什麼

undoped 解釋
無摻雜的
  1. Further experimental investigation and theoretical analysis on the structure and properties of undoped and doped polyaniline are carried out by using several inspecting methods and instruments. using fuming sulfuric acid sulfonating emeraldine base ( eb ), sulfonated polyaniline ( span ) is synthesized. the results show that it has higher solubility and good conductivity, span with different sulfonation. degree ( sd ) possesses different conductivity

    藉助於一系列的現代分析手段對本徵態及摻雜態的聚苯胺的電學、光學、熱學等性能進行了分析，結果表明，本徵態聚苯胺具有高的熱穩定性，不同酸摻雜的聚苯胺具有不同的光學、電學性能。
  2. Positron lifetime study of defects in undoped si - inp

    中缺陷的正電子壽命研究
  3. Investigation of residual donor defects in undoped and fe - doped lec inp

    非摻及摻鐵磷化銦中的殘留施主缺陷
  4. Preparation of semi - insulating material by annealing undoped inp

    高溫退火非摻雜磷化銦制備半絕緣材料
  5. 2 、 in order to solve the phenomenon of the outdiffusion of the base dopant, two solutions are suggested : 1 ) the sige : c base can effectively solve the outdiffusion problem ; 2 ) the undoped buffer layer can constrict the outdiffusion phenomenon

    2 、為了解決基區雜質外擴現象，提出了兩種方案: 1 ）採用摻碳的sige : c基區層，能夠有效消除外擴問題; 2 ）採用未摻雜的緩沖層i - sige ，能夠有效抑制外擴現象。
  6. In addition, it is generally accepted that the compensation of carbon acceptor by el2 donors is a main factor, which determines the semi - insulation property of undoped lec si - gaas single crystal

    另外，目前普遍認為非摻si - gaas單晶的半絕緣特性是淺受主碳和深施主el2相互補償的結果。
  7. Growth and characterization of undoped polycrystalline zno films

    熱蒸發分解法制備多晶氧化鋅薄膜以及性能分析
  8. In this thesis, three systems, namely, perfect and defect sno _ 2 ( 110 ) surfaces, ti and ru - doped surfaces and the adsorptions of small molecules on above perfect surfaces have been studied in details by using the first - principles method with the combination of pseudopotential plane - wave and atomic basis sets. the structural stability, surface states and the surface chemistry of undoped and metal doped sno _ 2 ( 110 ) surfaces have been discussed, which can provide the theoretical rules to improve the surface properties of this special functional material

    為了深入了解sno _ 2表面的電子結構本質及其化學反應性質，本論文採用贗勢平面波和原子軌道基組相結合的第一性原理方法，詳細考察了三種類型體系，即sno _ 2 （ 110 ）完整和缺陷表面、 ti和ru摻雜表面、以及典型小分子在上述完整表面的吸附，揭示了sno _ 2 （ 110 ）及其金屬摻雜表面的構型穩定性、表面態及其對表面化學反應性的影響，為該類型表面功能材料的改性提供理論依據。
  9. Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method

    非摻雜半絕緣砷化鎵單晶深能級el2濃度紅外吸收測試方法
  10. Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films

    Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。
  11. In the third ductility region, the reduction in area of the sn - undoped steel is larger than that of the sn - doped steel. this means that the hot ductility of the sn - undoped steel is better than that of the sn - doped steel

    在第類脆性溫度區內，不含sn鋼的斷面收縮率大於含sn鋼的斷面收縮率，即不含sn鋼的熱塑性要比含sn鋼的熱塑性好。
  12. Calculations of thermodynamic properties for undoped and sr - doped lamno 3 perovskite oxides

    3鈣鈦礦氧化物熱力學計算
  13. Based on the hot tensile test results, there exists a cooling rate at which a minimum reduction in area occurs and the hot ductility of the sn - doped steel is worse than that of the sn - undoped steel. when the cooling rate is lower or higher than 10 / s, the hot ductility is increased

    連續冷卻到750 800范圍內拉伸時，存在一個冷卻速率（ 10 s ） ，以這個冷卻速率進行冷卻，試樣的斷面收縮率最小，熱塑性最差；當冷卻速率大於或者小於這個冷卻速率時，試樣的斷面收縮率均會增大，熱塑性增強。
  14. Study of compensation defects in undoped semi - insulating inp by positron lifetime spectroscopy

    中補償缺陷正電子壽命譜的研究
  15. The temperature at which the ra % is 60 % is about ~ 850 for the sn - undoped steel and ~ 910 for the sn - doped steel. the width of the ductility region of the sn - doped steel is obviously larger than that of the sn - undoped steel

    不含sn鋼的塑性凹槽上限大約為850 ，含sn鋼的塑性凹槽上限大約為910 ，含sn鋼的塑性凹槽上限明顯大於不含sn鋼。
  16. Bn films doped with s are n type conductivity. undoped bn films exhibit a resistivity of 1. 8 1011 cm and those of doped are 2. 13 105 cm ， decreased by six order of magnitude. s fountain temperature and substrate temperature impact the resistivity evidently

    S源加熱溫度對氮化硼薄膜的電阻率有直接影響，表現在隨著s源加熱溫度的升高，氮化硼薄膜的電阻率下降的趨勢加快。
  17. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  18. In undoped lec si - gaas single crystal, the density of dislocation is usually very high and the dislocations easily form the cellular structure. the formation and distribution of other impurities and point defects are closely correlative with the cell structure and then result in the non - uniformity distribution of electrical and optical characteristic of gaas material

    而非摻lecsi - gaas中的高密度位錯，往往形成胞狀結構；其它雜質和點缺陷的形成與分佈與該結構密切相關，並導致gaas材料電學和光學特性的不均勻。
  19. In this dissertation polyaniline conjugated conducting polymer with different structural texture and properties is prepared, using ( nhu ) 2s3oa / llci solution system. the molecular structure of undoped polyaniline is characterized. polyaniline with different conductivity can be gotten by changing the type of dopant and doping condition

    再採用（ nh _ 4 ） _ 2s _ 3o _ 8 hci溶液體系制備出不同性能的聚苯胺導電聚合物，對不同的鹽酸濃度、不同氧化劑與苯胺的摩爾比、不同的溫度下合成的聚苯胺進行了性能上的比較，並對本徵態聚苯胺的結構進行了表徵。
  20. Undoped gaas semiconductor as photoconductor detector materiel is used and gaas photoconductor detector with double microstrip structure is developed. a set of techniques of making gaas detector is found during experiments. in order to improve property of the detector, the detector is irradiated by electron

    我們採用不摻雜的高純度的砷化鎵作為我們光電導探測器的材料，研製出了具有微帶結構的gaas光電導探測器，並經過深入仔細的研究，摸索出了一套製作gaas光電導探測器的有效工藝方法。
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