v curve characteristic 中文意思是什麼

v curve characteristic 解釋
v 形曲線特性
  • v :
  • curve : n 1 曲線；彎曲；彎曲物。2 曲線規 （＝French curve）；【機械工程】曲線板；【棒球】曲線球；【統計學...
  • characteristic : adj 有特性的；表示…特性的，…特有的。 Japan s characteristic art 日本特有的藝術。n 特性，特徵，性...
  1. V ) based on cbr ( cased - based reasoning ) principle and characteristic of garment structure graphics design - strong experience - oriented, this paper selects cbr as the basic theory of intelligent subsystem, which creatively combines point - grading, vectorgraph method, theory of fuzzy reasoning and bezier curve algorithm together and devise case reuse and revise algorithm

    （ 5 ）在基於實例推理（ cbr ）原理及服裝結構圖形設計特點?強經驗性的基礎上，選用cbr為基於autocad的服裝結構圖形設計子系統的解決方案。創造性的將點位移及矢量法膜糊推理原理和bezier曲線演算法相結合，設計了實例重用和實例修正演算法。
  2. A self - made device used to measure the hydrogen release curve ( v - t ) of coated tih2 / and tih2 was founded, and the results show that the hydrogen released characteristic of coated tih : had been improved and hydrogen released time had been delayed

    利用自製的釋氫試驗裝置，測定了tih _ 2包覆劑的釋氫曲線（ v - t ） ，並和未包覆的進行了比較，證明包覆對改善tih _ 2的釋氫特性，延遲釋氫時間確有效果。
  3. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法，本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法，通過選擇單電子島電子數的主要狀態，建立單電子晶體管主方程，然後求解主方程，求得單電子晶體管spice等效模型的受控源的非線性函數，然後利用集成電路輔助分析軟體spice的abm （模擬行為建模）建立單電子晶體管（ set ） spice等效模型，利用set的等效模型對單電子晶體管v - i特性進行模擬，實驗證明此方法與直接解主方程法相比具有一定的精度。
  4. The research indicate that the structured soft clay has below several characteristic, the viscous strain is produced during the stage of primary consolidation and of second consolidation, and in the prophase, the relation of stress - strain - strain rate is unique, so the form of constitutive model, such as, f ( v ', e ) = 0, f ( ' v, e, t ) = 0, ca n ' t describe strain behavior of soil skeleton rationally ; the time - dependent properties involve three aspects, in addition the time - dependent strain, apparent preconsolidation pressures that depend on strain rate, and the effect of creep compression on apparent preconsolidation pressures ; because of holding structural strength, the mechanics characteristic is determined by the magnitude of stress, and the compression curve is composed of several sections. by combining structural yield stress and it ' s characteristics with the improved time line model, a new one - dimensional elastic visco - plastic consolidation model is established

    研究結果表明，結構性土的固結過程具有以下特性：主固結和次固結階段都包含有因土骨架的粘滯性移動而產生的變形，而且在正常固結階段，存在應力?應變?應變速率的唯一性， f （ _ v ， e ） = 0 、 f （ _ v ， e ， t ） = 0形式的本構關系不足以描述土骨架的變形行為；固結壓縮過程中的時間效應包括三個方面的內容，除了應力應變關系與時間相關外，還包括粘滯性變形引起表觀前期固結壓力增加和屈服應力的應變速率效應；軟土的結構性使其力學特性與應力水平相關，壓縮曲線具有分段性。
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