v curves 中文意思是什麼

v curves 解釋
向曲線
  1. Three kinds of results are obtained by simulation calculating the two models : the composed vector diagrams of the axial velocity ( v ) and the radial velocity ( vr ) at the different times in the symmetry section ; diagrams of curves of the velocity vector ( v ^ ) and ( vr ) at the different times in the different sections ; diagrams of the secondary flow vectors at the different times in the different sections

    我們對兩種不同直徑的s型血管進行了有限元模擬計算，得到三種結果：在對稱面內不同時刻的軸向速度v _和徑向速度v _ r的合成矢量；在不同截面不同時刻的速度分量v _和v _ r的曲線圖；在不同截面不同時刻的二次流的矢量圖。
  2. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  3. For the first time, we reported the barrier height of au / algan is 1. 08ev by analysis on various i - v curves under corresponding temperatures. 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation

    3 、採用金屬鎵層氮化技術，利用我們自行改造的熱蒸發設備和氨氣氮化設備，在無定形石英襯底上生長出具有擇優取向的多晶gan ，取得了一些階段性的成果。
  4. By numerical work, the time evolvement curves of the corrected solution, phase orbits and v - i characteristics demonstrated the deterministic chaos

    通過數值方法給出解的時間演化曲線、相軌道和伏安特性曲線，它們描述了系統中存在的確定性混沌。
  5. The experimental results show that these two algorithms are efficient and computational complexity is low. ( 2 ) we prove that necessary and sufficient conditions for bounded and closed ip curves are that second - degree polynomial factor curves in the leading binomial product v abstract decomposed from the leading form of [ p are ellipses

    （ 2 ）證明了隱含多項式曲線封閉有界的條件是隱含多項式分解的首二次因子積中的二次因子曲線是橢圓曲線，並給出了避免隱含多項式曲線自相交的條件。
  6. As a result, the p - v curve of the target was a quasi - isentropic compression curve, which consisted of small hugoniot curves ( similar to isentropic curves ) from different original states, and was located betwee n the hungoniot curve and isentropic curve but closer to the latter. finally, on a two - stage light - gas gun, titanium alloy projectiles ( with mass of 0. 35 ~ 2. 80g ) were driven intact to hypervelocities as over 15km / s by 93w - ofc - tc4 - a1 - mb2 system flier - plate with graded wave impedance, although the fl

    在二級輕氣炮上，利用93w - ofc一tc4一al一mb :系波阻抗梯度飛片成功將克量級（ 0 . 35一2 . 809 ）欽合金二級飛片發射到了15kln / s以上的超高速度，且二級飛片主體是完整性，但其平面性和飛行姿態還有待於今后的深入研究。
  7. Abstract : from the equilibrium and continuity conditions of wave impedance boundary of stress wave and velocity, wave, the paper derives the expressions of reflection coefficient and transmission coefficient of stress wave and velocity wave, further, discusses the characteristics of f - v curves at different impedance ratio, and analyzes the application of these characteristics to ascertain the defects of pile and soil resistance distribution around pile by practical engineering examples

    文摘:該文從力波及速度波在波阻抗界面的平衡及連續條件，推導了力波、速度波的反射系數、透射系數表達式，進而討論在不同阻抗比時的f ? v曲線特徵，並引用幾個工程實例對應用這些特徵判定樁身缺陷及樁周土的阻力分佈進行了分析。
  8. In sum, the main contents of the thesis include : 1. analyses of the impact of different load characteristics on static voltage stability with the v - p - and - v - q curves of power system loads

    歸納起來，本文的主要內容包括: 1 .應用電力系統負荷的電壓-功率特性曲線，分析了不同負荷的負荷特性對靜態電壓穩定性的影響。
  9. Nc machining requires " interpolation " algorithms that accurately and efficiently generate sequences of reference position, distributed according to a prescribed feedrate function, along the tool paths. this paper present a systematic derivation of the proper taylor series coefficients for variable feedrate interpolators. when the path is ph curves, detailed formulations for instances are presented where the feedrate v is specified as a constant, the function of the time t, the arc length s and the local curvature k

    對于nc加工要求插值演算法沿著刀具路徑準確、有效的生成參考點序列（根據預先指定的速率函數進行分佈）的實際工程需要，本文系統地推導了變速率插值運算元的泰勒系數，給出了當路徑為ph曲線，速率v為常數，及時間t 、弧長s 、曲率k的函數時具體的插值運算元。
  10. These results show that the dc i - v curves of series arrays emerged some transition location and the ic decreased at the same time, but the dc i - v curves of parallel arrays were similar to what the single josephson junction ' s was

    由計算結果可看出，串聯陣列的直流i - v特性曲線上出現了多個轉變點，臨界電流也有所降低，而並聯陣列的直流i - v特性曲線和單個約瑟夫森結的直流i - v曲線類似。
  11. The charging - discharging curves look like the letter " v " and have no flat plateaus due to the different sizes of the micropores. increasing the httmax, the micropores in ant samples become fewer and smaller, therefore the charging - discharging capacities decrease. when httmax = 2100, the charging - discharging capacity reaches the minimum since the number of the micropores reaches the minimum and the size of them become very small, the number of graphite crystallite in ant samples is still few and the size of them is also small

    在htt _ （ max ） 2100的范圍內， ant試樣屬于亂層結構，石墨微晶尚未出現或數量很少，貯鋰機制為「孔隙貯鋰」 ，由於孔隙的大小不一，插鋰時克服阻力所需的電位也不同，因此充、放電曲線呈「 v 」字形，無平穩的充、放電電位平臺；隨著htt _ （ max ）的增大，試樣中孔隙逐漸變小、變少，充、放電容量也逐漸變小。
  12. The mechanism of storing lithium - ions was to store lithium ions in the micropores of the samples. since the micropores which formed in the process of liquid phase carbonization had different sizes, the smaller the micropores, the lower the potential to overcome the resistance for inserting lithium ions. the charging - discharging curves looked like the letter " v " and had no flat plateaus, the charging - discharging capacities were high but faded rapidly

    Htt _ （ max ） = 2000以前，石墨微晶尚未出現，貯鋰機制為「微孔貯鋰」 ；由於微孔的大小不同，插鋰時克服阻力所需的電位也不同，微孔愈小，所需電位愈低，因此充、放電曲線為「 v 」字形，無充、放電電位平臺，充、放電容量高，但容量衰減快；隨著htt _ （ max ）的增大，液相炭化過程中所形成的微孔逐漸變小、變少，因此充、放電容量也逐漸變小。
  13. The device i - v characteristic curves " shangqiao at high temperature while not at low temperature shows the hot electrons effect at high temperature result in this

    高溫下器件i - v特性曲線有上翹現象出現，低溫情況下未觀察到此現象，這是由於高溫下的熱電子效應所致。
  14. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  15. It is considered that, the physical process of generating quasi - isentropic compression on target via flier - plates with graded wave impedance can be stated as follows : a series of hungoniot curves with different original state forms the p - v relation of the target when impacted by a flier - plate with graded wave impedance

    梯度飛片撞擊靶板獲得的p - v線是一組通過靶材料不同起始狀態點的hugoniot線的連線，這條連線可以近似看作是由小段小段等熵線連接而成的「準等熵線」 。
  16. The physical process of generating quasi - isentropic compression on target via flier - plates with graded wave impedance might be considered as the successive overlap of a series of small shock loading waves generated by the transition layers in the flier - plate. as a result, the p - v curve of the target was a quasi - isentropic compression curve, which consisted of small hugoniot curves ( similar to isentropic curves ) from different original states, and was located between the hungoniot curve and isentropic curve but closer to the latter

    波阻抗梯度飛片對靶板的壓縮過程是一系列弱沖擊加載波相繼發生作用疊加的結果，靶板由此獲得的p - v線是一組通過不同起始狀態點的hugoniot線的連線，這條連線可以近似看作是由小段小段等熵線連接而成的準等熵線。
  17. So, with the exception of the later sylvania 12ax7as, all these tubeshave essentially the same characteristics - the i vs v curves

    所以，除了問世時間稍後的喜萬年12ax7a ，所有的這些膽管都具備基本一致的電氣特性- -屏壓、流曲線。
  18. These dc i - v curves by numerical calculation duplicate very well the results of experiment

    此串聯、並聯陣列的數值計算結果與我們實驗所觀測到的結果也是一致的。
  19. Polycrystalline diamond films were deposited on n - type si substrates. in order to achieve a better distribution of the implanted element, boron ions were implanted by two steps. the i - v curves were studied, the p - n junction effect is very evident

    在n型引襯底上沉積一層連續的金剛石膜，通過二次離子注入的方法使b離子比較均勻的分佈在金剛石膜中，通過測量i - v曲線，可以明顯的看出p - n結效應的存在。
  20. Chapter three focuses on the manufacture of superconducting josephson junctions and the basic characteristics of the type manufactured josephson junctions were studied from experiment and analyzed from theory. these dc i - v curves of josephson junctions were observed separately

    第三章則給出了超導約瑟夫森結的製作過程，並對所制得的幾類典型約瑟夫森結進行了實驗研究與理論分析，分別得出了它們的直流i - v特性曲線。
分享友人
分享到 Line

分享到臉書