vacancy concentration 中文意思是什麼

vacancy concentration 解釋
空位機制
  • vacancy : n. 1. 空虛，空；空間，空隙，空處；空地，空房（等）。2. 精神空虛，心不在焉，沒精神，出神，茫然若失。3. 空位，空額。4. 閑暇；無所事事。
  • concentration : n. 1. 集中。2. 【化學】提濃，蒸濃，濃縮；濃度；稠密度；【礦物】汰選，選礦，富化。3. 集中注意，專心。
  1. In this paper, the relationship of the thermal donor with point defects was investigated by injection of different concentration and distribution vacancy via 1250 ?, rtp preannealing in different gases ( n2 o2, ar ). the influence of rtf preannealing on generation at 450 ? and annihilation at 650 ? of thermal donors ( td ' s ) was not detected

    本論文通過不同氣氛（ n _ 2 ， o _ 2 ， ar ） 1250 30s高溫rtp預處理在矽片中引入不同濃度和分佈的空位，進而用四探針和擴展電阻研究450不同時間熱施主的生成特性和650熱施主的消除特性，從而確定熱施主和點缺陷之間的關系。
  2. During this process, the level of doping concentration exceeds the density of cd vacancy in the crystal. in addition, the preparation of au contact on cd1 - xznxte wafers was studied. after further thermo - treatment, the stable ohm au contact was achieved

    此外，對于在cd _ （ 1 - x ） zn _ xte晶體上制備穩定歐姆接觸電極進行了相應的研究，制定出相應的蒸鍍及退火工藝。
  3. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  4. The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content. in this paper, the electrical conductivity reaches maximum value at x = 0. 4. below the temperature corresponding to the maximum value, the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism, charge compensation of oxygen vacancy dominates electrical conduction at high temperature, and oxygen vacancy acts as traps to catch carriers, resulting in the decrease of carriers concentration and mobility

    通過電學和熱學性能測試結果表明，電導率隨著sr含量的增加以及溫度的變化都出現了極大值，在本論文中，在sr含量為0 . 4時電導率值最大，電導率最大值對應的溫度隨著sr含量的增加而降低，這是由於在低溫下以小極化子導電機理為主，在高溫階段則是氧空位的電荷補償占據主導作用，氧空位使得載流子的濃度和可動性減弱，從而導致電導率降低。
  5. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  6. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
  7. Effect of vacancy concentration on elastic constants of aluminum under high pressures

    高壓下空位濃度對鋁的彈性性質的影響
  8. The charge related to esd can be compensated by oxygen environment, oxygen environment works mainly through making up oxygen vacancy and repairing energy band distortion in time. heating the sample and reducing defect concentration can reduce the charge related to inner defects

    對于樣品表面電子受激解吸造成的充電可通過氧環境提供補償，氧環境主要是通過及時補充氧空位、修復能帶扭曲起作用的；對于電子束調制內部缺陷造成的充電可通過加熱試樣減輕缺陷濃度來補償。
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