vacuum-annealed 中文意思是什麼
vacuum-annealed
解釋
真空退火的-
The corrosion behavior of nanocrystalline ( nc ) copper bulks with various grain sizes prepared from igc ( inert gas condemsation ) and vacuum annealing in comparison with conventional microcrystalline ( mc ) copper ( as - rolled and electrolytic ) in acid copper sulphate solution and neutral solution containing chlorides under free corrosion conditions and anodic polarizations has been studied using potentiodynamic polarization, potentiometric analysis, cyclic voltammetry and electrochemical impedance spectroscopy. x - ray diffraction was used to estimate the grain size of the annealed nc copper. field emission gun scanning electron microscopy and x - ray energy - dispersive spectroscopy was used to characterize the surface morphology and analyze the surface composition after the polarization and potentiometric test of both nc and mc copper
本文研究了用igc （惰性氣體蒸發凝聚原位溫壓法）制備並真空退火到不同晶粒尺寸的納米晶銅和微米晶銅（冷軋紫銅、電解銅）在酸性硫酸銅溶液和中性含氯溶液中，在自腐蝕狀態和陽極極化狀態下的腐蝕性能。使用了動電勢極化、電位測定、循環伏安法（ cv ）和電化學阻抗譜（ eis ）等方法。 x -射線衍射（ xrd ）的方法用來估算納米晶銅晶粒尺寸。 -
Study on the fabricating method the fe / al2o3 / fe mtj and co / al2o3 / feni mtj are prepared by ion - beam sputtering systems. the fexcu ( 1 - x ) granule films were evaporated directly using a high vacuum electron beam evaporation. some samples of granule films are annealed at 340c
用高真空鍍膜機制備了fe _ xcu _ （ （ 1 - x ） ）系列顆粒膜，並對部分膜做了加熱退火處理，樣品被加熱到340並且保溫2小時。 -
Shenyang alloy material co., ltd. ’ s transferring item is one of the important transforming items for us, which has approved by national financial department by means of using japan ' s loan, the importance of item includes the advanced half continual vacuum melting furnace 、 simultaneous x - ray spectrometer system 、 fluorescent analyzed instruments ; advanced annealed furnace 、 vacuum annealed furnace and other heat treated furnish etc ， and others totally 50 types
沈陽合金材料有限公司的搬遷改造項目是國家發改委和財政部批準的國家利用日元貸款改造重點項目之一，項目重點改造內容有引進國外最先進的半連續真空感應熔煉爐、 x熒光分析儀、直讀光譜儀；國內先進的罩式退火爐、真空退火爐等熱處理設備及一些冷加工設備，共增添新設備五十多臺套。 -
The explosive welding specimen were also annealed in vacuum at various elevated temperature from 1000 to 1300. optic microscope, sem, tem and eds ( electron diffraction scattering ) techniques are applied to observe the microstructure and the element profiles of the welding interface and the interdiffused layer, reveal the interdiffused performance of alloy elements at elevated temperature, and analyze the structure and composition of the precipitated phases. moreover, the tensile strength of welding line with the two different techniques and various welding parameters were carried out
採用金相、掃描電鏡、透射電鏡、能譜等多種實驗手段對焊接結合層的微觀組織結構、高溫下nb - 1zr與不銹鋼合金元素的互擴散行為，形成的互擴散層的成分、金相組織和擴散層中的析出相的相組成和相結構等，都進行了較為詳細的分析，並且對在不同工藝、不同焊接參數下焊接的nb - 1zr合金和不銹鋼的焊縫做了強度實驗研究。 -
X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming
研究結果表明，由於雜質fe的摻入降低了smco薄膜的磁性能；制備態smco薄膜為非晶態結構，矯頑力hc隨著薄膜厚度的增加而減小，剩磁比mr ms隨膜厚增加而增加；經過500真空退火熱處理后，薄膜出現smcos的結晶物，矯頑力hc降低， mr ms減小，磁化機制由疇壁釘扎類模型轉為形核類模型。 -
The soft magnetic properties have become better in samples annealed at 400 c for 1 hour in a transverse magnetic field of 15 oe at vacuum atmosphere
在真空條件下400加15oe磁場退火1小時后，樣品軟磁性能得到較大改善。 -
Vanadyl phthalocyanine ( vopc ) films prepared by vacuum deposition were annealed under magnetic field. uv - visible absorption results showed that the films annealed under magnetic field showed a q - band red - shift. x - ray diffraction study ( xpj ) ) indicated enhancement in diffraction intensity and shift of peak position
分析表明酞菁氧釩分子uv - vis吸收譜q帶峰值發生較大的紅移； xrd測試中衍射峰強度明顯增強，峰位變化，但峰寬變化不大；原子力顯微鏡（ afm ）分析發現晶粒大小無明顯變化。 -
In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %
按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
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