vacuum-deposited 中文意思是什麼

vacuum-deposited 解釋
真空沉積的
  • vacuum : n （pl vacuums vac ua ）1 真空；空處，空虛，空白。2 〈美口〉吸塵器（＝ vacuum cleaner）。vi vt 〈...
  • deposited : 被沉澱的
  1. This film is deposited on the surface of the glass by evaporating crystals, use of cryolite or magnesium fluoride, in a vacuum.

    塗敷薄膜時，通常是將玻璃置於真空之中，然後使冰晶石或氟化鎂晶體氣化，令其沉積于玻璃表面上。
  2. The film is deposited on the surface of the glass by evaporating crystals, usually of cryolite or magnesium fluoride, in a vacuum.

    塗敷薄膜時，通常是將玻璃置於真空之中，然後使冰晶石或氧化鎂晶體氣化，令其沉積于玻璃表面上。
  3. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  4. X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming

    研究結果表明，由於雜質fe的摻入降低了smco薄膜的磁性能；制備態smco薄膜為非晶態結構，矯頑力hc隨著薄膜厚度的增加而減小，剩磁比mr ms隨膜厚增加而增加；經過500真空退火熱處理后，薄膜出現smcos的結晶物，矯頑力hc降低， mr ms減小，磁化機制由疇壁釘扎類模型轉為形核類模型。
  5. Brass wires are winded between two metallic electrodes located in a vacuum chamber, where 2 m thickness films are deposited onto the substrate glass after explosive wires discharging

    實驗結果表明:玻璃基體表面被鍍上一層緻密的銅膜，具有與金屬類似的導電性。在掃描電鏡下觀察，膜厚約為2 m 。
  6. Test method for vacuum - deposited metal thickness - electric resistance method

    真空金屬鍍層厚度測試方法電阻法
  7. The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ), pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ), with diameter of 2cm. in a vacuum chamber, boron nitride ( bn ) film was deposited on the single - crystal silicon substrate

    利用高能脈沖激光（波長= 532nm ，頻率= 1赫茲，脈寬= 10納秒）在常溫下轟擊燒結的高純六方氮化硼（ h - bn ）靶，在真空反應室中將bn薄膜沉積在單晶硅基底上。
  8. This paper describes the theory of oxide vacuum coating and the form mechanism of film. it is discussed the technique that nonmetal is conated on polymer. the barrier performance of this new material that is produce by using different deposited method and raw materials is compared

    論述了非金屬真空鍍膜的蒸發理論和鍍層的形成機理，討論了非金屬鍍膜的技術方法與工藝，比較了不同蒸鍍原料與方法對材料阻隔性能的影響與效果。
  9. Study of crystalline polyaniline thin films deposited by vacuum evaporation

    真空蒸發沉積聚苯胺晶態薄膜的研究
  10. Cdte films deposited by close space sublimation have better appearance and larger grain than the films deposited by rf - sputtering and vacuum thermal evaporation

    近距離升華法制備的cdte薄膜與射頻濺射和真空蒸發相比，具有其獨有的特性。
  11. Vacuum deposited layer

    真空沉積層
  12. Vacuum deposited circuit

    真空沉積電路
  13. Vacuum deposited film

    真空沉積膜
  14. Structure and properties of ta - c films deposited by filtered cathodic vacuum arc technology as a function of substrate bias

    襯底偏壓對四面體非晶碳膜結構和性能的影響
  15. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  16. The polytetrafluoroethylene ( ptfe ) is used as targets. fluorocarbon films are deposited onto polyimide ( pi ) and polypropyrene ( pp ) substrates, respectively. various discharge conditions ( voltage, vacuum and treating time ) are discussed

    本文利用射頻磁控濺射的方法，以聚四氟乙烯（ ptfe ）為靶材，在聚酰亞胺（ pi ）和聚丙烯（ pp ）基底上沉積氟碳膜，對不同工藝條件（放電功率、真空度、處理時間）進行了探討。
  17. Design of articles that are to be coated - recommendations for low pressure and vacuum deposited coatings

    層覆物品設計.第9部分:低壓和真空淀積覆層推薦標準
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