wafer paper 中文意思是什麼

wafer paper 解釋
薄餅襯紙
  • wafer : n 1 薄脆餅；薄餅一樣的東西；【物、無】圓片；薄片；晶片；【醫學】糯米紙〈包藥用的干糊片〉。2 （封...
  • paper : n 1 紙；裱墻紙。2 報紙，報。3 收據；債券；證券；票據；匯票；鈔票（＝paper money）。4 〈pl 〉身份...
  1. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  2. Our company is a professional enterprise of paper printing and silk screen printing, major in paper printing, such as tagged label, anti - counterfeiting materials, bar code label, instruction book, costume book, handbag, as well as silk printing, such as plastics, glass, aluminum, circuit wafer, laser label, lamp case and so on

    我司是一家集紙印刷、絲網印刷的多元化企業，主要經營紙印類：不幹膠標簽、防偽材料、流水條碼、說明書、畫冊、手挽袋；四色絲印類：塑膠、玻璃、鋁牌、電路板、雷射水洗標、轉貼標、燈箱畫、冰箱貼等一站式印刷業務。
  3. This paper describes briefly the measurement of equipment efficiency and equipment capacity and introduces mainly its applications in semiconductor wafer manufactory

    本文針對該問題，系統地介紹了半導體晶圓製造中設備效率和設備能力的衡量標準及其數據收集，以期達到提高設備利用率的目的。
  4. Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )

    通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。
  5. The principle advantages of vcsels over conventional edge - emitting lasers lie in ultralow threshold current, small far - field divergent angle, high modulation frequency, potential for wafer level testing and the ease for single longitudinal mode operation and two - dimension integration. as a result they show considerable promise for applications such as optical fiber communication, parallel optical interconnects, optical information processing and neural networks, etc. a direct coupling theoretical model in quasi - three - dimension for the gain - wave guide vertical - cavity surface - emitting lasers has been created in this paper

    它與傳統的邊發射激光器相比具有更優越的特性，例如，具有極低的閾值、較小的遠場發散角、調制頻率高、易實現單縱模工作和二維集成，無須解理封裝即可進行在片測試等，所以，它被廣泛應用於光纖通訊、并行光互聯、光信息處理、光神經網路等領域。
  6. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  7. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  8. This paper mainly accomplished the following research : summarize the classify and application fields of four - probe testing technology ; take the square four - probe testing technology study by using the advantage of rymaszewski method in auto - eliminating the portrait wandering influence to induct ry method to square - probe testing method ; deeply study the influence of probe wandering to progressed ry method testing result ; complete the design of testing panel and testing circuit, realize the auto - testing of mono crystal wafer ; discuss the image enhancement and threshold selection problem in image identify, and finally accomplish the identify of probe pinpoint. the main new view points of the research : 1. it is the first time for applying image manipulation and analysis technique to the sheet resistance measurement, and achieving the auto - location function of the probe

    為此，本文開展了以下研究工作：綜述了四探針技術的分類以及應用范圍；對方形四探針測試技術進行了研究，利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用於方形探針測試法中，並對探針游移對改進rymaszewski法測試結果的影響進行了深入探討，提出了用圖像識別技術監測測試進行的方法；完成了測試系統的測試平臺以及測試電路的設計，研製出具有圖像識別功能的斜置式方形探針分析儀一臺，實現了矽片電阻率測試的自動化；對圖像識別過程中涉及到的圖像增強和閾值選擇問題進行了論述，最終實現了對探針針尖的圖像識別以及探針測試結構的自動調整，保證了方形探針測試儀的測試精度。
  9. This paper surveys robotic wafer handling system for integrate circuit manufacturing, and reviews the operating principle and research results of the main components of the system, i. e., wafer robot and prealigner

    摘要介紹了面向集成電路製造業的矽片機器人傳輸系統，綜述了其主要組成部分矽片機器人和預對準裝置的工作原理及國內外研究成果。
  10. Abstract : this paper introduces the technology of solid membrane transfer by wafer bonding and its applications

    文摘:闡述了利用鍵合方法轉移薄膜材料的技術及其應用。
  11. At present, the problem in testing sheet resistance for micro - areas is that probes must be set up at the suitable locations by handwork. in order to know the wafer ' s impurity distributing, we need test many times, so will waste a lot of time. if the wafer ' s diameter would be 300mm, this problem will be more serious. in this paper, image analysis is introduced, through pre - processing and edge picking - up, the probe tips are recognized. then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors. thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity

    這樣，完成200mm （ 8時）圓片雜質的擴散分佈需要對許多圖形進行測試，需要花費很長的時間，當測試300mm矽片時問題就更為突出。本文將圖象與視覺測量系統引入四探針測試系統中，對採集到的原始探針圖像進行預處理、邊緣提取等操作，以便實現探針針尖的識別，然後由電機控制實現探針的自動定位。這樣測試系統可以自動獲得全片的薄層電阻分佈，為超大規模集成電路檢測雜質分佈和擴散的均勻性提供信息。
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