wafer中文意思是什麼

wafer 的中文意思

wafer 例句

1. Single- wafer processes use higher pressures than the batch processes.
   單片工藝比多片工藝要用較高的壓力。
2. September 8, 2007, intel broke ground on its first 300mm wafer fabrication facility in asia
   2007年9月8日，英特爾在亞洲的第一座300毫米晶圓工廠大連晶元廠破土奠基。
3. In the wafer - cycle fitting algorithm, comparing with circumgyration radius approach, track fitting approach, and least square circle fitting approach. in the wafer pre - alignment system, the wafer square fitting algorithm - least square circle fitting approach, based on optical linear ccd sensor, as well as the theoretical error analyze of this algorithm
   在晶圓檢測演算法方面，比較回轉半徑法、軌跡擬合法以及最小二乘圓法，選擇光學線陣ccd的晶圓圓心最小二乘圓法作為系統晶圓圓心的檢測方法。
4. Specification for establishing a wafer coordinate system
   確定晶片坐標系規范
5. Corrosive effect of slurry inhibitor on copper wafer
   拋光液中緩蝕劑對銅矽片的影響
6. Wafer scriber dicer
   薄片的劃
7. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper
   本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
8. Whole hazelnut center surrounded by light and tender cream, crispy wafer , and coconut coating
   以整粒榛仁為心，外裹輕滑細膩的奶油、酥脆的威化和椰味外皮。
9. Hot plate with silicon wafer lowered to heating position
   加熱板與矽晶圓降低至加熱位置。
10. Hot plate with silicon wafer in initial configuration ( before heating )
    加熱板與矽晶圓在啟始狀態（加熱前） 。
11. The final ic is made by sequentially transferring the features from each mask, level by level, to the surface of the silicon wafer .
    按照順序從每一塊掩膜版上將圖形一層一層地轉移到矽片的表面，就制得了成品集成電路。
12. Wafer stepper lithography
    薄片的步進式光刻
13. Research on error automatic revised method of lsi wafer honing process
    集成電路基板研磨表面誤差自動修正技術
14. A beam of light ( typically ultraviolet light from a mercury arc lamp ) shines through the chromium mask, then passes through a lens that focuses the image onto a photosensitive coating of organic polymer ( called the photoresist ) on the surface of a silicon wafer
    一束光（通常是汞弧燈發出的紫外光）先穿透鉻光罩，然後通過透鏡把影像聚焦在晶圓表面的有機高分子感光塗料（稱為光阻劑） 。
15. A novel package for microelectronics : wafer level package
    圓片級封裝
16. Nand wafer and micro - controller procurement power : steady and cost effective supply of raw materials
    邏輯晶元和微處理器采購能力：穩定高效的原材料供應。
17. With huge oversupply in some industries, and big rises in rawmaterials costs, many manufacturers are having to endure wafer - thin margins
    一些行業里貨幣供應過多，原材料價格上漲，許多生產商不得不接受微薄的利潤率。
18. With huge oversupply in some industries, and big rises in raw - materials costs, many manufacturers are having to endure wafer - thin margins
    隨著一些工業領域的生產大量過剩，以及原材料成本的驟增，很多生產商都不得不忍受邊際收益的大縮水。
19. One of the most important advancements recently for electroglas has been in gaining greater control over the z direction of the wafer prober, which affects the accuracy and impact force of touchdowns on wafer s and enables their customers to effectively test even the most recent types of delicate devices
    其中伊智公司最近最重要的一個進步就是：實現了對于晶圓探針臺z方向的更大程度的控制，這直接影響到探針接觸晶圓的精確性和沖擊力，為客戶提供了高效率的測試；即使是最新型的精細器件。
20. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate
    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。

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