均質晶體 的英文怎麼說

中文拼音 [jūnzhíjīngtǐ]
均質晶體 英文
homogeneous crystal
  • 均 : Ⅰ形容詞（均勻） equal; even Ⅱ副詞（都; 全） without exception; all
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. The process of growing ktp crystal of high quality and low conductivity was studied. it was pointed out that many factors such as the uniformity of temperature distribution in the furnace, the accuracy of temperature control, the quality and direction of seed crystal and the speed of temperature drop all had an important influence on the quality of ktp crystal

    研究了生長高光學質量、低電導率ktp晶體的工藝過程，指出晶體生長爐溫度場的均勻性、控溫精度、籽晶的質量和定向以及降溫速度的快慢對晶體的光學質量有著重要的影響。
  2. The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes

    本文就是在此背景下，利用金屬波導和單軸晶體的一些特性，結合麥克斯韋方程組和波導的邊界條件，從三種不同的情況研究了光在對稱平面單軸晶體金屬波導（波導層是單軸晶體，兩個波導界面均為金屬）內的傳輸特性，其主要貢獻為，首次解析地得到了這種波導結構下模式場的精確解，並發現了一些有用的特性： （ 1 ）模式場的性質因單軸晶體的性質不同而異； （ 2 ）當單軸晶體光軸位於波導界面法方向與傳輸方向構成的平面內時，波導中傳輸te波和tm波，只不過其主模因單軸晶體的性質不同而異，當波導層介質為負單軸晶體時，波導主模是te波主模，而波導層介質為正單軸晶體時波導主模是tm波主模。 （ 3 ）當單軸晶體光軸位於波導面內時，對于正單軸晶體，波導的主模是橫電波te _ 0模，任何頻率的光波均可激勵該模式；當光波波長滿足一定條件時，波導內傳輸單模，否則，將激勵起高階模式，高階模即匪te波，也匪tm波，而是兩者耦合而成的混合模。
  3. Increasing the cooling velocity and additions of nb and zr can refine the a - fe dendrites in as - cast alloys, decrease the amount of a - fe phase after homogenization treatment. as a result, the magnetic. properties were improved

    提高鑄錠的凝固速度及添加nb和zr可以促進鑄態合金內- fe相的晶粒細化及均勻分佈，減少均勻后殘留的- fe相，提高均勻化的效率和質量，從而提高磁體的矯頑力。
  4. Finally, the optical quality of ( nd3 +, yb3 + ) : yp0. 1v0. 9o4 crystals including the optical uniformity, the optical damage threshold and the laser performance was tested and identified

    並對晶體的光學質量進行品質鑒定，測試了其光學均勻性、光損傷閾值和激光性能。
  5. It ' s well - known that nucleation consisted of homogeneous nucleation and heterogeneous nucleation. the organic matrix used as the template to induce inorganic crystal growth and simulate the biomineralization is actually to promote heterogeneous nucleation and inhabit homogeneous nucleation. urinary stone is a kind of product of unusual biomineralization

    眾所周知，結晶過程中的成核有均相成核和非均相成核兩種可能，利用有機基質做模板，誘導無機晶體生長，模擬生物體內的礦化過程實際是促進非均相成核而抑制均相成核。
  6. This edta route has several remarkable advantages in comparison with other method. because of the greater ability of edta anions to chelate metal cations, and forming very stable and soluble complexes, all of the starting materials are mixed at the molecular or atoms level in a solution, it is easy to control the composition and a high degree of homogeneity is achievable

    傳統的合成方法是高溫固相反應，由於灼燒溫度高、灼燒時間長，形成硬團聚體，產物粒徑較大，一般為m級，需進行球磨粉碎以減少其粒徑，很難制得均相、均一粒度分佈的氧化物粉體，在研磨過程中容易引入雜質且晶形破壞使得發光亮度減小。
  7. The tests of e - o applications by our flux ktp has been realized, the results showed : optical waveguides fabricated by using an ion - exchange process, which have an exchange - ion concentration depth profile and refractive - index profile, is close to a complementary error - function distribution, optical homogeneity and device thermal stability is much better. amplitude modulation switch formed by our flux ktp has the contrast ratio of 150 : 1 and insert loss is 2. 5 % at 1064 nm. high quality optical pulse with 1 ns width was cut successfully by using an e - o modulator from a laser pulse with 50 ns width, this modulator had run for three years, and the crystal did n ' t blackened, it showed our low conductivity flux ktp can endure high modulation voltage for a very long time

    Ktp晶體的電光應用試驗表明：用離子交換法製作的電光波導，其離子交換濃度、折射率變化符合餘弦誤差函數，光學均勻性以及器件的溫度穩定性較好；製作的強度調制電光開關，消光比為150 ： 1 ，對1064nm激光的插入損耗為2 . 5 ；製作的電光調制器用於激光脈沖整形試驗，從脈沖寬度50ns的激光脈沖削出脈寬1ns的高質量光脈沖，該電光開關經過長達三年多的使用，沒有出現晶體變黑現象，說明本實驗的低電導率ktp晶體能夠耐受長時間的調制電壓。
  8. Abstract : the crystal structures obtained by static solidification and vibration solidification were compared. it was showed that, in the case of vibration solidification, the orientation growth of the columnar crystal was not obvious, the equiaxial crystal appeared more early. the grains of both types of crystals were quite fine, hardness in the full section was relatively high, and the hardness distribution was uniform. in the former case, the solute segregation in dendritical austenite more severe, and there were lumps of distortion inclusion

    文摘:對球鐵金屬型靜凝固與振動凝固的結晶組織對比表明：後者柱狀晶方向性生長較弱，等軸晶出現較早，且兩者的晶粒均較細，全斷面硬度較高且分佈均勻；前者枝晶奧氏體內溶質偏析大，有畸變夾雜團塊。
  9. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  10. Under the condition that the variance of temperature in the furnace was lower than 2. 5oc, the accuracy of temperature control was higher than 0. 2oc and the speed of temperature drop was 0. 2oc ~ 2oc, we grew doped - ktp crystals without obvious defects by immerged - seeded solution method

    在晶體生長爐溫場均勻性高於2 . 5oc 、控溫精度高於0 . 2oc 、降溫速度為0 . 2oc ~ 2oc的條件下，採用浸沒籽晶緩慢降溫法生長出宏觀無明顯缺陷的摻質ktp晶體。
  11. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  12. The analysis of microstructure of samples showed that the grain of tio2 were very small under 700, the distance of grain became small with temperature increasing, the rate and size of pore was decreasing. the relative density of sample at 900 was 97 % and the grain size of sintered body was about 200nm. when the temperature exceeded 1100, the grain size of body grew up several times ( > 2 m )

    Tio _ 2燒結體sem顯微形貌分析表明：低溫（ 700 ）時坯體內顆粒無明顯長大，燒結體緻密度不高（ 80 ）晶粒間距隨溫度升高而變小，氣孔率也隨之降低，氣孔尺寸變小；當溫度超過900時，晶粒間連接緊密，燒結體內出現大量絮狀物質，緻密度大幅度提高，達97以上，小氣孔已聚集成大孔洞且分佈均勻，晶粒長大不明顯（ 200nm左右） ；當溫度超過1100時，燒結體緻密度有所提高，但晶粒尺寸出現異常長大，長大了十幾倍（達2 m以上） 。
  13. The dislocation - free, low defects densities crystal are acquired, in which the impurities concentration is decreased, their distribution are uniform, and the gaas crystal has high uniform and purity characteristics

    利用m - lec法可以消除單晶中的位錯，降低缺陷密度，降低單晶中的雜質含量，並能使雜質在晶體中的分佈均勻，得到晶體均勻性、純凈度都高的gaas單晶。
  14. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  15. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  16. The resulted films were densely packed uniform amorphous films with substantial overlap between adjacent si02 layers, and can serve the function as antireflection coatings. colloidal ti02 particles of 3 ~ 4nm in diameter were prepared using tetra - h - butyl titauate as precursor, and composite multilayer films of pss / tio2 were electrostatically self - assembled

    二氧化硅膠體與聚合物pdda的自組裝多層復合薄膜為均勻、緻密的非晶態膜，復合薄膜內存在層間穿插的現象，薄膜表現出均質單層光學塗層的特性並具有增透作用。
  17. In the present thesis, we have considered a 2d photonic crystal of square lattice formed by two materials of dielectric constants. we consider the structure to be formed by a large number of small rectangle or square pixels of uniform size

    本文提出不管哪種結構均可看成是由很多個同樣大小的小矩形或正方介質像素組成的，對這種二維像素型光子晶體結構，對傳統平面波展開法可經修正使之收斂速度大大提高。
  18. Zinc oxide ( zno ) is a wide band gap ( 3. 4ev ) semiconductor with the hexagonal crystal structure ( wurtzite type ). zno thin films with the c - axis orientation perpendicular to the substrate show excellent piezo - electrical properties and are widely used in piezo - electrical filed. and the dense anjd uniform surface of the films is required when zno thin films are used as integrated functional films

    Zno屬於六方晶系6mm點群，晶體在c軸垂直面上的電性和彈性都是對稱的，因而c軸擇優取向的多晶薄膜能夠具有單晶那樣的壓電性和光電性質，而具有平整均勻的表面形貌則是zno薄膜作為一種集成功能薄膜應用性能的保證。
  19. A homogenous solid formed by a repeating, three - dimensional pattern of atoms, ions, or molecules and having fixed distances between constituent parts

    晶體一種由原子、離子或分子作重復和立體型排列而形成的均質固體，在組成部分之間有固定的距離
  20. This speck disrupts the otherwise uniform index of refraction, creating a cloudy spot in a person ' s field of vision

    這種小顆粒會破壞水晶體原本均質的折射率，在視野中製造出模糊的點。
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