掩模光刻 的英文怎麼說

中文拼音 [yǎnmóguāngkè]
掩模光刻 英文
mask lithography
  • 掩 : 動詞1 （遮蓋; 掩蔽） cover; hide 2 （關; 合） shut; close 3 [方言] （被卡住） get squeezed [pinch...
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  1. Lin h, li l and zeng l., " in - situ end - point detection during ion - beam etching of multilayer dielectric gratings ", chin. opt. lett., 3 ( 2 ), 63 ( 2005 )

    林華， "介質膜光柵:光刻膠掩模占寬比和離子束刻蝕槽深的監控" ，博士論文，導師:李立峰（ 2006 ）
  2. The prospect for the maskless lithography technology

    無掩模光刻技術的前景
  3. The beam division method in maskless laser interference photolithography can be divided into wave - front division and amplitude division

    摘要無掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。
  4. Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool, reticule, resist exposure, development and etching, they are beneficial to develop a yield - driven layout design tool, the engineers could use it to automate the tasks of advanced mask design, verification and inspection in deep sub - micron semiconductor manufacturing

    建立準確描述由於掩模製造工藝、光刻膠曝光、顯影、蝕刻所引起的光學鄰近效應和畸變所導致的關鍵尺寸變化的光刻工藝模型，有助於開發由成品率驅動的版圖設計工具，自動地實現深亞微米下半導體製造中先進的掩模設計、驗證和檢查等任務。
  5. The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated

    對設計好的集成波導器件，本論文設計並試驗了器件的製作的全部工藝，包括波導薄膜的沉積，掩模的設計製作，光刻，濺射金屬薄膜，剝離法製作金屬掩模，干法深刻蝕，矽片切割，端面磨拋，波導對準和性能測試。
  6. The theoretical research, computer simulation and experimental results analysis show that maskless laser interferometric lithography and holographic lithography have the characteristics of large field of view, high resolution, distortionless, relatively simple system structure, low costs and convenient realization way. they have a broad application prospect

    激光干涉光刻技術研究四川大學博士學位論文理論研究、計算模擬和實驗結果分析表明，無掩模激光干涉光刻和全息光刻具有大視場、高解析度、無畸變、系統相對簡單、成本較低，實現方便等特點，具有廣闊的應用前景。
  7. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  8. Kohler illumination was used in proximity lithography, and a fly ' s eye lens was adopted to form multi - point source in order to uniform the light intensity on the mask plane

    摘要接近式光刻中一般採用柯勒照明系統，並採用蠅眼透鏡形成多點光源均勻掩模面的光場分佈。
  9. The principle, theory, realizing methods for holographic lithography as well as the pattern transfer mechanism among the traditional photomask - hologram mask - resist have been deeply investigated. an experimental system with total inner reflection wavefront conjugation holographic lithography using right angle prism and refractive index matching liquid is designed and built, and the experimental research is carried out

    對全息光刻的原理、理論、實現方法及傳統光掩模?全息掩模?抗蝕劑圖形傳遞機理進行了深入的研究，設計和建立了採用直角棱鏡和折射率匹配液的全內反射波前共軛全息光刻實驗系統，進行了實驗研究。
  10. Lithography, as used in the manufacture of ics, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.

    光刻技術應用到集成電路製造中，就是將掩模版的幾何圖形轉移到矽片表面的工藝過程。
  11. Lin h, li l and zeng l., " in - situ monitoring during ion - beam etching of multilayer dielectric gratings : simulation and experiment ", holography, diffractive optics, and applications ii, spie, 5636, 143 ( 2004 )

    林華，李立峰，曾理江， "利用導波耦合角度實時控制光刻膠光柵掩模的占寬比" ，光學學報， 26 ， 767 ? 772 （ 2006 ）
  12. An interferometric lithographic experimental system with maskless and multi - beam exposure is built. an experimental system with wavefront divided by a trapezoidal prism and with selectable diaphragms for kinds of multi - beam, multiple - exposure interferometric lithography research is proposed. the experimental study on interferometric lithography is carried out

    建立了無掩模多光束多曝光干涉光刻實驗系統，提出了一種採用梯形棱鏡進行波前分割和利用可選擇光闌進行多種多光束多曝光干涉光刻研究的實驗系統，進行了干涉光刻實驗研究，對模擬和實驗結果進行了分析。
  13. Before more advanced lithography tool is produced, in order to use current tools to manufacture vdsm ic, reticle correction methods such as perturbing the shape ( via optical proximity correction ( opc ) ) or the phase ( via phase - shifting masks ( psm ) ) of transmitting aperture in the reticle are proposed by the industry

    在波長更小的光刻系統出現前，為了能利用現有設備解決集成電路的可製造性問題，工業界提出了對掩模作預失真（光學鄰近校正）和在掩模上加相位轉移模（移相掩模）等的掩模校正方法。
  14. However, in current design flow, designers do not consider whether designs are friendly to opc before they are sent to foundries. in fact, a lot of features in such designs can not be corrected enough because of many factors such as the constraints of environments. so even though such designs are corrected, many lithographic errors still exist

    然而，由於在當前的集成電路設計流中，在設計出的版圖送到製造廠商前，電路的設計者並沒有考慮版圖對光學鄰近校正和交替移相掩模的友好性問題，這使得版圖中的一些圖形由於周圍條件的限制，如無法充分進行光學鄰近校正，無法進行交替移相掩模的處理等，從而使得版圖設計即使進行了校正處理，還存在大量光刻故障的可能性。
  15. Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o. lum - pattern. in recent years, several key technologies have been developed rapidly such as laser producing plasma source, extreme ultraviolet multilayer, optical fabrication and metrology, projection - camara alignment, low - defect mask and control technology of stage

    極紫外投影光刻（ extremeultravioletlithography簡稱euvl ）最有可能成為下一世紀生產線寬小於0 . 1 m集成電路的技術，近年來在激光等離子體光源、極紫外多層膜、光學加工和檢測、光學精密裝調、低缺陷掩模、光刻膠技術以及高穩定工作臺系統控制等關鍵技術方面得到了飛速發展。
  16. For the coordination of the contradictory, the wavefront technique has been regarded as an effective method to improve the image quality in photolithography by optimizing the image of the mask. it includes : pupil filtering, phase shift mask, off - axis illumination, optical proximity correction, and so on

    為了協調這種矛盾，利用波前工程來改善光刻圖形的質量以提高光刻解析度，已廣泛地應用於光學光刻中，如：瞳孔濾波、相移掩模、離軸照明、光學鄰近效應校正等。
  17. The methods and systems ( including amplitude division double - beam interference system, three - beam interference system, liquid immersion type deep uv interference system and full automatic interference photolithographic system ) for amplitude division maskless laser interference photolithography are studied and compared

    研究和比較了振幅分割無掩模激光干涉光刻方法和系統，包括振幅分割雙光束干涉系統、三光束干涉系統、液浸式深紫外干涉系統及全自動干涉光刻系統。
  18. Lithograghy and its relative techniques play a very important role in mems fabrication processes, spin coating and baking are an indispensable working procedure before and after the lithography process. oven and hotplate are often employed in order to enhance adhesion between the film and the substrate, stabilize sensitivity of film and improve the abrasion resistance when the film touches a mask in contact exposure

    均膠和烘乾是光刻工藝中不可缺少的一道工序，為增加膠層與矽片表面粘附能力，提高在接觸式曝光中膠層與掩模版接觸時的耐磨性能及穩定膠層的感光靈敏度，通常採用烘箱或熱板等加熱設備對光刻膠進行乾燥。
  19. Simulation and experiments show that for point array or hole array patterns with the same sizes maskless interference photolithography is much simple than the traditional photolithography

    模擬和實驗結果表明，對點陣或孔陣圖形，在同樣的圖形尺度下，無掩模干涉光刻比傳統光刻簡單得多。
  20. The basic principle, theory, main types and realizing methods of maskless laser interferometric lithographic technology used for generation of high resolution, deep sub - micron and nanometer patterns in large field of view are deeply investigated

    深入研究了無掩模激光干涉光刻技術用於高分辨、大視場、深亞微米和納米圖形生成的基本原理、理論、主要類型和實現方法。
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