摻氮 的英文怎麼說

中文拼音 [chāndàn]
摻氮 英文
nitrating
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  1. A novel materials design procedure based on the co - doping of metal nanoparticle and azo dye compound ( mnpadc ) is developed to improve the properties of functional molecules

    為改善功能分子的特性，提出一種基於金屬納米粒子偶氮染料復合物共摻雜超分子結構功能材料的設計新方法。
  2. However, it is not easy to incorporate large n concentration in gap due to the large differences in lattice structure ( gan belongs to wurtzite structure while gap zinc blende structure ) and in lattice constant ( ~ 20 % ) between gan and gap, which will lead to an extremely large miscibility gap

    然而要在gap中實現高濃度的摻氮並不容易。這主要是由於gap和gan之間較大的物理特性的差異，特別是晶格結構和晶格常數的差異，使得gap和gan存在較大的可混溶性間隙，從而難以生長高質量的高摻氮的gap材料。
  3. Test methods for nitrogen content of nitrogen - doped getter

    摻氮吸氣劑含氮量測試方法
  4. The pertinent research work has been carried out as follows : the transparent nano - tio2 films on soda - lime glass substrates were obtained by sol - gel process. the precursor of nano - tio2 film was ti ( oc4h9 ) 4 and the menstruum was c2h5oh. the preparation conditions which were effecting the nano - tio2 quality were researched

    本文主要就納米tio _ 2薄膜的制備、探索用ecr氮等離子納米tio _ 2的摻雜改性等開展了如下的工作：本文採用溶膠?凝膠法，以鈦酸丁醋做前驅體、無水乙醇做溶劑，水解制備溶膠，然後通過提拉法制備納米tio _ 2薄膜。
  5. It seems the ncz silicon has a higher bdt temperature compared with cz silicon ' s. it is suggested that the elastic effects and the electronic effects of nitrogen doped in silicon made the bdt temperature higher. the observation of fracture surface showed that it was curves at high temperature in brittle fracture, but smooth planes at room temperature

    當溫度升高達到硅材料的脆塑轉變時，材料的斷裂強度有個很大的提高，但是首次發現含氮硅單晶卻不明顯，而且摻氮的硅單晶脆塑轉變溫度比普通單晶高，可能是氮的摻入改變了硅材料的內部晶體結構及電子結構。
  6. Standard specification for steel bars, alloys, for nitriding

    摻氮用合金鋼棒
  7. The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting

    6文章還對立方氨化硼薄膜的成核和生長機理，氮化硼薄膜的n型摻雜機制和bn型）侶i …型）異質結的電流輸運機制進行了探討。
  8. Nevertheless, use of soil incorporation for urea and anhydrous ammonia to reduce volatilization, the practice of delaying nitrogen fertilizer application in imperfectly drained soils to minimize denitrification and leaching, and patience in the case of immobilization will tend to resolve all these problems

    但是，採用把尿素和液氨和土壤摻混施用以減少氨揮發，在排水不良的土壤上採取延遲施氮期的辦法以減少反硝化及淋失，以及對于氮固定問題採取耐心克制的態度，這些問題就都能得到解決。
  9. Test method for barium film distribution of nitrogen - doped getter

    摻氮吸氣劑鋇膜分佈測試方法
  10. The advance of research on oxygen precipitates in ncz silicon

    摻氮直拉單晶硅中氧沉澱的研究進展
  11. Test method for nitrogen - released and gas - absorbed dynamic curve of nitrogen - doped getter

    摻氮吸氣劑釋氮吸氣動態曲線測試方法
  12. We found that the cz silicon wafers preannealed by rtp in nitrogen atmosphere are significantly characteristic of ncz silicon wafer, that is, the n - o complexes related stds are also generated in the cz wafer subjected to rtf in na and subsequent proper heat treatments

    研究發現，氮氣氛下高溫rtp處理的cz硅樣品在後續熱處理中表現出了摻氮硅的退火特性，進而證明了在氮氣氛下rtp處理中氮發生了內擴散。
  13. Preparation of semiconductor cubic boron nitride crystalline with silicon diffusion

    硅摻雜半導體立方氮化硼單晶的制備
  14. It is showed that after doping s the bn thin films of n - type conductivity are obtained

    研究表明，未摻雜的氮化硼薄膜電阻率為為1
  15. 2 for the first time, rf sputtering method and vapor doping method have been combined to prepare n type bn films. bn films doped with s are n type conductivity

    摻s后的氮化硼薄膜表現出n型導電，未摻雜的氮化硼薄膜的電阻率1 . 8 1011 cm ，摻雜后的氮化硼薄膜的電阻率為7 . 3 107 cm 。
  16. The afm scans has shown that the sample ' s external configuration has not been defaced. the uv - vis instrument test has shown that the absorb spectrum has been move 12nm - 18nm to the infrared. with different power and implanting time, the feasible conditions are under the four hundred watt and sixty minutes

    研究表明，注入時間和注入功率對納米tio _ 2的光吸收有較大影響，氮的注入量存在一個最佳濃度值，摻雜劑濃度太高或太低，均不利於提高納米tio _ 2的光吸收。
  17. Rainwater is not clean water, because adulterated air pollution content, still have the pollution of the ground and roofing, nitrogen of ion of yin and yang, heavy metal, ammonia often is contained to wait in collection rainwater, a lot of people fear such water passes simple processing, whether humanness is drinkable

    雨水並非純凈水，由於摻雜了大氣污染物，還有地面和屋面的污染，收集的雨水中往往含有陰陽離子、重金屬、氨氮等，很多人擔心這樣的水經過簡單的處理，能否為人飲用。
  18. To summarize, intense near uv, violent, blue, green, and red emitting can be obtained in si - based thin films through 0 and n doping

    綜上所述，通過氧、氮摻雜，在硅基薄膜中可獲得近紫外及紫、藍、綠和紅等波段的強熒光，熒光強度取決于制備工藝方法及工藝參數。
  19. As for the pl mechanism, except the red band, the rest are all originated from luminescence defects related to impurity, and the luminescence centers are affected by configuration of impurities, while the red emitting band may attribute to the quantum confinement effect of nano - si, but will also rely on its interface characteristic

    就發光機制而言，除紅光寬帶外，均起源於氧、氮摻雜引起的缺陷發光中心，發光中心受雜質組態影響，紅光寬帶可能聯繫到量子限制效應，同時還依賴于界面特性。
  20. This equipment adopts the titanium nitride metal mixing techs forming ion gold membrane with good abrasion resistance, therefore it fits for various top - grade decorating membrane

    該設備採用氮化鈦表面摻金技術，形成離子金膜層，耐磨性非常好，廣泛用於各種高檔裝飾膜層。
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