放射活性材料 的英文怎麼說

中文拼音 [fàngshèhuóxìngcáiliào]
放射活性材料 英文
active emitting material
  • 放 : releaseset freelet go
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 活 : Ⅰ動詞1 （生存; 有生命） live 2 [書面語]（救活） save （the life of a person）:活人無算 （of a goo...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 材 : 名詞1 （木料） timber 2 （泛指可以直接製成成品的東西; 材料） material 3 （供寫作或參考的資料） ma...
  • 料 : 名詞1 （材料; 原料） material; stuff 2 （喂牲口用的穀物） feed; fodder 3 （料器） glassware 4 （...
  • 放射 : radiate; emit; blas; radiation; emission; shooting; shedding; abjection; emanation; effluence
  • 活性 : [化學] activity; active; activated活性肥料 active fertilizer; 活性酵母 active dry yeast; 活性粘土...
  • 材料 : 1. （原料） material 2. （資料） data; material 3. （適于做某種事的人才） makings; stuff
  1. A series of experiments were conducted to research on electrode according to the principle of energy - storage materials, electroly tes, preparation techniques with the aids of the measure methods such as cyclic voltammetric measurements ( cv ), constant charge / discharge measurements, impedance spectrum, x - rays diffraction ( xrd ), transmission electronic microscope measurements ( tem ), and so on

    本文採用了循環伏安、恆電流充放電、交流阻抗、 x射線衍射、透射電子顯微鏡等實驗方法和測試手段對超大容量電容器的電極活性物質材料及電極製作工藝、電解質溶液的選取等問題展開了一系列研究。
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  3. Active emitting material

    放射活性材料
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