放射生物反應 的英文怎麼說

中文拼音 [fàngshèshēngwùfǎnyīng]
放射生物反應 英文
radiobiological response
  • 放 : releaseset freelet go
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 物 : 名詞1 （東西） thing; matter; object 2 （指自己以外的人或與己相對的環境） other people; the outsi...
  • 反 : Ⅰ名詞1 （方向相背） reverse side 2 （造反） rebellion 3 （指反革命、反動派） counterrevolutionari...
  • 應 : 應動詞1 （回答） answer; respond to; echo 2 （滿足要求） comply with; grant 3 （順應; 適應） suit...
  • 放射 : radiate; emit; blas; radiation; emission; shooting; shedding; abjection; emanation; effluence
  • 生物 : living things; living beings; organisms; bios （pl bioi bioses）; biont; thing; life生物材料 biol...
  1. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  2. Calvin, melvin ( 1911 - 97 ) american biochemist noted for his investigations of the dark reactions of photosynthesis ( using radioactive carbon ). he was awarded the 1951 nobel prize for chemistry

    卡爾文：美國生物化學家，他使用放射性的碳原子發現了在光合作用中的暗反應。 1951年他被授予諾貝爾化學獎。
  3. When the reactor cooled down, the longer - lived xenon precursors ( those that would later spawn xenon 132, 131 and 129, which we found in relative abundance ) were preferentially incorporated into growing grains of aluminum phosphate

    當反應堆冷卻下來，氙的放射性母核中生命期較長的，則被選擇性的包納進正在成長的磷酸鋁顆粒中，例如那些可以生成我們所見的大量氙132 、氙131 、氙129的物質。
  4. Rather they were the products of the decay of radioactive isotopes of iodine, which in turn were formed from radioactive tellurium and so forth, according to a well - known sequence of nuclear reactions that gives rise to stable xenon

    它們其實是碘同位素放射衰變的產物，而碘是由放射性碲產生，依此類推，經由人們所熟知的一系列核反應而產生穩定的氙。
  5. In the event of a serious nuclear accident, radiological materials may be released to the containment from the reactor system

    在發生嚴重核事故時，放射性物質可能從反應堆釋放到安全殼內。
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