晶核形成 的英文怎麼說
中文拼音 [jīnghéxíngchéng]
晶核形成
英文
formation of nuclei-
Bacteria or bile pigment may serve as a nidus for crystal formation.
細菌或膽色素可作為結晶形成的一個核心。The compositions of usual elements and rare earth elements and inclusions of corundum megacrysts related to alkali basalt in changle, shandong province, are analyzed. in the main parts of corundum megacrysts are a large number of fluid - melting inclusions, zircon, ta - columbite inclusions, and in the central crystal core are a large number of melting inclusions. the corundum megacrysts were formed in different periods and different physical chemistry conditions. the crystal core was formed in magma system, and the main parts were formed in inhomogeneously geochemical conditions in which magam and fluid phases coexisted
分析山東昌樂與堿性玄武巖有關的剛玉巨晶不同部位的常量元素、稀土元素及包裹體組成.剛玉巨晶的主體以大量流體?熔體包裹體、鋯石、鈮(鉭)鐵礦包裹體為主,而巨晶中的「晶核」部位則以大量的熔體包裹體為主,反映研究區的剛玉巨晶是在不同的階段形成的.剛玉「晶核」以及「銅皮剛玉」形成於熔體相為主的體系中,而主體剛玉則形成於熔體?流體過渡的急劇變化的不均一的地球化學環境中For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least
直流電沉積時,基質金屬的沉積連續進行,粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附,重新回到溶液中;採用周期換向脈沖時,反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附,同時,反向脈沖電流對基質金屬的溶解作用,也會促進粒子的脫附,因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加,三種鍍層的晶粒都明顯細化,說明al _ 2o _ 3的存在阻止了晶粒的長大,提高了電沉積過程中晶核的形成速率。Forming process analysis of equiaxed grain in weld nugget zone during friction - stir welding of aluminum alloy
鋁合金攪拌摩擦焊接頭焊核區等軸再結晶組織的形成機制The research of gibbs free energy, critical nucleus radius, nucleation rate of homogeneous nucleation " and heterogeneous nucleation shows that the main reason decreasing solution stability is heterogeneous nucleation
通過分析非均相成核與均相成核的臨界成核半徑、臨界晶核形成功、成核速率等,說明降低溶液穩定性的主要因素是非均相成核。The main mechanism of enhancing precipitation is that much ice nuclei turn into ices, and then snow ; graupel are formed more by microphysical processes. the melting of graupel makes precipitation more than that of unseeded clouds
主要的增雨機制是大量冰核活化成冰晶,冰晶通過增長和其他的微物理過程形成雪晶、霰,霰最後融化成降水使地面降水量增加。Through the analyzing the macro - structure to micro - structure, the author considers that retarding mechanism of citric acid is that citric acid and ca in the gypsum form the complexant ion, and hinder the crystallization center of dihydrate crystal bigger ; that of sodium tripolyphosphate is that it combined with ca, hinders the dissolve of hemihydrate. formation and growth of crystallization center ; that of bone glue is the glue - protection and chemical absorption action of active group, which also retards the formation and growth of crystallization center
通過宏觀到微觀的分析,筆者認為,檸檬酸的緩凝作用的原因主要在於檸檬酸與鈣形成絡合離子,影響了二水石膏晶體的晶核長大過程;多聚磷酸鈉與鈣形成某種復鹽,對于石膏晶體的溶解、成核和長大過程均有強烈的阻礙影響;骨膠則在於膠體對半水石膏的包裹和活性基團的化學吸附,使二水石膏晶體的成核和長大困難。The results show that the deposition of nickel on the substrate do not undergo upd process, but undergoes nucleation process. in the experimental conditions, the electrocrystallization of nickel follows the mechanism of three dimensional progressive nucleation and growth
結果表明,鎳在該基體上的沉積沒有經歷upd過程,鎳的電沉積經歷了晶核形成過程,在所研究的外加電位范圍內,其電結晶按連續成核和三維生長方式進行,外加電位對晶體生長具有顯著的影響。The microtube zno econtrollable growth on the glass substrate, which was previously deposited, of zno hollow spheres was researched. the results showed that zno hollow spheres acted as crystal nucleus of zno microtubes. by this method regular zno microtubes were synthesised. the growth of microtubes can be controlled by change the size of zno hollow spheres
結果發現zno中空球層對zno微米管的生長起到了晶核的作用,能夠在玻璃襯底上形成形貌規則的zno微米管;改變zno中空球的粒徑能夠改變所形成的zno微米管的尺寸,從而實現了對zno微米管的可控生長。This has an important meaning to the industrial manufacture. dsc, waxd and polarizing microscope with hot stage experiments were performed to describe what led the ssp rate acceleration of pet / mmt. it was shown that montmorillonite acted as a very good nucleating agent in pet crystallization process, which results in the lower crystallinity, more small microlites, and more surfaces of microlites
為研究pet mmt固相縮聚效率提高的原因,通過熱臺偏光顯微鏡、 dsc 、 x -射線衍射等手段對樣品的結晶進行觀察與分析研究,結果表明蒙脫土對pet的結晶有明顯的成核作用,使其晶核生成速率迅速提高,晶核數量明顯增多,從而使整個結晶過程的時間變短,同時形成了更多結構不完善的微晶體。( 4 ) preliminary investigation of the mechanism of electroless nickel on silicon showed that the catalysis of. silicon surface was acquired by the oxidation of silicon that prompts the deposition of nickel
( 4 )對單晶硅表面化學鍍鎳的機理進行了初步的探討,結果表明硅表面的化學鍍催化活性可能是由硅的氧化反應促使鎳離子沉積成鎳核所形成的。With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models
熱力學理論和方法已足以獲得準確的相平衡關系;然而即使對于簡單的二元物系的結晶過程,晶核形成和晶體生長動力學的研究仍面臨許多困難,通常採用經驗模型表述,而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵,因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。By means of sem, tem, laser scattered particle analyzer, etc., the formation mechanism of ultrafine sio2 particle was studied. it was found that at the initial stage, the sio2 particle consisted of some minicrystal, but after the initial stage the sio2 particle was formed by some soluble aggregated substance growing on the surface of the early particle
運用掃描電鏡、透射電鏡、激光粒度分析儀等檢測手段,探討了體系中超細二氧化硅顆粒的形成機理和過程,指出超細二氧化硅粒子前期是由體系中的微晶核組成,中後期則由體系中的可溶性縮合物在其表面生長而成。Bringing into play the communication market resources in hangzhou bay, the park devotes itself to the formation of a “ mobile valley ”, which means a unique zhejiang - flavored economic pattern : forming a complete telecommunication industry chain from software and operation development of key parts, such as ic chip, rf modules, base band, display, high capacity battery, to related components like cell phone housing, keypad, antenna, vibration motor, mould, pcb ( circuit board ), photoelectricity device, electronic device, connectors and system and software development, and operation service development
園區依託杭州灣通信市場資源,致力打造「移動谷」 ,創造中國浙江經濟特有的專業版塊模式:從集成電路晶元、 rf組件、基帶、顯示器、高能電池等核心器件到接手機外殼和按鍵、天線、振動馬達、模具、 pcb (電路板) 、光電器件、電子器件、連接件等相關組件及系統和軟體開發、運營服務開發,形成完整的通信產業鏈。Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed
文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭( plzst )晶體中出現的幾種缺陷:包裹體、開裂、位錯、枝晶,分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。To realize nolinear excitation controller, it must be improved that the disposal speed of nolinear excitation control " s signal. with analyzing and comparing all kinds of microcomputer excitation controller, a new microcomputer excitation control scheme is offered that is based on dsp controller while the cpld chip is utilized for realizing the function of pulse trigger. it is described in detail that the method of realizing controllable silicon digital logic by verilog hardware describe language and the designed digital pulse trigger " s veracity was validated by digital simulation
論文進一步針對非線性勵磁控制要求信號處理速度高、信息量大的特點,在對目前微機勵磁控制器分析基礎上,提出採用dsp控制器晶元作為核心處理器的微機勵磁控制器的解決方案,運用復雜可編程邏輯器件cpld晶元實現可控硅同步脈沖觸發單元,並簡要說明了verilog硬體描述語言和數字脈沖形成邏輯的方法,通過電路數字模擬對所設計的數字觸發單元進行了驗證。By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
實驗結果表明:隨著工作氣壓的減小,薄膜的晶粒尺寸有所減小;通過提高氫氣稀釋度,利用原子氫在成膜過程中起的刻蝕作用,可以穩定結晶相併去除雜相;選擇適當的熱絲距離能保證反應氣體充分分解,又使襯底具有較高的過冷度,是形成納米薄膜的重要條件;採用分步碳化法可以提高形核密度,有利於獲得高質量的納米- sic薄膜;襯底施加負偏壓可以明顯提高襯底表面的基團的活性,因負偏壓產生的離子轟擊還能造成高的表面缺陷密度,形成更多的形核位置。Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth
文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上,討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學,在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下,利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響Based on the cavitation in the melt generated by ultrasound, the mechanism by which the tiny insoluble particles were activated and became active solidification nuclei was discussed, and fine grains were obtained
基於超聲波對熔體產生的空化效應,討論了熔體中微粒超聲活化成為結晶核心,促進形核和細化晶粒的作用機制。The annealing also changes the grain morphology. the p grains from the amorphous layer are finer than in the other cases. silicide grains grow towards the substrate at high annealing temperature and finally shrink into isolated islands, thus deteriorating the silicide / si interface smoothness
由於非晶的形成,使得退火后晶粒要經重新形核和長大的過程,所以在同樣的退火條件下,與未形成非晶的樣品比,硅化物顆粒要小。分享友人