晶核長大 的英文怎麼說

中文拼音 [jīnghézhǎngdà]
晶核長大 英文
nuclei growth
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 核 : 核構詞成分。
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 長大 : grow; grow up; be brought up
  1. When ph value < 0. 5, faster deposition rate, faster growth rate of crystallizing nucleus, which causes bigger crystalline granularity and bad surface quality of the deposits such as crassitude or darkling

    Ph 0 . 5時，沉積速度過快，晶核成長速度快，晶粒粒度較大，鍍層表面粗糙、發黑，表面質量差。
  2. For electrodeposition by dc methods, the metals deposite uninterrupted and the particles were also embeded uninterrupted into the coatings ; for electrodeposition by pc method, the particles with biggish volume were desorbed from the coatings and returned to the electrolyte again owing to the presence of pulse interval ; for electrodeposition by prc method, the particles carried positive charges are much more easy to desorb from the coatings owing to the effecf of reverse pulse current combined with pulse interval, in addition, the reverse pulse current also could dissovle the metals, further accelerates the desorption of particles, thus the particles size embeded in the coatings by prc method is the least

    直流電沉積時，基質金屬的沉積連續進行，粒子在電極表面不間斷嵌入鍍層;單脈沖電沉積由於脈沖間歇的存在使得具有較大體積的粒子會脫附，重新回到溶液中;採用周期換向脈沖時，反向脈沖電流使表面荷正電的較大的粒子更易從電極表面脫附，同時，反向脈沖電流對基質金屬的溶解作用，也會促進粒子的脫附，因此鍍層中復合粒子尺寸最小。隨著鍍層中粒子復合量的增加，三種鍍層的晶粒都明顯細化，說明al _ 2o _ 3的存在阻止了晶粒的長大，提高了電沉積過程中晶核的形成速率。
  3. The main mechanism of enhancing precipitation is that much ice nuclei turn into ices, and then snow ; graupel are formed more by microphysical processes. the melting of graupel makes precipitation more than that of unseeded clouds

    主要的增雨機制是大量冰核活化成冰晶，冰晶通過增長和其他的微物理過程形成雪晶、霰，霰最後融化成降水使地面降水量增加。
  4. Through the analyzing the macro - structure to micro - structure, the author considers that retarding mechanism of citric acid is that citric acid and ca in the gypsum form the complexant ion, and hinder the crystallization center of dihydrate crystal bigger ; that of sodium tripolyphosphate is that it combined with ca, hinders the dissolve of hemihydrate. formation and growth of crystallization center ; that of bone glue is the glue - protection and chemical absorption action of active group, which also retards the formation and growth of crystallization center

    通過宏觀到微觀的分析，筆者認為，檸檬酸的緩凝作用的原因主要在於檸檬酸與鈣形成絡合離子，影響了二水石膏晶體的晶核長大過程；多聚磷酸鈉與鈣形成某種復鹽，對于石膏晶體的溶解、成核和長大過程均有強烈的阻礙影響；骨膠則在於膠體對半水石膏的包裹和活性基團的化學吸附，使二水石膏晶體的成核和長大困難。
  5. Quartz core zones : mineralisation occurs in enclaves of albitisation around the core of the pegmatite. tantalite crystals are large and randomly distributed

    石英核心帶：礦化作用存在於被納長石礦包圍的偉晶巖核心。鉭鐵礦呈現巨大而不規則分佈。
  6. The i - phases directly nucleate and grow from melt of cooling mg - zn - y ternary alloys

    Mg - zn - y三元合金熔體在室溫冷卻過程中，準晶相直接從液相形核、長大。
  7. Chondroitin sulfate a ( c4s ), as a kind of endogenetic urinary macromolecule, not only increased the supersaturation of cac2o4 in solution, but also inhibited the two - dimensional growth and aggregation of com crystals. the growth of calcium oxalate crystals was influenced by surface pressure beneath dppc monolayer film. there were some crystals which have the same appearance as com crystals obtained from pure water system when monolayer surface pressure was hold 1, 10 and 30 mn / m while those growth at 20 mn / m were perfect orderly induced by dppc monolayer

    生物大分子c _ 4s作為一種內源性的尿大分子，它不僅從熱力學上提高ca ~ （ 2 + ）在尿液中存在的濃度，使體系中cac _ 2o _ 4保持較高的相對過飽和度，降低草酸鈣結石成核的可能性；而且在晶體生長時，抑制com晶體晶面的二維生長和晶體聚集。
  8. The macroscopic defects such as twins, small - cracking, scattering particles, growth layer and cores are examined ; they are related with the temperature difference between gas and melt : the twins and small - cracking come out when the difference is large, the bubbles and scattering particles come out when that is small

    觀察到了孿晶、裂隙、雲層、生長層和核心等宏觀缺陷，晶體的這些宏觀缺陷與氣- -液界面溫差有較大關系：溫差大容易造成孿晶、裂隙等缺陷；溫差小容易造成氣泡、散射顆粒等缺陷。
  9. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  10. The precipitation sequence is. - supersaturated solid solution - stoicheometric " phase - growth. with the increase of the composition there is more characteristic of non - classical nucleation and growth, and the order parameter values of critical ordered nucleus decrease. the precipitation sequence is : supersaturated solid solution - nonstoicheometric ordered phase - stoicheometric " phase - growth

    隨濃度增加，大部分亞穩區合金沉澱非經典形核長大的特徵增強，有序相臨界晶核序參數分佈曲線降低，且分佈更加平緩，沉澱序列為：過飽和固溶體非化學計量比有序相化學計量比相長大，非化學計量比有序相併非熱力學意義上的亞穩相，研究工作明確了這一點。
  11. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  12. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  13. With plating time going on, the nano - polycrystal gathering grows in two dimensions, and the new nano - polycrystal layer appears simultaneously on the formerly formed nano - polycrystal surface. because the boundary and defect densities in quenched and tempered 45 steel is higher than those in annealed steel, the nano - polycrystal gatherings formed at its surface at the beginning of electro - deposition are more concentrated, and then their size is smaller. the microstructure of the ni - p alloy coating has closed relation with its phosphorus content with the increase of phosphorus content, the microstructure of coating turns from nano - crystalline to the amorphous

    隨著施鍍時間的延長，納米晶聚晶體在橫向二維生長的同時，在納米晶聚晶體的表面上也進行著三維方向的新的一層聚晶體的生長；在調質態45鋼表面，由於其具有比較高的晶界和缺陷密度，因此在沉積初期，納米晶聚晶體的成核密度也較大，從而在二維方向聚晶體的尺度較小，鍍層沉積初期表現為緻密細小的鱗片狀組織。
  14. Higher bath temperature and more deposition time, faster deposition rate, faster growth rate of crystallizing nucleus, which causes bigger crystalline granularity ; ph value and bath temperature are also key factors affecting the size of crystalline granulatrity

    鍍液溫度越高、時間越長，沉積速度越快，晶核成長的速度就越快，沉積晶粒的粒度也越大。鍍液ph值和sn ~ （ 2 + ）離子濃度也是影響晶粒粒度大小的關鍵因素。
  15. The amorphous phase is formed from the transformation of super - saturate solid solution, and there is no nuclear formation and grow process

    非晶相的形成是通過超過飽和固溶體的失穩轉變而成，不存在形核與核長大過程。
  16. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  17. The forming - nucleus drive power could form numerous little crystal nucleus under natural melting temperature. the formation of tic particles in the melt could be divided into two phases which was forming - nucleus and growth. the forming mechanism of tic was : melting ti first surrounded c, then ti melting in the alloy and c formed a complicated reaction mesosphere on the carbon surface

    根據熱力學及動力學分析，認為在碳顆粒界面處tic的形核率很高，形核驅動力足以在正常的熔煉溫度下形成眾多的小晶核；熔體中tic顆粒的合成可分為形核與長大兩個階段，其形核機制為：首先活性ti原子包圍c ，溶入合金中的ti與c在碳表面形成一復雜反應中間層，隨著反應進行， ti和c顆粒不斷減少，生成的tic不斷彌散分佈於熔體中；其長大過程伴隨著tic顆粒的相互堆砌、聚集和形態規則化。
  18. The annealing also changes the grain morphology. the p grains from the amorphous layer are finer than in the other cases. silicide grains grow towards the substrate at high annealing temperature and finally shrink into isolated islands, thus deteriorating the silicide / si interface smoothness

    由於非晶的形成，使得退火后晶粒要經重新形核和長大的過程，所以在同樣的退火條件下，與未形成非晶的樣品比，硅化物顆粒要小。
  19. Tb doped pt thin films with highly ( 100 ) orientation were prepared. rapid thermal annealing process was used to supply enough energy for the movement of the atoms. so perovskite phase began to form at ( 100 ) orientation which had the lowest surface energy

    研究發現， pt / tb薄膜系統為非均相成核，利用快速熱處理工藝可控制原子以高能量遷移，使鈣鈦礦結構晶體以表面能最低的（ 100 ）晶面在薄膜生長方向上結晶生長， pt / tb薄膜出現了（ 100 ）晶浙江大學碩士學位論文面的擇優取向。
  20. Maoming ubridge group yuexi fruit industry development company produces longan with thick pulp and small nucleus. the pulp is clarity and delicious

    茂名粵橋集團粵西果業開發有限公司出產的眼果型大色澤好，肉厚核小晶瑩透明甜脆可口，植株壽命長
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