晶粒增生 的英文怎麼說
中文拼音 [jīnglìzēngshēng]
晶粒增生
英文
metalgrowth-
The results from x - ray diffraction demonstrated that pp / mmtome was a fully intercalated nanocomposite, pp / mmtom and pp / ommt were partly intercalated nanocomposites, but the intercalation effect of pp / mmtom nanocomposite was better ; the crystallization characteristics of pure pp and pp / mmt nanocomposites were investigated by dsc, waxd and pom. the result of these testing showed that mmt nano - layers acted as nucleating agents for the crystallization of pp, the addition of mmt had effect on the crystallization process, leading the increasing of crystallization temperature crystallization rate and crystallinity, but also the dimension of spherulite reduced. but the formation of pp crystal did n ' t change, the formation of pp crystal in three pp / mmt nanocomposites and pure pp were a - form on the whole ; influences of three sorts of mmt on mechanical properties of pp / mmt nanocomposites were studied, as a result, the addition of mmt comprehensively improved mechanical properties of pp : notched impact strength, tensile strength and flexural properties were all increasing, but the extent of increasing were n ' t large
通過xrd分析比較這三種pp mmt納米復合材料微觀結構得到， pp mmt _ （ ome ）屬于完全插層， pp mmt _ （ om ）與pp ommt的插層程度相近，但是pp mmt _ （ om ）相對較好；通過對純pp和三種pp mmt納米復合材料的結晶性能研究發現，蒙脫土納米片層對pp結晶產生明顯的異相成核作用，結晶能力增強，使pp的結晶溫度和結晶速率提高，結晶度增加，球晶晶粒細化，但是沒有改變pp的結晶形態，三種pp mmt納米復合材料的結晶形態都屬于晶；通過對pp mmt納米復合材料的力學性能測試得知，蒙脫土的加入全面提高了pp的力學性能，缺口沖擊強度、拉伸強度和彎曲性能都有一定程度的提高，浙江{ _業大學碩十學位論文摘要但是提高幅度都不是很大，不過ommt 、 mmtom和mmtc ） me三種蒙脫土對pp力學性能有著不同的改性作用，其中pp / mmtom最好， pp月邊mto崛次之， pp / ommt最低，這種情況主要是由蒙脫土對pp結晶性能的影響和蒙脫土的納米改性作用造成的。The crystalline structure changes of pp induced by pan - milling were characterized by x - ray diffraction and raman spectroscopy. xrd analyses show that when pp was co - milled with uhmwpe, crystal transformation of pp occurred, its crystallinity and crystallite size decreased, whereas, only slight reduction of crystallinity and crystallite size were observed and no crystal transformation was found when pp was co - milled with wtr chips, and amorphization of pp was strongly enhanced by co - milling pp with iron
採用x -射線衍射研究了聚丙烯碾磨粉碎過程微觀結構變化， uhmwpe存在下pp發生晶型轉變、結晶度降低和晶粒尺寸減小；彈性材料wtr抑制pp塑性變形，碾磨導致分子堆積有序區域膨脹，晶面間距增大，結晶度下降；剛性材料金屬鐵與pp產生強烈摩擦，加快晶粒細化，晶格破裂導致非晶化。The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of
對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。Suitable polycrystalline znsxse1 - x film with zinc sulfide cubic structure and ( 111 ) preferred orientation that provided a good matching with the requirements of lclv were deposited on ito coated glass by mbe method. room temperature photo - responsivity measurements performed on these thin films show that
相比于用zns和se為生長源制備的znsxsel x薄膜，採用zns和znse化合物為源材料的實驗方法制備出的薄膜性能更優良，其晶粒尺寸普遍增大，柱狀晶形更完整。The results indicated that, the fabrication process of ultra - fine grain material is mainly determined by the stress, rotate speed and the flux of cooling water. the grain refining and the hardening effect are mostly affected by the rotate speed and the flux of cooling water. compared with commercial ly12, the invalidate strength and the prolongation rate of the ultra - fine grain material are properly improved in the measurement of compression property ; and the abrupt change of the dilatability of the ultra - fine grain material at 500c is found ; also the phenomena of which the grain size of these microstructures is stable when annealed under 300c is observed
研究表明，採用本文提出的摩擦壓扭強變形區轉移法可以得到棒狀的超細晶材料，軸向壓力、扭轉速度和溫度是採用該方法制備超細晶材料的主控參數；試件的旋轉轉速和冷卻速度對變形區晶粒細化和硬化效果影響顯著；超細晶ly12的壓縮性能與淬火+自然時效狀態的ly12壓縮性能相比，斷裂強度和延伸率均有一定程度的增強；超細晶ly12的熱膨脹系數在550左右發生明顯的變化。Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol
Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。During depositing, the matrix temperature increases, the crystal grain grows and the grain size increases
薄膜沉積過程中，基片溫度升高，晶粒生長，薄膜晶粒尺寸增大。Along with the doping content increases, the dielectric constant initially increased and then decreased. the dielectric loss was on the contrary. 4. bt _ 4 doped with bi _ 2o _ 3 or v2o5 got a lower sintering temperature. a babi4ti4o15 phase raised when bi _ 2o _ 3 was doped and the dielectric properties ruined
3 . bst中摻雜zro _ 2 ，晶粒尺寸增大，摻雜量較大時會產生第二相bazro _ 3 ，介電常數隨摻雜量的增大呈現先增大后減小的趨勢，介電損耗則先減小后增大。It has not only better physics machine function, but also better bio - compatibility, bone - combined character than bio - metal and alloys, bio - ceramics and bio - macromolecule etc. making use of the water heat synthesization method, air current comminution method and classification filtration composite technique has preparated even crystal of ha, average particle size is 280nm
本文研製了無機纖維增強pmma ha人工顱骨復合材料，該復合材料與金屬材料、陶瓷材料和高分子材料相比，不僅具有良好的物理機械性能，而且具有良好的生物相容性和骨結合特性。利用水熱合成法、氣流粉碎法和分級篩分等多種技術制備了粒徑均一的ha晶體，平均粒徑為280nm 。The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。The size of the zno nanocrystal grain was so little that the quantum confinement effect should be considered. that makes the band gap wide. atom transfer rate is affected by the substrate temperature, and the average size of the zno nano crystal grain increases with the increasing substrate temperature resulting in the red shift of pl emission position and the narrowness of pl fwhm
低溫生長的氧化鋅晶粒小，考慮到量子限制效應，禁帶寬較大；襯底溫度影響吸附原子遷移能力，隨著溫度升高，晶粒的尺寸增大，分佈變的均勻，因而發光峰位隨著襯底溫度的升高而紅移，發光的半高寬變小。By the increasing of temperature, liyco3 - xo4 was further changed into licoo2 and lixco1 - xo, and then licoo2 formed by the reaction of lixco1 - xo with li2o. the reaction that produces licoo2 is almost completely done at 700, although some remaining li2o and li2co3 present as a partially amorphous film dispersed on the surface of licoo2, which can accelerate the growth of licoo2 crystallites. however, when temperature is higher than 850, some of licoo2 begin to decompose into the solid solution phase of liyco2 - yo2 and lixco1 - xo, and damaged its own crystal structure
制備licoo _ 2的合成反應中licoo _ 2的微結構不斷發生變化，隨著焙燒溫度升高， co _ 3o _ 4晶粒逐漸減小， licoo _ 2晶粒和顆粒逐漸長大，晶格內部缺陷減少， licoo _ 2晶格趨于完整，在焙燒溫度為850時licoo _ 2晶粒達到最大值；焙燒溫度低於700 ，晶胞參數a隨著焙燒溫度上升而減小，晶胞參數c隨著焙燒溫度上升而增大；而高於700則晶胞參數基本保持不變。Changing the grading of sic particles not only affects the strength and pile density, but also modifies the phase compositions and microstructure of the material. with the reducing of sic particles, the strength of the material increases obviously. the nitrification scheme has the greatest influence on phase compositions and microstructure " of si3n4 ( si2on2 ) - sic, after two continuous nitrification reacting peak and short - time high - temperature treating, the best properties can be obtained ; and the residual strength of the composite is much higher after the thermal shock resistance test, which shows that the material possesses excellent thermal shock resistance
本論文較全面地探討促進強度和顯微結構良好的si _ 3n _ 4 （ si _ 2on _ 2 ）結合相的實驗條件，實驗數據顯示：引入適量的燒結助劑能夠促進si _ 3n _ 4 （ si _ 2on _ 2 ）的生成和晶粒的長大，而過量時，其促進作用反而下降；隨著si粉加入量增加，生成的結合相明顯增多，復合材料的性能顯著提高；改變sic顆粒級配不僅影響復合材料的強度與堆積密度，而且對復合材料的物相與顯微結構也有影響，隨著顆粒逐漸細化，材料的強度有較大的提高；對復合材料的強度、物相與顯微結構影響最大的是氮化制度，經過兩個氮化高峰連續的反應和短時間的高溫后處理得到的復合材料性能最好；通過抗熱震性能實驗后復合材料的殘余強度較高，顯示出較好的抗熱震性能。For the fe - 2 % c - 4 % v - 4 % mo - 5 % cr - x % w alloy system, the peak value of quenching appears in 950 - 1100. the peak value increases with the increment of w. when the content of w is 2 %, the temperature of temper hardening is 550. for the fe - 2 % c - 4 % v - 4 % mo - 5 % cr - 2 % w alloy, the appropriate quenching temperature can be controlled in 1000 1050 and the time of preserving heat is 12min
57 （原於百分比，人分析表明， mg的變質作用的產生是由於mg影響了合金元素的偏析，使得基體組織中合金元素含量增加，相當于使合金分配系數k更偏離於1 ，從而促進了形成縮頸、晶粒繁殖和成分過冷傾向。Polarization microscope had observed that the size of sphere crystal of pp after adding organic rigid particles became smaller, the excellent compatibility of interphase between matrix and organic rigid particles in composite has been proved, and the organic rigid particles were drew out into cavities from matrix in the photograph of the impact breaking section by sem. the reason of enhanced toughness of the composite is that the material absorbed amount of energy at forming cavities, which is the mechanism of the pp composite toughened with the organic rigid particles
偏光顯微鏡顯示加入有機剛性粒子可使pp的球晶尺寸減小， sem觀察到復合材料中基體材料和剛性粒子的界面相容性較好，在沖擊破壞的材料斷面上，剛性粒子明顯被拔出形成「空穴」 ，這些微小空穴較易產生而吸收能量，從而提高了材料的斷裂韌性，這是剛性粒子復合聚丙烯的增韌機理。We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band
另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。Vanadyl phthalocyanine ( vopc ) films prepared by vacuum deposition were annealed under magnetic field. uv - visible absorption results showed that the films annealed under magnetic field showed a q - band red - shift. x - ray diffraction study ( xpj ) ) indicated enhancement in diffraction intensity and shift of peak position
分析表明酞菁氧釩分子uv - vis吸收譜q帶峰值發生較大的紅移； xrd測試中衍射峰強度明顯增強，峰位變化，但峰寬變化不大；原子力顯微鏡（ afm ）分析發現晶粒大小無明顯變化。B - doped diamonds were obtained under the condition of 1250 ~ 1350 and 5gpa ~ 6gpa. color of diamond became deep with boron contents increasing, till becoming black. b - doped diamond was polycrystalline, and crystal surface was developed incompletely
利用這些gics ，在1250 1350 、 5 6gpa下合成了含硼金剛石，金剛石顏色隨著硼含量增加而加深直至黑色，含硼金剛石生長成多晶顆粒，晶面發育不完整。The increase in average grain size of a polycrystalline material ; for most materials, an elevated - temperature heat treatment is necessary
多晶體材料中晶粒尺寸的增大，對大多數材料來說，晶粒長大隻在升高溫度加熱的時候發生。分享友人