晶體空位 的英文怎麼說

中文拼音 [jīngtǐkōngwèi]
晶體空位 英文
lattice vacancy
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  • 空位 : 1 （空著的位子） a vacant or unoccupied seat; void; vacancy 2 [固體物理] [物理學] [半] vacancy; b...
  1. The as - grown crystals were characterization by cutting and directional, x - ray diffraction, high resolution ohmmeter, ir transmission spectroscopy, visible light absorption spectroscopy, scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ). the ir transmittance of czt single crystals grown with cd - riched is about 53 %, while 23 % with no cd riched

    採用解理實驗、 x射線衍射、電學性能測試、紅外透過譜測試、可見光吸收譜測試、 sem蝕坑分析、探測器的試制等分析測試方法，並首次採用正電子湮沒壽命譜分析方法來研究czt單晶體的空位缺陷，綜合表徵了所生長的晶體的質量和性能。
  2. For series lnlp, the compounds crystallize in the triclinic, space group pi

    晶體解析表明，同類配合物具有相似的配位模式和空間結構。
  3. Inorganic anti - cracking reinforced chemical additive, called wj, generates some tittle expansive crystals in hydration process in concrete to reduce the porosity and improve the distribution of pore size. the expansive power is process in common to tumefaction that petty crystalloid aft suck water and pressure to concrete pores that aft crystal gather volume. its adding weight was 8 % - - 12 % in cement, its restrained expansive ratio was about 0. 02 % - - 0. 06 %, and relevantil brought self - stress 0. 2mpa ?. 6mpa

    無機增強抗裂材料wj摻入普通混凝土中，在水化硬化過程中生成一定量的微膨脹結晶體，降低空隙率，改善混凝土中孔結構分佈。其膨脹驅動力是凝膠尺寸的晶體鈣礬石吸水腫脹和結晶狀鈣礬石對孔隙產生膨脹壓的共同作用。當wj摻量為8一12兒在鋼筋和鄰位的限制下，使混凝土產生0
  4. In manganite perovskites, substitution of divalent ions ( alkaline earth metals viz. ca, sr, ba ) in the a sublattice, introduces mn4 + ions or holes into the system. it is generally considered that the concentration of holes is equal to the concentration of divalent cations because of the charge compensation by controlled valencies

    在類鈣鈦礦型晶體結構中通過摻入二價堿土金屬（如ca ， sr ， ba ）可以在系統中產生mn ~ （ 4 + ）或氧空位，由價格補償的原理，理論上摻入的二價離子的濃度和氧空位的濃度相等。
  5. Ca, sr, ba ) in the a sublattice, introduces mn4 + ions or holes into the system. it is generally considered that the concentration of holes is equal to the concentration of divalent cations because of the charge compensation by controlled valencies. a number of publications exist in the literature on the synthesis of manganite perovskites

    在類鈣鈦礦型晶體結構中通過摻入二價堿土金屬（如ca ， sr ， ba ）可以在系統中產生mn ~ （ 4 + ）或氧空位，由價位補償的原理，理論上摻入的二價離子的濃度和氧空位的濃度相等。
  6. Abstract : we have studied the spontaneous emission from a three - level atom with an external - driving field in a photonic crystal. as a result of quantum interference and photon localization, the population in the two upper levels displays quasi - oscillatory oroscillatory behavior. this depends on the initial atomic state and the relative positions of the two upper levels from the forbidden gap. the intensity and the phase of the external field can affect spontaneous emission from the atom. the properties are different from a three - level atom either in vacuum or in aphotonic crystal without an external driving field

    文摘:討論了在雙光子驅動場作用下，三能級原子在光子晶體中的自發發射問題.由於量子干涉和光的局域化作用，兩個上能級中的占據數將具有周期振蕩或準周期振蕩的性質，這不僅依賴于兩個上能級與禁帶的相對位置，同時也依賴于原子的初始狀態，而且還與驅動場的強度、驅動場的入射位相有關.這些性質既與真空中帶有驅動場的原子的自發發射性質不同，也有別于無驅動場作用下光子晶體中三能級原子的自發發射性質
  7. Such control can be realized in case where a atom interact with photonic band gap matericals when the atom is placed in photonic crystals whose density of modes is dramatically different from that of free space vacuum. it was known that control could be achieved by varying the frequency ( which leads to the changes of the relative position of the upper levels from the forbidden gap ) or by varying the photonic density of modes ( dos ) or by varying the intial atomic state

    由於光子晶體具有不同於真空中的光子態密度，原子和光子帶隙材料便發生相互作用，這樣便可以控制原子的自發輻射。改變原子上能級與光子禁帶邊緣的相對位置、材料中的光子態密度或原子初態都可以控制原子的自發輻射。
  8. According to the guidline, two nd : yag lasers have been designed and set up, one is end - pumped by lower output power ld using a selfoc micro lens, and the other is end - pumped by high output power ld using a pair of lenses are designed, and the characteristics such as output power and power stabilization of both solid - state lasers are investigated. thirdly, when an empty liquid crystal cell is inserted in the cavity of the nd : yag laser pumped by high power ld, the laser can operates in single axial mode. finally, according to the relationship between the laser output power and the longnitudinal a ld - end - pumped nd : yag laser sensor for displacement measurement has been investigated theoretically and demonstrated experimently, the results indicate that when the mean radius of pumping inside the laser cavity is far less than that of the oscilating laser mode, the exponential of the output power is a gauss function of the longitudinal positon of focused spot of ld pumping beam, both the measurement range and the sensitivity are dependent on the incident pumping power, as the incident pumping power is increased, the measurement range is enlarged and the sensitivity is improve d

    本文首先介紹了ld泵浦nd ： yag激光器的發展狀況、主要特性及其應用，從四能級速率方程出發，推導了ld泵浦nd ： yag激光器的閾值、輸出功率和斜效率的表達式，並簡述了激光器的工作原理、結構型式和倍頻方法；其次，以空間相關的速率方程為基礎，提出了ld端面泵浦nd ： yag激光器的設計方法，給出了一定泵浦耦合方式下，振蕩光模尺寸、最佳輸出耦合率、泵浦光模尺寸、泵浦光焦斑位置等參數的選取依據，以此為依據，設計了自聚焦透鏡耦合小功率ld泵浦nd ： yag激光器和透鏡組耦合高功率ld泵浦nd ： yag激光器，對激光器的輸出功率和功率穩定性等特性進行了實驗研究；再次，在帶尾纖輸出的高功率ld泵浦nd ： yag激光腔內插入一隻空液晶盒，觀察到了激光器以單縱模運轉；最後，根據泵浦光焦斑端面位置對激光輸出功率的影響規律，提出了ld端面泵浦nd ： yag激光位移傳感新方法，並進行了理論和實驗研究，研究結果表明：當激光晶體內泵浦光平均光斑半徑遠小於振西安理工大學碩士學位論文蕩光束腰半徑時，激光輸出功率的自然指數與泵浦光焦斑的縱向位置成高斯變化規律，測量范圍和靈敏度依賴于泵浦功率，隨著泵浦功率的增加，測量范圍擴大，靈敏度提高，當端面泵浦功率為7 . 24w （最大輸出功率為1 . 926w ）時，激光位移傳感器的測量范圍和靈敏度分別是13 . 045mm和0 . 148mw / pm 。
  9. Another possibility is that the crystal of helium contains numerous defects and lattice vacancies ( yet another effect of the zero - point motion )

    另一種可能是氦的晶體中有許多缺陷和晶格空位（也是零點運動所造成的） 。
  10. This thesis work has researched the fabrication technics of photonic crystal defect waveguide with air - bridge structure and collecting waveguide ; suggested using uv - lithography and wet etching to fabricate traditional waveguide, after that, using eb - lithography and dry etching to fabricate photonic crystal holes, so can reduce the fabrication cost by a big range ; designed the moulding board, which can fabricate the air - bridge structure and is convenient for recognizing position in eb - lithography ; the structure consisted of traditional waveguides and etching grooves are fabricated on soi successfully, then an successful eb - lithography is realized on the structure, the defect waveguide collected with the traditional waveguide quite well ; used the etching grooves to do the sacrificial layer etching experiment, which grounded etching sacrificial layer by photonic crystal holes in next step

    提出採用紫外光刻工藝製作傳統波導結構之後，通過電子束曝光和干法刻蝕製作光子晶體小孔的工藝方案，大幅度減低了製作成本；設計出可形成空氣橋結構、並且適用於電子束曝光位置識別的光刻模板，在soi材料上成功製作出帶有空氣橋刻蝕預留槽以及接續光波導的結構，在該結構上成功實現了光子晶體帶隙波導的電子束曝光，帶隙波導與接續光波導位置接續良好；最後利用預留槽進行了刻蝕犧牲層的實驗，為下一步利用光子晶體小孔刻蝕犧牲層形成空氣橋結構打下了基礎。
  11. After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate

    運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。
  12. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  13. In te - rich cdte crystals, at high temperature cd vacancies were the dominant point defects, while at low temperature the concentrations of te anti - sites, te interstitials and cd vacancies were all very high

    富te的cdte晶體中，高溫下，晶內多餘te形成的原子缺陷主要是cd空位。低溫下，則晶內te反位原子、 te間隙原子和cd空位的濃度都很高。
  14. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  15. The creep cavity location and damage of polycrystalline material was studied, and it was considered that there was a great correlation between the cavity sites, creep damage and grain size, and the damage often occurred in the location where grain size was small

    摘要研究了多晶體材料在高溫蠕變下的空洞出現位置和損傷特點，認為同一組織下空洞的出現及蠕變損傷的位置與晶粒尺寸有關系，晶粒尺寸小的部位易發生損傷。
  16. Then the optical path difference can be obtained with psi algorithm and to use the phase value for each pixel to determine a height value for each pixel. a primary advantage of psi is its high precision. with careful control of environmental conditions, measurement precision to the nanometer scale or below is possible with psi

    它的基本測量原理是，通過攝像系統（ ccd ）接受到的干涉圖中空間坐標已知的各個像素點的光強信號，在壓電晶體驅動參考光程有序變化時，採集到多幅干涉圖的光強信號，由移相干涉法，由光強值得到被測光程差值（位相值） 。
  17. Based on the rate - equation theory of four - level system, the expressions of threshold pump power, output power and slope efficiency are given. the influence of space distribution of pump light ( the position of focusing point, dimension of pumping light and divergence angle ) to the output characteristics are also discussed. then, by investigating the effects of thermal effect of laser crystal on the size of laser cavity mode, we obtain the mode - matching principle of high power laser diode end - pumped solid - state lasers

    其中，在泵浦光的空間分佈變量中我們分別考慮了泵浦光聚焦后的腰斑大小、聚焦腰斑在增益介質中的位置以及泵浦光在介質中發散角的影響；然後我們研究了在高泵浦功率下激光晶體因吸收泵浦光而產生的熱效應所導致的熱透鏡效應以及熱致衍射損耗，通過分析它們對振蕩激光腔模尺寸的影響，得到了高功率半導體激光二極體端面泵浦固體激光器模式匹配的要求，為高功率連續單頻nd ： yvo _ 4激光器的優化設計提供了理論依據。
  18. Ld - pumped nd : yag, lbo ( type - i critical phase matching ) intracavity frequency doubled, blue laser at 473nm was obtained finally. under the condition of 14w pump power, high power tem00 mode blue laser at 473nm of 1. 1w was obtained. by means of inserting diaphragm into cavity, the power fluctuation and beam mode were improved ; in the experiments, the proportion of special mode matching in quasi - three - level laser was discovered, and the phenomenon were explained reasonedly

    實驗上採用對熱效應不敏感的三鏡折疊腔， ld泵浦nd : yag ，類相位匹配lbo作為倍頻晶體，獲得了1 . 1瓦的連續473mn藍光輸出；採用腔內插入光闌的方法，有效克服了功率抖動，同時改善了光斑模式；實驗中發現準三能級激光器存在兩個空間模式匹配比例關系，並對這一現象給出了合理的解釋。
  19. In photorefractive crystal light illumination changes the refractive index of the crystal due to linear electrooptical effect, which in turn changes the light distribution. as a result of the development of this process, a beam, called the phase conjugation wave, leaves the crystal back along the direction of the incident beam and is its phase conjugate replica

    光折變晶體在光輻照下，通過晶體中的線性電光效應而產生折射率隨光強的空間分佈而變化，即在晶體內建立起體相位柵。
  20. The quasi - chemical equilibrium for cdte and znte were inspected independently while the influences of the integration crystal lattice were taken into consideration by the united concentration of vacancies, anti - sites, and the cation interstitials

    將（ cd ， zn ） te視為替代型晶格點陣，獨立地考察其中cdte和znte的偽化學平衡。同時，通過統一的空位、反位原子及陰離子間隙原子濃度來反映整體晶格環境的影響。
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