柵電路 的英文怎麼說

中文拼音 [zhàdiànlù]
柵電路 英文
grid circuit
  • 柵 : 柵名詞（柵欄） railings; paling; palisade; bars
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. Common grid circuit

    共柵極電路
  2. Measurements of the electrical properties of transmitting tubes - measuring methods of static characteristic curve for common grid circuit

    發射管電性能測試方法共柵電路靜態特性曲線的測試方法
  3. Two other effects are transient phenomenon called single event upset ( seu ) and single event latchup ( sel ). in this paper, some means to harden the devices against these phenomena are used. guard banding around nmos and pmos transistors greatly reduces the susceptibility of cmos circuits to lachup

    在本文設計中，採用雙環保護結構，大大的降低了cmos集成電路對單粒子閂鎖效應的敏感性；對nmos管採用環型柵結構代替傳統的雙邊器件結構，消除了輻射感生邊緣寄生晶體管漏電效應；採用附加晶體管的冗餘鎖存結構，減輕了單粒子翻轉效應的影響。
  4. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  5. Charge pump circuits that make use of charge accumulation in the capacitor can pump charge upward to produce voltage higher than the regular supply voltage, and they are widely used in memory circuits, such as flash memory, for the programming and erasing of the floating - gate devices

    電荷泵是一種運用電荷在電容中的積累來產生高壓（高於電源電壓）的電路，它廣泛應用在存儲器電路中，諸如flashmemory ，用於對懸浮柵器件進行寫或擦除操作。
  6. By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability

    然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。
  7. In large dimension measurement techniques, on the two - dimensional optical microscopy work platform displacement signals collection, the introduction of raster feet to achieve large dimension measurements designed raster signal acquisition circuits, a collection of analytical studies of the key circuits, the corresponding solutions, and discussed work platform displacement signals, image data and the actual dimension ; meanwhile driving mechanism designed electrical circuit, laying the foundation for the measurement of two - dimensional work platform automatically

    在超屏幕尺寸測量技術中，關於二維光學顯微工作臺位移信號採集，採用了光柵尺來實現超屏幕尺寸測量，設計了光柵信號採集電路，分析研究了採集電路中的關鍵性問題，提出相應的解決方案，並討論了工作臺位移信號、圖像數據與實際尺寸的關系;同時設計了電機驅動介面電路，為二維工作臺自動測量奠定基礎。
  8. In the beginning, the working principle, testing and data processing system of pdl micro - control material test machine is introduced ; then more attention is paid to the hardware system which is composed of high precision raster linear displacement sensor, high precision force sensor, the digital displaying sets, the interface equipments and the controlling circuits etc to perform the data collection and ensure the testing precision of the whole system

    論文首先介紹了pdl材料拉伸試驗機的工作原理、測試及數據處理系統；接著詳細介紹了由高精度光柵線位移傳感器和壓力傳感器、數顯裝置、介面裝置及控制電路等組成的新的硬體系統，來完成數據採集，並保證整個系統的測試精度要求。
  9. During the circuit design, the author analyzed the basic principle of the direct current motor, pwm control, h - bridge power driver, and two control techniques of h - bridge power drive circuit, designed its general structure, so the feasibility of the design is confirmed. then, reference, oscillator, power dmos gate drive circuit ( charge pump, bootstrap ), and dead time generation circuit are designed and analyzed in the sub - circuits. a current - controlled oscillator is presented in this thesis

    在電路設計中，作者介紹了直流電機的工作原理和數學模型、脈寬調制（ pwm ）控制原理、 h橋電路基本原理和h橋功率驅動電路的兩種控制模式，設計了驅動電路的總體結構，給出了電路的功能模塊，確定了設計的可行性，然後在子電路模塊中，重點分析設計了基準源電路、振蕩器電路、高端功率管柵驅動電路（電荷泵及自舉電路） 、低端功率管柵驅動電路和死區時間產生電路。
  10. And the grating signal receive circuit, fpga module circuit and output signal interface circuit are integrated into one board - dual grating signal process board

    並將fpga模塊電路、雙光柵尺信號接收電路與外部介面電路集成為自行設計的雙光柵尺信號處理卡。
  11. A particular over - current protection and drive circuit is given, the impact of resistance between gate and emitter on gate voltage dropping is discussed, and an adjustable gate - emitter resistance circuit is put forward

    設計了過電流保護驅動電路，討論了柵射集電阻對降柵壓過程的影響，並提出一種可變柵射集電阻電路。
  12. During this precess, using the technology of optimizing the widths of both common source mosfet and common gate mosfet under a fixed power, we obtained a compromised result of power consumption and noise figure

    設計過程中，在限定功耗的前提下，主要針對共源晶體管和共柵晶體管的柵寬，對電路的性能進行了優化，使得設計的lna的噪聲系數最小。
  13. We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure. for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters. mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling

    移相器電路採用gaasmesfet開關作為控制元件，研究了mesfet開關等效電路參數與材料和器件結構參數的關系，設計製作了不同柵寬的六組mesfet開關，並進行參數測試和模型參數提取，建立了相應于mmic工藝線的mesfet開關模型庫；根據開關模型參數隨柵寬的變化規律，可以實現任意柵寬mesfet開關的參數定標工作。
  14. A study of discerning direction and subdivision circuit about grating signal with moir 233 ; fringe based on dsp

    的光柵莫爾條紋信號辨向與細分電路研究
  15. The hardware of the system is made up of p89c61x2ba as main processor, usbn9604 as usb interface, grating signal - processing circuit, xc95108 as signal subdivision, sensing, counter circuit and so on

    硬體部分以p89c61x2ba為控制核心，包括採用usbn9604介面晶元的usb介面電路，光柵尺輸出信號處理電路，以xc95108為主的信號細分、辨向和計數電路等。
  16. In the part of hardware design, the grating signal processing module is designed in a cpld device. the methods of realizing the functions of filtering, four - subdivision, sensing, counting and mcu interface are described in detail

    在介面卡硬體設計中，採用cpld器件設計了光柵信號處理電路，詳細論述了光柵信號處理電路中濾波、四細分、辨向、計數和與單片機介面等功能的實現方法。
  17. Due to temperature performance of fbg, a reference fbg is adopted to compensate temperature and the compensation principle is expounded. moreover, this scheme not only realizes temperature compensation but also reduces repeatability error of ffptf and errors from power fluctuation of light source, noise of pd and noise of electro - circuit. in the end, temperature and strain performance of fbg is tested and

    基於光纖光柵的溫度響應特性，提出用一個參考光柵來進行光纖光柵傳感陣列溫度補償的設計方案，並論述了其補償原理，證明了該方法的可行性；同時可以看出，該方法不僅可以實現溫度補償，也可以減小光纖f - p可調諧濾波器的重復性誤差以及光源功率波動、探測器噪聲和電路噪聲等引起的誤差。
  18. Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit

    日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。
  19. The large gate current brings out a lot of questions such as thermal stability, thermal dissipation, lifetime etc, so, it affects the device ' s function and the device ca n ' t work normally

    如此大的柵電流，將會產生很多嚴重的問題，如熱穩定性、散熱、壽命等問題，嚴重地影響著器件性能，使器件不能正常工作，以致限制了集成電路的進一步發展。
  20. On the one hand, the design uses low voltage cascode op framework to improve its gain ; on the other hand, it applies self - bias and cascode structure to the whole sensing circuit. by using the improved method, we have successfully obtained low power consumption, low offset, high linear and high psrr ptat current generator under low power supply

    在電路設計上一方面改進運放結構，採用低壓共源共柵結構以提高其增益，另一方面整體傳感電路採用自偏置結構和共源共柵電流鏡結構，在低電源電壓下成功設計了低功耗、低失調、高線性度和高電源電壓抑制比的ptat電流產生電路。
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