柵電流 的英文怎麼說

中文拼音 [zhàdiànliú]
柵電流 英文
gate current
  • 柵 : 柵名詞（柵欄） railings; paling; palisade; bars
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. This article introduces briefly the process of design and characteristic of structure of db930 tube and discusses the main problems of technology and technique which was met during the manufacture and the measures having been adopted are emphatically. it discusses the solve measures in following six aspects : the filament current is too large, carbon deposits during the carbonizing of cathode, the capacitance between the first grid and the second grid is too large, transpiring happens inside the tube, the insulation resistance between the electrodes is too lower when the filament is on and the ability of bearing high voltage is too lower

    本文簡略地介紹了db930的設計過程及其結構特點，重點論述了在試制過程中遇到的主要工藝技術問題及解決問題的措施，圍繞解決燈絲電流大、陰極碳化時積碳、一柵和二柵之間的電容大、管內蒸散、熱態時極間絕緣低、耐高壓的能力差等六個方面的問題進行了論述。
  2. Capacitive grid current

    柵極電容電流
  3. Critical grid current

    臨界柵極電流
  4. Measurements of the electrical properties of transmitting tubes - measuring methods of reverse grids current

    發射管電性能測試方法柵極反向電流的測試方法
  5. I designed a measuring system which can measure the anode current 、 anode voltage 、 grid current and grid voltage at one time. working at manual mode the system can sever as a measuring instrument

    根據要求，設計一個場發射參數的測量系統，此系統，工作在手動方式下可以測量出某一時刻點的場發射的陽極電流、陽極電壓、柵極電流、柵極電壓。
  6. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  7. Based on an amplified spontaneous emission ( ase ) source, a ring - cavity fiber laser, in which sensor element acted as the reflector of the cavity, was achieved with high - signal noise ratio ( snr ) and high - power. it was demonstrated that the output power was maximum, when output coupler ratio of the coupler was seventy percent

    實驗證實耦合器的輸出耦合比選為某一個最佳值70 ，當980nm泵光工作電流為50ma時，其輸出功率達3 . 5mw ，且輸出激光波長與作為反射鏡的光纖光柵中心波長相同。
  8. We have done a serial of experiments to study the pam and anode grid with the aids of the measurement such as constant current charge / recharge, cyclic voltammetric measure ments, electric impedance spectrum and so on

    我們通過恆電流充放電、交流阻抗和循環伏安等實驗方法和測試手段對鉛酸電池的正極活性物質和板柵進行了一系列的研究。
  9. By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability

    然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。
  10. So a conclusion can be got that the annealing in n2 raises the la2o2, stability. 3. the exact solution and wkb approximation are compared, the exact solution agrees with the wkb approximation in calculating the mono - layer sio2 tunneling current, but the wkb approximation is inappropriate for the dual layer oxide - lanthanum structure, while the exact algorithm can give a exact result

    比較了wkb和精確解法計算柵介質隧穿電流的方法，精確解法在解決單sio _ 2層和wkb準經典近似有相同的結果，但是wkb不適合計算la _ 2o _ 3 / sio _ 2雙層柵介層的隧穿電流，而精確解法能精確地計算雙層柵介質隧穿電流。
  11. The main work is done with the help of model experiment. in the flood - relief experiment, the flood carrying capacity of spillway tunnel is checked. in the hydraulic experiment of the diversion power conduit system, the followings are studied : the flow condition and fluctuation in the surge chamber, the distribution of flow velocity before the rack in the surge shaft, the amplitude of stage in the quick gate bay etc. the test step, content and results of different proposals are introduced in details

    本項優化試驗研究的目的主要在於，通過泄洪系統整體水力學試驗，校核泄洪洞的泄流能力；通過發電引水系統整體水力學試驗，研究調壓井內水流流態和水位波動情況、調壓井內攔污柵前流速分佈情況；確定快速閘門井內水位波動幅度；試驗確定壓力管道水擊壓力穿井系數以及泄洪洞弧形門處的水壓力。
  12. Compared to other commonly referenced high - k materials, hfo2 is known for its stability on silicon and process compatibility. the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied. with the study on hfo2. we can receive a few significative conclusion : 1

    結果表明，與傳統的hf清洗的si表面相比， nh _ 4f清洗的si表面與hfo _ 2具有更好的熱力學穩定性，因而可獲得更低的eot和柵泄漏電流密度； 3 ）研究了濺射氣氛和退火工藝對hfo _ 2柵介質薄膜性質的影響。
  13. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  14. With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded

    當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。
  15. For the demand of output swing, the bias is provided by high - swing cascode current mirrors

    為了獲得高輸出擺幅，設計低壓共源共柵電流鏡為運放提供偏置。
  16. Slowly - drop gate voltage and softly turn - off principles are explained in this article, specific parameters are also listed

    摘要闡述了軟降柵壓和軟關斷的過電流保護原理，列出具體的保護時序參數。
  17. A particular over - current protection and drive circuit is given, the impact of resistance between gate and emitter on gate voltage dropping is discussed, and an adjustable gate - emitter resistance circuit is put forward

    設計了過電流保護驅動電路，討論了柵射集電阻對降柵壓過程的影響，並提出一種可變柵射集電阻電路。
  18. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏極脈沖電流崩塌測試中，發現脈沖條件下漏極電流比直流時減小大約50 % ;脈沖信號頻率對電流崩塌效應影響較小;當柵壓較小時，隨著脈沖寬度的改變漏極電流按i0 （ + t / 16 ）的規律變化。
  19. The large gate current brings out a lot of questions such as thermal stability, thermal dissipation, lifetime etc, so, it affects the device ' s function and the device ca n ' t work normally

    如此大的柵電流，將會產生很多嚴重的問題，如熱穩定性、散熱、壽命等問題，嚴重地影響著器件性能，使器件不能正常工作，以致限制了集成電路的進一步發展。
  20. On the one hand, the design uses low voltage cascode op framework to improve its gain ; on the other hand, it applies self - bias and cascode structure to the whole sensing circuit. by using the improved method, we have successfully obtained low power consumption, low offset, high linear and high psrr ptat current generator under low power supply

    在電路設計上一方面改進運放結構，採用低壓共源共柵結構以提高其增益，另一方面整體傳感電路採用自偏置結構和共源共柵電流鏡結構，在低電源電壓下成功設計了低功耗、低失調、高線性度和高電源電壓抑制比的ptat電流產生電路。
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