極間漏電 的英文怎麼說

中文拼音 [jíjiānlóudiàn]
極間漏電 英文
interelectrode leakageg
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 漏電 : leakage of electricity; leakage漏電保護 earth leakage protection; 漏電保護開關 earth leakage circ...
  1. The influence of separating magnetic flux method of rotor with u ' s and tangential permanent magnet to the pole - to - pole leakage factor is analyzed by finite element method ( fem ), and given the rule of design

    通過對pmsm進行電磁場求解，分析了u型結構和切向結構轉子磁路結構的隔磁措施對電機極間漏磁系數的影響，提出了設計準則。
  2. The main work of this thesis analyzes the organic static induction transistor ' s operational mechanism, and researchs the change of gate length, change of gate - drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor

    本論文的主要工作是解析有機靜電感應三極體的工作機理，並研究了柵極長度變化、柵漏極間距變化和導電溝道的寬度變化對有機靜電感應三極體工作特性的影響。
  3. It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance

    在制備多晶硅tft時，由於機器的套準誤差會在柵極與源、漏極之間產生重疊部分，這樣就造成了柵源、柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶硅tft的性能，而利用自對準工藝制備的多晶硅tft則避免了交疊電容的產生。
  4. The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level

    本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。
  5. In fet devices, the presence of an electrical field at the gate moderates the flow between the source and drain

    在fet器件中，柵極電場的存在會調節源極和漏極之間的電流。
  6. Quasi - static capacitance has been measured, when drain voltage is 0v, and gate voltage changes from ? 5v to 0v, the surface peak

    採用應力測試方法，獲得了algan / ganhemt漏極電流隨時間的變化。
  7. By using phase shifting control between right bridge leg and left bridge leg, the output cy cloconverter commutating while the bi - polarity three - state high frequency ac volage from the input cycloconveter is zero, . and commutation overlap of the output cycloconverter and polarity selection of the input voltage, the leakage inductance energy and the output filtering inductance current are naturally commutated, and zvs switching of the output cycloconverter are realized, the surge voltage and surge current of the output cycloconverters are overcome

    通過輸入周波變換器右橋臂相對左橋臂的移相，讓輸出周波變換器功率開關在輸入周波變換器輸出的高頻交流電壓為零期間進行換流，並藉助輸出周波變換器換流重疊和輸入電壓極性選擇，從而實現了變壓器漏感能量和輸出濾波電感電流的自然換流、輸出周波變換器的zvs開關，解決了輸出周波變換器固有的電壓過沖和環流問題。
  8. Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit, series mode micro - switch with cantilever structure is similar to an fet, when voltage is applied on gate, and the fet will be turned on between source and drain

    有靜電電壓作用在梁和底面電極時，梁發生偏轉，在源極和漏極之間實現導通，常用於自控和通信系統的信號通路空氣橋旁路開關主要用於微波段信號的通路。
  9. Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research

    本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化硅的制備方法和測試方法;第五章介紹了多晶硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。
分享友人
分享到 Line

分享到臉書