橢圓光度法 的英文怎麼說

中文拼音 [tuǒyuánguāng]
橢圓光度法 英文
ellipsometry
  • : Ⅰ形容詞(卵形) oval-shapedⅡ名詞[書面語] (長圓形的容器) elliptic vessel
  • : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ...
  • : 度動詞[書面語] (推測; 估計) surmise; estimate
  • : Ⅰ名詞1 (由國家制定或認可的行為規則的總稱) law 2 (方法; 方式) way; method; mode; means 3 (標...
  • 橢圓 : [數學] oval; oval shaped; ellipse; ellipsoid橢圓規 ellipsograph; [圖] elliptic trammel; 橢圓軌道 ...
  1. The laser power is detected through the pd ’ s movement across the faculous region. when the value of the peak value of laser power is got, the power of the facular boundary points can be found according to definition of the facular boundary such as “ 1 / e ~ 2 ” theory. then the equation of the facular boundary can be made fitting by using the least square method, and calculate the beam divergence at last

    採用兩個電探測器分別檢測束不同高上的兩個斑,在確定斑中心最大強值后,根據斑截面尺寸的1 / e2定義,得到斑截面邊界點的強值,並以其為標準判定斑截面的邊界點,對探測到的邊界點通過最小二乘進行擬合,得到斑截面的方程,根據空間幾何關系求出發散角。
  2. Finally, we propose the third mirror scheme to reflect atomic by using a blue - detuned semi - flattened - gaussian beam ( sfgb )

    顯然,採用半束蘭失諧高斯束作為原子反射鏡,在相同的反射鏡面積下,可比sgb反射鏡反射更高向速的入射原子束。
  3. The composition, structure, and properties of the as prepared composite films have been characterized in detail by uv - vis, ftir, and x - ray photoelectron spectra, ellipsometry, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, fluorescence spectroscopy, and standard four - probe technique

    採用uv - vis譜、 ftir譜、 x -射線電子能譜、橢圓光度法、掃描電子顯微鏡、原子力顯微鏡、透射電子顯微鏡、熒譜和標準四探針技術對所制備的納米復合膜進行了組成、結構和性能表徵。
  4. Secondly, according to the basic theory of the general spectrometer, in this paper we discuss the fundamental, the compositions and the characters of tcecs. we analyze the main influencing factors for resolving power, such as the dispersion of the x - ray on the detection circle, spectra location error and the aperture width etc. and we put out the ways to resolving the problems

    接下來,本文根據經典譜儀器的基本理論,著重討論了雙通道彎晶譜儀的基本原理,及其基本組成和基本特性,並從x射線波長在探測上的彌散參數與探測角之間的關系、狹縫寬等方面對譜儀的精和解析的影響作了一定的分析,並提出了解決問題的辦
  5. The outline of fiber ' s tip has very great influence on the coupling efficiency. it is reported, using the way of grinding and melting to form a microlens on the fiber ' s tip, can increase fiber ' s numerical aperture, reduce the ellipticity of laser, and improve coupling efficiency

    纖端面的形狀對耦合效率有很大的影響,有文獻報道,採用拋磨燒熔等加工方,可在纖端面形成一個微透鏡,增大纖的數值孔徑,對入射激進行校正,從而提高耦合效率。
  6. The chemical composition, micro - structure and optical properties and its application of tio2 thin films deposited on k9 glass by using reactive electron - beam evaporation ( reb ) are studied through sem, tem, xps, xrd, spectroscopic ellipsometry ( se ) and uv - vis spectrophotometer in the dissertation, and the progresses of nucleation and growth of thin film are discussed from the point of view of dynamics and thermodynamics so that a structure model of tio _ ( 2 ) thin film is brought forward

    本文採用sem 、 tem 、 xps 、 xrd 、偏振儀( se ) 、 uv - vis分計等分析手段系統地研究了電子束反應蒸發方在k9玻璃上制備tio _ 2薄膜的成分、結構和學性能以及tio _ 2薄膜在學多層膜中應用,並開發了膜系設計軟體。文中還從動力學和熱力學角分析了tio _ 2超薄膜的形核生長過程,得出了tio _ 2薄膜的組織結構模型。
  7. On the other hand, with traditional iterations and the conjugate gradient ( cg ) as smoothers, we can show the optimal convergence rate of the cascadic method in energy norm for 1 - d and 2 - d cases. when the mesh level is arbitrary, we use a duality argument and obtain the quasi - optimality of the algorithm only for 2 - d problems

    另一方面,採用傳統迭代子和共軛梯作為滑子,我們證明了瀑布型多重網格對一、二維非線性邊值問題,在能量范數下,均可獲得最優收斂階。
  8. The best process for high quality tio _ ( 2 ) thin film deposited on k9 glass by reb is studied by using orthogonal test method, the se results indicate that the best process for tio _ ( 2 ) thin film deposition is the substrate temperature of 300, the total gas press in the chamber of 2 x 10 ~ 2pa and the deposition rate of 0. 2 nm - s - 1, of which the substrate temperature has influence on the optical properties of the deposited films notably

    文中首先以tio _ 2薄膜的折射率和消系數為研究對象,採用l9正交試驗研究了在k9玻璃上制備高學質量tio _ 2薄膜的最佳工藝條件。偏振儀的測試結果表明,制備tio _ 2薄膜的最佳工藝條件為:基片溫300 ,工作真空2 10 ~ ( - 2 ) pa ,沉積速率0 . 2nm ? s ~ ( - 1 ) ,其中基片溫對薄膜學常數的影響最大,該結果具有較好的可重現性。
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