橫向結晶 的英文怎麼說

中文拼音 [héngxiàngjiējīng]
橫向結晶 英文
transcrystallization
  • 橫 : 橫形容詞1. （蠻橫; 兇暴） harsh and unreasonable; perverse 2. （不吉利的; 意外的） unexpected
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 橫向 : broadwise; infeed; crossrange; abeam;transverse; transverse direction; cross; crosswise; lateral;...
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. Secondly, based on the microbeam analytical technique, on the one hand, through investigating the characteristic of major elements in the mantle minerals the author acquired the static information from mantle ; on the other hand, through multi - point analysis of a part of the minerals from mantle, the auther got dynamic information from mantle. finally, generalizating the fruits of this study and predecessors, the autor holds that the constituents of lithospheric mantle possibly includes spinel lherzolites, clinopyroxenites, websterite, dunite, harzburgites, garnet lherzite, phlogopite lherzite, eclogites, clinopyroxene megacrysts ; compared with east china and north china platform, the research field mantle shows the characteristics of higher degree of partial melting processes and more depleted mantle ; the. upper mantle beneath north hetian area is heterogeneous, with a tendency of deficit in a12o3 and lree from kaliyang in west hetian to the river basin of kalakshi river and yulongkashi river ; the subduction of the crust beneath north hetian has ever occurred in geological history and caused the mixing of mantle - crust ; the depth of the origination of basaltic magmas beneath north hetian exceeds 73km ; the thickness of the lithosphere beneath the research area amounts to 204. 9km ; the mantle beneath north hetian has geological condtions for forming diamond deposits

    最後，綜合本區幔源礦物和地幔巖石的特徵以及地球物理資料，得出如下結論：本區上地幔的物質組成有尖晶石二輝橄欖巖、二輝巖、單斜輝石巖、純橄欖巖、方輝橄欖巖、石榴石二輝橄欖巖、金雲母二輝橄欖巖、榴輝巖；與中國東部以及華北地臺上地幔相比，研究區上地幔具有富集主元素中相容元素和虧損其中的不相容元素的特徵，局部熔融程度較高；上地幔存在橫向和縱向的不均一性，從西部的克里陽到喀拉喀什河和玉龍喀什河流域， al和lree富集程度呈下降趨勢，不同來源的相同礦物中主元素的含量差異較大；地質歷史時期這里可能發生過地殼俯沖並產生殼幔混合作用；玄武巖漿的起源深度73km ；從幔源重砂礦物的溫壓估算結果，可以推斷出巖石圈厚度可達204 . 9km ；綜合巖石圈物質組成特徵、巖石圈熱狀態、地幔溫壓狀態、氧逸度以及幔源巖石和幔源礦物的化學成分，認為研究區具備了金剛石成礦地幔地質條件。
  2. Zircaloy - 4 sheet, which was cold - worked followed by recrystallization annealing, exhibits longer lcf life in the rolling direction than that in the transverse direction, and the fact that difference in lcf life between both directions becomes larger as the range of plastic strain becomes lower can be attributed to the texture effect, p - solution treatment deteriorates the alloy ' s lcf property because the treatment lowers the average value of alloy ' s schmid factors, and the subsequent annealing - treatment in a - phase range has a impact on the lcf properties, i. e. the subsequent annealing - treatment at 500 ? for 1. 5h results in better property than that at 750 for 1. 5h, which comes mainly from the fact that the alloy annealled at 500 for 1. 5h has lower amount of the precipitate particles than the alloy annealled at 750 for 1. 5h

    對于冷加工后經再結晶退火處理的zr - 4合金，軋制方向的低周疲勞壽命比橫向要大。隨著_ p的降低，兩個方向的低周疲勞壽命的差別相應增加，這是由於合金中存在織構的緣故。冷加工后經再結晶退火處理的zr - 4合金在固溶處理后，抗疲勞性能明顯降低，這主要是由於固溶處理降低了合金的schmid因子；固溶處理后在相區的退火對疲勞性能有影響，即500 1 . 5h退火的抗疲勞性能要優於750 1 . 5h退火，這主要與500 1 . 5h退火的合金中沉澱相粒子的數量較少有關。
  3. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  4. The most achievement is that we firstly obtain the analytic accurate solution of the modal fields of the waveguide structure and find some available character : ( 1 ) the different uniaxial crystal materials have the different propagation properties ; ( 2 ) when the optical axis of the crystal is on the plane that is made up of the normal direction of the waveguide plane and the propagation, there are te mode and tm mode in this special waveguide, but the principal mode is different of the character of the uniaxial crystal, the principal mode is the principal mode of te mode for the negative uniaxial crystal, but the one of tm mode for the positive uniaxial crystal ; ( 3 ) when the crystal optical - axis parallel to the waveguide plane, for the positive uniaxial crystal material, the principal mode of the waveguide is a te wave, which can be excited by the light at any frequency ; when the light frequency satisfies a single mode propagation condition, there will be only the principal mode propagating in the waveguide, otherwise some of the higher order modes can be excited, which are neither te modes, nor tm modes, but the hybrid guided modes

    本文就是在此背景下，利用金屬波導和單軸晶體的一些特性，結合麥克斯韋方程組和波導的邊界條件，從三種不同的情況研究了光在對稱平面單軸晶體金屬波導（波導層是單軸晶體，兩個波導界面均為金屬）內的傳輸特性，其主要貢獻為，首次解析地得到了這種波導結構下模式場的精確解，並發現了一些有用的特性： （ 1 ）模式場的性質因單軸晶體的性質不同而異； （ 2 ）當單軸晶體光軸位於波導界面法方向與傳輸方向構成的平面內時，波導中傳輸te波和tm波，只不過其主模因單軸晶體的性質不同而異，當波導層介質為負單軸晶體時，波導主模是te波主模，而波導層介質為正單軸晶體時波導主模是tm波主模。 （ 3 ）當單軸晶體光軸位於波導面內時，對于正單軸晶體，波導的主模是橫電波te _ 0模，任何頻率的光波均可激勵該模式；當光波波長滿足一定條件時，波導內傳輸單模，否則，將激勵起高階模式，高階模即匪te波，也匪tm波，而是兩者耦合而成的混合模。
  5. While cyclic deformation experiment under constant strain control is performed in 400, the material shows the continuous hardening until cyclic invalidation. ( 3 ) back stress attained by kwl " s method is used to analyse the bauschinger effect during an incremental step cyclic test and cyclic deformation test under constant strain control, it is shown that back stress increases with increasing plastic strain and the numbers of cycle, and the back stress is uniform, regardless of tension or compression conditions. ( 4 ) as far as recrystallized zircaloy - 4 plate is concerned, the back stress in transverse direction is higher than that in rolling direction due to the higher schmid factor in rolling direction

    對于再結晶狀態的zr一4合金板材試樣來說， t方向（橫向）試樣的背應力要高於r方向（軋制方向）的背應力，原因在於r方向的schmid因子高於t方向的schmid因子; 400下， zr一4合金的背應力要明顯低於室溫下的背應力;含氫200pg / g的zr一4合金的背應力大小與無滲氫的zr一4合金背應力相比，無明顯區別;固溶處理后， zr一4合金的背應力大小發生了變化，在較高塑性應變下，背應力均高於固溶處理前的背應力。
  6. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  7. The introduction of lateral rods firstly induced the decrease of crystallization ability, which resulted in the descent of melting points. further increasing the lateral rods centent resulted in the increase of polymers " melting points. but it was interesting that the solvability was enhanced all the time

    橫向液晶基元的引入首先導致聚合物結晶能力的下降，熔點降低；進一步增加橫向液晶基元的含量，聚合物的結晶能力又逐漸增加，熔點升高，但是，聚合物的溶解性始終變好。
  8. At the same time we obtained that the shg conversion efficiency of the flattened gaussian beam is higher than that of the gaussian beam under the same condition ; in section 3, we have computed the theoretical conversion efficiency of the thg on the flattened gaussian beam, where we also have worked out the type - i and type - 11 ( 1 ) thg conversion efficiency curves versus the same effectors, and found the flattened gaussian beams thg conversion efficiency is higher than that of the gaussian beam too ; in the section 4, we have simulated the field distribution of the shg and thg wave on the flattened gaussian beam

    在相同條件下，得出了平頂高斯光束的倍頻轉換效率高於高斯光束的倍頻轉換效率；第三章對平頂高斯光束在clbo晶體上的類和類混頻轉換效率與其影響因素的關系進行了數值模擬和計算，並同高斯光束進行比較，同樣得到混頻時，平頂高斯光束的轉換效率高於高斯光束的混頻轉換效率的結論；第四章模擬計算了平頂高斯光束的倍頻、混頻波橫向光場的分佈形式，得到了諧波場仍為均勻平頂高斯光束的結果。
  9. It will be known from the obtained expression of the resolution of photoconductor that the column microstructure is benefit to reduce the carrier diffusion in the lateral direction and increase the resolution of the photoconductor

    這種各向異性的柱狀結構復合光導膜有利於減小光生載流子的橫向擴散長度，從而可以提高液晶光閥光導層的解析度。
  10. The principle and the application of liquid crystal light valve ( lclv ) and the development of the photoconductor of lclv have been reviewed in this paper. the growth mechanism of amorphous silicon film is analyzed. the resolution of the photoconductor that is affected by the lateral diffusion of the photo - carrier in photoconductor layer is also analyzed

    本文介紹了液晶光閥光導層的發展、液晶光閥的工作原理及應用，分析了非晶硅薄膜的生長機制以及載流子的橫向擴散對解析度的影響，詳細研究了nc - si a - si ： h柱狀結構復合光導層液晶光閥的制備工藝。
  11. The impacts of the volume of end groups on the properties of synthesized polymers were also investigated. all the polymers had lower melting points, which indicated that the polymers could easily turn into a liquid crystalline state

    考察了橫向液晶基元含量對聚合物溶解性、液晶態和化學結構的穩定性的影響，以及末端基大小對聚合物性質的影響。
  12. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。
分享友人
分享到 Line

分享到臉書