氧化物電介質 的英文怎麼說

中文拼音 [yǎnghuàwùdiànjièzhí]
氧化物電介質 英文
oxide dielectric
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 物 : 名詞1 （東西） thing; matter; object 2 （指自己以外的人或與己相對的環境） other people; the outsi...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 氧化物 : oxide; oxyde; oxidizing material; oxidate
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. The sterilizer takes advantage of high temperature disinfection principle, which destroys cell bioplasm, denatures protein, and concentrates electrolyte to kill microorganisms

    利用高溫乾熱對微生物有氧化、蛋白質變性、電介質濃縮引起中毒等作用。
  2. The obtained biosensor exhibits high sensitivity, excellent reproductivity and good stability with substantially improved performance. part two describes the manufacture and characterization of glucose oxidase - silver sol - polyvinyl butyral modified platinum electrodes with tris ( 2, 2 ' - bipyridyl ) cobalt ( iii ) perchlorate as an electron transfer mediator in the glucose solution

    用納米ag溶膠固定god ，採用聚乙烯醇縮丁醛為輔助固酶膜基質修飾鉑絲電極，並以葡萄糖溶液中的co恤pyh （ cio4 ） 3為電子媒介體組成葡萄糖氧化酶生物傳感器。
  3. We can classify thin films into four groups : thermal oxides, dielectric layers, polycrystalline silicon, and metal films

    我們可以把薄膜分成四組：熱氧化物，介電質層，多晶硅，金屬薄膜。
  4. Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit

    日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。
  5. In this dissertation, high quality ( 002 ) textured zno films were prepared on silicon substrate using electron beam evaporation method. in addition, zno nano - particle material embedded into mgo thin films was prepared by a co - evaporation ( thermal and electron beam evaporation, simultaneously ) method and a following post - annealing process in oxygen ambient

    本文介紹了採用電子束蒸發方法在si襯底表面上制備出了具有c軸擇優取向的高質量氧化鋅薄膜材料，另外，還採用共蒸發（通過電子束蒸發與熱蒸發同時進行）及後退火的簡單方法制備出包埋到介電物質mgo薄膜中的zno量子點材料。
  6. Ir - ta - ti metal oxide coated titanium anodes of variable composition were prepared by thermal decomposition. their micro morphorogies and electrochemical properties were characterized by scanning electron microscope, open circuit potential, cyclic voltammetry, consumption rate measurements and accelerated life test. the sem results indicated that all coatings were of a porous and cracked - mud microstructure influenced greatly by the composition of coatings. the electrochemical measurements showed that the ir - ta - ti ternary oxide - coated anodes exhibited excellent electrochemical activity and electrochemical stability in both acidic media and seawater which were affected by the composition and microstructure of the coatings. owing to good corrosion resistance and low consumption rate in seawater, metal oxde coated anodes belong to insoluble material, and can be potentially applid in impressed current cathodic protection systems as an anode

    採用熱分解方法在鈦基體上制備銥鉭鈦金屬氧化物陽極，用掃描電鏡對陽極塗層顯微形貌進行分析，通過強化電解壽命試驗、開路電位測試、消耗率試驗及循環伏安曲線研究了金屬氧化物陽極的電化學性能. sem分析結果表明銥鉭鈦金屬氧化物陽極塗層呈現多孔多裂紋形貌結構.隨陽極塗層組成不同，塗層顯微形貌表現出很大差異，這種差異直接影響陽極電化學性能.電化學性能試驗結果表明銥鉭鈦金屬氧化物陽極在酸性介質和海水中具有良好的電化學穩定性和電化學活性.此外，銥鉭鈦金屬氧化物陽極在海水中的消耗率很低，屬于不溶性的陽極材料，作為外加電流陰極保護用輔助陽極具有廣泛的應用前景
  7. Tio _ 2 has been known as an n - type metal oxide semiconductor and an important inorganic function material. it can be used in fabricating medium material, photocatalytic films, reducing reflect coat, gas sensor, etc. tio _ 2 films had excellent performance with photocatalysis, resisting photo erode, difficult dissolution in acidity condition, innocuity and stabilization in light and soon on

    Tio _ 2是n型金屬氧化物半導體，是一種重要的無機功能材料，可用於製作電介質材料、光催化薄膜、減反射塗層、氣敏傳感器等。 tio _ 2薄膜具有優異的光催化性能，抗光腐蝕，在酸性條件下難溶，對光穩定，無毒等。
  8. Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2

    自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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