法直拉晶體 的英文怎麼說

中文拼音 [fǎzhílājīngtǐ]
法直拉晶體 英文
cz
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  • 直 : Ⅰ形容詞1 （成直線的; 硬挺的） straight; stiff 2 （跟地面垂直的; 從上到下的; 從前到后的） erect; v...
  • 拉 : 拉構詞成分。
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. In the paper, we describe the whole configuration of the joint transform correlator ; introduce the correlative theories of joint fourier transform in detail ; in order to achieve better correlation result, the nonlinear processing of joint transform power spectrum ( jtps ) is put forward, the effect of jtps laplace sharpening and binary processing to the correlation image is given ; the method of the best binary threshold is determined ; we analyse the correlation image, present the way that removes liquid crystal diffraction spot, direct current spot and image noise, and binarize the correlation image finally

    本論文主要對提出的聯合變換相關的整體結構進行了描述；詳細介紹了聯合傅里葉變換的相關理論；為了得到更好的相關結果，本文提出對聯合功率譜進行非線性處理的方法，給出了聯合變換功率譜的拉普拉斯銳化和譜的二值化處理對相關峰圖像的影響及二值化最佳閾值的確定方法；對相關峰圖像信息進行了分析；提出了消除液晶衍射光斑、直流光斑和圖像噪聲的方法；最後對相關峰圖像進行了二值化處理。
  2. The tensile and compression experiment on bulk nanocrystalline ag prepared by igc method was carried on mt810 with different grain sizes and zwick 10tn2s machine at different strain rates under normal temperature respectively. the stain rate sensitivity m was found to be 0. 025, which was extremely lower than the ordinary values. also the work hardening exponent is very low

    本文從用惰性氣體蒸發冷凝和真空原位壓結法（ igc ）制備得到的直徑80mm ，厚度7 . 6mm的大尺寸納米晶金屬ag樣品上切割得到符合力學實驗要求的拉伸和壓縮試樣，在mts810和zwick精密力學測試機上分別精確測定了拉伸和壓縮應力?應變曲線與晶粒尺寸和應變速率的關系。
  3. The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection

    本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。
  4. Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic

    以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。
  5. In this paper, germanium concentration in ge - dopped silicon bulk single crystals was measured by the methods of indution couple plasma ( icp ) direct reading spectrometer, sims, sem - edx, and the effective segregation coefficent of germanium under the situation of the changed speed was calculated, the result was 0. 62. according to the result, the curves of different ge concentrations were got

    本論文利用二次離子質譜（ sims ） 、化學分析法（電感耦合等離子體（ icp ）直讀光譜儀） 、掃描電鏡能譜儀（ sem - edx ）三種方法對不同摻鍺濃度的czsige單晶中鍺含量進行了測試，並對變速拉晶條件下鍺的有效分凝系數進行了計算，得出鍺的有效分凝系數（ ke ）為0 . 62 。
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