注入工藝 的英文怎麼說

中文拼音 [zhùrùgōngyì]
注入工藝 英文
injection technology
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 工 : Ⅰ名詞1 （工人和工人階級） worker; workman; the working class 2 （工作; 生產勞動） work; labour 3 ...
  • 藝 : Ⅰ名詞1 （技能; 技術） skill 2 （藝術） art 3 [書面語] （準則） norm; standard; criterion4 [書面語...
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. Considering the shortcoming of thick epitaxial layer technology, author proposed a thin epitaxial layer ldmos used n - burry layer. through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage

    針對目前厚外延工藝的缺點，提出的薄外延ldmos採用n埋層，通過優化n埋層長度、注入劑量可提高器件耐壓。
  2. A lot of experiments have been done in the process of exploiture soft packaging li - ion battery about how to choice the rational arts and crafts. the content include : how to deal with the collector, add how much pvdf in the material, how long the material need to stirring and the right viscidity, how much condubtivity agent the electrode need, what theckness is best, choice different collectors, the degree of dryness of the electrode, theckness of pressed model, how much electrolyte will be added, placement how long after added the electrolyte, system of formation how to influnce the battery, in formation the battery need or not need preesure from outside, how to vacuumize and the optimize matching positive pole and negative pole. with these practice make sure the parameter of the positive pole should less than 90 m ; according to different vacuumize order the conduc - tivity agent in anode will be 5mass % and 9mass %, respectively, and in cathode the data is 2mass % ; every 100mah added to 0. 4 ml electrolyte ; before formation the battery should be placement 8 hours and the system of formation must be less than 0. 01c before the voltage reach to 3. 0v ; should press in outside when battery in formation ; to these batteries which capacity more than 350mah the vacuum time not excess 15s ; the optimize matching positive pole and negative pole between 2. 10 : 1 and 2. 15 : 1. finally make out the battery which cycling performance and security are all very well

    液態軟包裝鋰離子電池的研究主要是對關鍵工藝進行了優化設計，具體包括:集流體的處理、 pvdf的加入量、漿料攪拌時間和粘度、導電劑的加入量、電極膜的厚度、不同集流體的選擇、電極膜的乾燥程度、壓型的厚度、電解液的加入量、注入電解液后靜置時間的長短、化成制度的影響、化成時電池所具有的壓力影響、抽真空的處理、正負極活性物質的匹配。最後確定出液態軟包裝鋰離子電池最佳工藝參數:正極膜的厚度小於90 m ;根據化成時不同抽真空順序，確定正極膜中的導電劑的加入量分別為5mass %和9mass % ;負極膜中導電劑的加入量為2mass % ;電解液的加入量為每100mah添加0 . 4ml ;化成前電池的靜置時間應當大於8h ;電池在3 . 0v之前採用小於0 . 01c的化成制度;在化成過程中應當施加一定的外部壓力;對於350mah的電池抽真空的延時不應大於15s ;而正負極活性物質的質量比應當在2 . 1 : 1 2 . 15 : 1之間。
  3. From the introduction of the structure and characteristic of dcs, the analyzing in process and control peculiarity of huaxin type cement kiln and the analyzing in the ordinary forms of computer control system in the cement plant, to determine the feasibility of application of the dcs in computer control system of huaxin type cement kiln ; introduced the structure of the system hardware, constitutes and characteristic of the industrial network, the characteristic and the performance in industrial control system of the software system ; illuminated the whole course of the design and the application of simatic s7 - 300 programmable controller in the industrial producing process profoundly : the protraction of a control flowchart ; the confirmation of the control scheme in every cell ; how to workout a table of the all controlling and measuring dots in the control system ; how to set up a plc control project ; the configuration of the hardware and the network in project ; illuminated the course of how to program the plc control program in detail ; how to establish a connection between the plc and the programmer ; how to download the configuration and the program of the plc project ; the configuration of control center software simatic wincc ; the whole course and the methods of the control system debugging ; illuminated the essential in the course of the design in project and program ; illuminated the problem and its respondence maybe encountered in the project ; illuminated the superiority of the new control system in inspecting, operating and its stability ; discuss the development of the computer control system in the application of the huaxin type cement kiln

    從介紹了dcs的結構、特點和分析華新型水泥窯的工藝控制特點及當今在水泥窯計算機控制系統上採用的幾種常見形式的比較出發，分析了在華新型水泥窯應用dcs的可行性；詳細介紹了系統硬體結構、網路組成及特點、所採用的軟體體系的特點及其在工業控制應用中的性能；深入詳細地說明了西門子s7 - 300可編程序控制器在華新型水泥窯控制上應用及設計的全過程：控制流程圖的繪制；單元控制方案的確定；系統控制測點表的編制； plc控制項目的建立；項目硬體及網路的組態； plc控製程序的編制過程並詳細說明了控製程序的編制思路； plc與編程器連接的建立； plc項目組態及控製程序的下載； wincc監控軟體的組態；控制系統的調試過程及方法；對設計和使用的要點及系統調試時應注意的問題進行了說明；對項目的實施后的華新型水泥窯控制系統在操作和控制上及其在系統易維護性、系統穩定性上的優勢進行了說明並討論了華新型水泥窯計算機控制系統的發展方向。
  4. For the first time, an integrated hall switch based on gaas mesfet process was fabricated

    論文首次採用gaas直接離子注入mesfet集成電路工藝，研製出了gaas霍爾開關集成電路。
  5. The chief function of the city is to convert power into from, energy into culture, dead matter into the living symbols of art, biological reproduction into social creativity

    為城市文化注入新的活力、將死氣沉沉的宣傳轉化為活生生的藝術創造、在單調的社會再生工程中體現無盡的創意，是城管部門的主要職責。
  6. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  7. Design of rapid thermal processing for ions implanted silicon

    快速退火爐離子注入退火工藝設計
  8. Abstract : this paper introduces the application and development of ion plating, ionodialysis, ion implantation and the compound technology

    文摘:介紹了離子鍍、離子滲、離子注入及其復合工藝的應用與發展。
  9. In order to study the influence of different process on the threshold voltage uniformity, gaas mesfets are fabricated both in recessed - gate process and planar selectively implanted process

    分別對採用隔離注入挖槽工藝和平面選擇離子注入自隔離工藝制備的gaasmesfet閾值電壓均勻性進行了比較研究。
  10. The influence of different process on gaas mesfet sidegating effect has been studied. these process include recessed - gate process, planar selectively implanted process and planar boron implanted process

    本文對分別採用隔離注入挖槽、平面自隔離和平面離子注入隔離三種工藝制備的gaasmesfet旁柵效應進行了研究。
  11. Equally significant is the reduction in the power required to run the furnaces using the new waste plastic injection technology

    它的重大意義就是通過使用新的廢棄塑料注入工藝來減少煉鋼爐運轉需要的能量。
  12. Aimed at the helium damages in plutonium caused by a decay, he + ions were implanted in aluminum and the behaviors of helium in aluminum were investigated both theoretically and experimentally to simulate those effects in plutonium. at the same time, the diffusion of helium - 3 produced by tritium decay in stainless steels, which were served as the structural materials in tritium and fusion technologies, was also investigated in this thesis

    針對放射性元素鈈的衰變引起的氦損傷問題，選擇模擬材料鋁進行了he的離子注入和其中氦行為的理論和實驗研究，同時，也研究了氚工藝及聚變堆技術結構材料不銹鋼中氚衰變~ 3he的擴散行為，從而對兩種金屬中he的行為有了較深入的認識。
  13. Fabrication of the box beam is divided into such parts as reinforcement, formwork, concreting, prestressing, moving and storing of beam, pipe grouting under pressure, end sealing of the beam, water - proof layer on the bridge surface system, protective coating etc. the paper makes description of effective box beam construction technology and workmanship which can be adopted in other projects, such technologies as : manufacturing and fixing of reinforcement, steel reinforcement fixing baseplate, web plate and top plate respectively and lifting the steel skeleton into form, requirements of design and manufacturing and way of utilization for dismantling - erection type formwork and hydraulic formwork, optimization of concrete ratio, concrete pouring process of two ends of beam in priority over the middle, in sequence of first baseplate followed by web plate and top plate at last, concrete pouring in inclined section and in horizontal layer, concrete vibration mainly by external vibrator in assistance with internal vibrator, methods and regulation for steam curing of concrete, dual controls over stress and strain to ensure quality of prestressing workmanship, construction method of effective beam moving by heavy - weight special moving facility, some regulations and key notes about construction of grouting under pressure, beam ends sealing, water - proof layer on the bridge surface system, protective coating

    箱梁製造由鋼筋工程、模板工程、混凝土工程、預應力工程、移存梁工程、孔道壓漿工程、梁體封端工程、橋面防水層和保護層工程等施工環節組成。文中介紹的採用胎具製作和綁扎鋼筋，分底腹板和頂板分別綁扎並吊裝鋼筋骨架入模；拆裝式和液壓式兩種模板的設計、製作要求和使用方法；綜合考慮、優化混凝土配合比，混凝土灌注從兩端至中間、先底板、后腹板、再頂板的施工順序和斜向分段、腹板水平分層、附著式振搗為主、插入式搗固為輔的施工工藝，蒸汽養護的方法和規定；應力應變雙控制確保預應力施工質量的施工技術；採用重物移運器有效移梁的施工方法；壓漿、封端、橋面防水層和保護層施工的一些規定和注意事項等都是對箱梁製造行之有效的施工技術和施工方法，並可為以後類似施工作借鑒。
  14. Results show that the sidegating threshold voltage is higher when adjacent devices are isolated by boron implanted, which means that boron implantation significantly improves the electronical isolation between devices and reduces the sidegating effect

    結果表明，採用注入隔離工藝制備的mesfet的旁柵效應比採用自隔離工藝制備的mesfet的旁柵效應要小。這說明，採用注入隔離可以形成更好的器件隔離，減小器件的旁柵效應。
  15. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  16. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  17. Yiwu olan ornaments factory in black city europe is a foundation in 2001, owning employee s more than 200 personseses currently, is the professional factory house that produces a silk stockings flower, silk stockings craft butterfly, the silk stockings craft headdress. the my plant pays attention to the development work of the new sample very, through many years of abundant devotion product became a silk stockings craft butterfly, the etc. various insect imitate to living series, corsage series, headdress series, christmas gift series, dress accessories etc. the product is used for clothing, shoe industry, decoration combination etc. extensively by many factory houses

    中國義烏市歐蘭飾品廠是創立於2001年，目前擁有員工200餘人，是生產絲襪花絲襪工藝蝴蝶天使翅膀絲襪工藝頭飾的專業廠家。本廠十分注重新樣品的開發工作，經過多年的豐富投入產品形成了絲襪工藝蝴蝶蜻蜒等各種昆蟲的仿生系列胸花系列頭飾系列聖誕禮品系列服飾配件等。產品被眾廠家廣泛用於服裝鞋業飾品組合等。
  18. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  19. Abstract : anchor packer is one of the important downhole tools which areused in oil production and waterflood technical operation, such as layer waterflood, layer fracture or acidation, mechanical water block. after anchor is fixed in the simulated test unit, the invasion depth of the casing can be known with the help of the sensor around the casing wall, and then the failure degree is concluded. this is very important for the anchor packer design and site operation

    文摘:在油田開發中封隔器是實施機械採油、分層注水、分層壓裂或酸化、機械卡堵水等注采工藝作業的主要井下工具之一，封隔器上的卡瓦是保證工作可靠性的重要元件，把卡瓦安裝在模擬試驗裝置中，通過在套管壁周圍分佈位移傳感器，測得卡瓦錨定后切入套管壁深度，判斷卡瓦對套管的損傷程度，這對封隔器的設計和現場使用具有十分重要的意義。
  20. Doping - the process of the donation of an electron or hole to the conduction process by a dopant

    摻雜-把攙雜劑摻入半導體，通常通過擴散或離子注入工藝實現。
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