注入電極結構 的英文怎麼說

中文拼音 [zhùrùdiànjíjiēgòu]
注入電極結構 英文
injecting electrode structure
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  • 電極 : electrode; pole
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. A novel flash memory, which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming, and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation

    本論文首次提出了一種採用源極誘導帶帶隧穿熱電子注入（ sourceinducedband - to - bandtunnelinghotelectroninjection ）進行編程操作的新型快閃存儲器技術和一種pmos選擇分裂位線nor （ pmosselecteddividedbit - linenor ）快閃存貯陣列結構。
  2. Using the typical moled structure glass / dbr / ito / htl / eml （ etl ） / al ， the el spectrum narrowing, intensity enhancement in the normal direction as well as emission intensity redistribution in space are observed. by the introduction of single layer silver film instead of the dbr / ito multilayer, a ( / 2 - length cavity is obtained. using this kind of microcavity, three - color single mode pl from a single material alq and three - color single mode el from double layers pvk / alq are achieved for the first time

    通過以金屬銀替代多層結構的dbr / ito ，既作為反射鏡，又作為el器件中的空穴注入電極，設計出腔長只有（ / 2的超短微腔，採用同一種寬譜帶材料alq作為光發射層，首次報道了三基色單模光致發光和pvk / alq雙層結構的三基色單模電致發光。
  3. After introducing the background and the trend of research on ppv thin film light - emitting diodes ( leds ) and the structure of ppv device and its characterizes, the theoretical model of the leds * light - emitting efficiency was presented. based on this model, the formula of light - emitting efficiency was deduced to be : the injecting - currents and the recombining - efficiencies were calculated nwnerically, we found the calculated results agreed very well with the experimental results under the electric field from 0. 5 x 106 to 1. 5 x 106v / cm, the numeral calculations and theoretical analyzes of the light - emitting efficiency were done. the conclusions were as follows : ( 1 ) the basic mechanism of the injection transportation and recombination of the carriers which were presented in this paper were proved to be right ; ( 2 ) the electroluminescence in ppv thin film is the result of exciton recombination, the light - emitting efficiency was affected by many factors

    本文主要研究聚對苯乙炔（ ppv ）薄膜發光二極體發光效率及主要影響因素，簡單地介紹了ppv薄膜發光二極體的研究背景及發展趨勢、 ppv器件的結構和性質后，提出了一個計算器件發光效率理論模型，利用這個理論模型得出了發光效率公式的表達式：並對注入電流、復合效率等進行了數值計算，通過合理地選擇計算參數，發現計算值在場強為0 . 5 10 ~ 6 1 . 5 10 ~ 6v / cm的范圍內與實驗結果較好地符合，在此基礎上，對發光效率進行了數值計算和理論分析，結果表明：計算結果與理論研究結果相符較好，得出結論如下： （ 1 ）本文的理論推導正確地反映了器件中載流子的注入、傳輸和復合等基本機制； （ 2 ） ppv薄膜中的電致發光是激子復合的結果，發光效率受多種因素影響。
  4. In this amplifying way, lasing was firstly realized in an organic emitting diode in the area. the gain region was produced by light pumping through ito side of the sample, and electrical injection was also applied

    按這種增益方式，在此領域首次在有機電致發光二極體結構中實現了受激發射，增益區的形成主要依靠通過ito一側的光泵浦，也配合了電流注入。
  5. 4 design of hb - led is focused on mqws and top layer. compensatory mqws for led active layers have led to good results follow the analysis in former two chapters. systematic analysis of current injection and light output via external quantum efficiency of hb - led showed mat the optimum of top layer of hb - led is appeared to be between 15 u m and 20 u m, and at least is 5 u m

    根據前兩章的分析設計出補償應變多量子阱的有源區結構；然後分析計算了器件的電注入和光輸出過程，指出降低頂層的電阻率和增加頂層厚度都可以使注入電流更有效地擴展到上電極外面的區域，增加厚度還可以增加器件的側面出光。
  6. The last part concludes that mr dampers is one of the very attractive control elements in semi - active control. as one of mixed model mr dampers, armature piston ' s mr dampers have principle designs good function and better practical value, it ' s worth to popularize use. about the armature piston ' s mr damper ' s designs, the space of work, the diameter of wok and the length of magnetic pole have obvious affects to the force of mr dampers, mr fluid materials should be paid attention, input electric current affects mr dampers greatly the high current increases the damping force, the effect of reduce vibration increase obviously,

    最後，論文給出了結倫：磁流變液阻尼器是半主動控制裝置中非常吸引人的控制元件之一，混合工作模式的磁流變阻尼器結構簡單，阻尼效果比流動模式和剪切模式均要好，是一種比較理想的磁流變阻尼器；電樞活塞式磁流變阻尼器作為混合模式磁流變阻尼器的一種結構形式，其結構設計合理，性能良好，具有較強的實用價值，值得在工程中推廣應用；在電樞活塞式磁流變阻尼器的設計中，應特別注意工作間隙h 、工作直徑d 、磁極長度卜都對阻尼器的阻尼力有明顯的影響，並注意選用合適的磁流變液材料；輸入電流對磁流變阻尼器的阻尼效果影響很大，輸入大電流時阻尼力明顯增大，減振效果明顯提高。
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