淀積速率 的英文怎麼說

中文拼音 [diànjīsùlǜ]
淀積速率 英文
deposition rate
  • 淀 : Ⅰ動詞（沉澱） form sediment; settle; precipitateⅡ名詞（淺的湖泊, 多用於地名） shallow lake
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 速 : Ⅰ形容詞（迅速; 快） fast; rapid; quick; speedy Ⅱ名詞1 （速度） speed; velocity 2 （姓氏） a surna...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 速率 : speed; rate; tempo
  1. With higher frequency of radar using and widening of radar using area, caused by increasing construction of doppler weather radar network, it certainly will lead to explosive accumulation of radar data

    我國多普勒天氣雷達網建設速度的不斷加快，雷達使用頻率的不斷提高和使用范圍的不斷擴大，勢必導致雷達基數據爆發性的淀積。
  2. Abstract : based on the concept of space migration length of photo - activation species, the analytical expression of the total number n of photo - activation species that can reach a segment on the substrate in the cubic deposition reaction space is derived. the simulation of the relationship of deposition rate and position of substrate is also completed. the simulation result agrees with the experiment data well

    文摘:基於光激活物質空間遷移長度的概念，推導出方形反應空間中到達基片上單位面積的光激活物質總數的解析表達式，對光化學汽相沉積中淀積速率和基片位置的關系進行了模擬和分析.模擬結果同實驗結果符合良好
  3. Various factors affecting the refractive index and the deposition rate of the deposited films are studied to optimize growth conditions of the films. the microstructures and optical properties of the films are characterized by a prism coupler, a fourier transform infrared spectroscopy ( ftir ) and an atom force microscopy ( afm )

    研究了薄膜折射率和淀積速率與工藝參數之間的關系，通過棱鏡耦合儀、傅立葉變換紅外光譜、原子力顯微鏡、掃描電子顯微鏡等測試手段，分析了薄膜的結構和光學特性。
  4. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  5. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  6. ( 1 ) two edt monomer synthetic paths have been investigated. ( 2 ) using the method of depositing the pedt film on the glass base, the affect of processing and environmental conditions - - such as the polymerizing temperature, the state of the polymer material, the polymerization correctives, the drying temperature, and the amount of the solution etc. - - to the pedt material ' s electroconductivity has also been examined in this paper

    主要研究內容包括： （ 1 ） edt單體合成路線的兩種方案，以及具體的制備過程； （ 2 ）在玻璃基片上淀積pedt膜層，研究了聚合溫度、聚合物狀態、聚合改良劑、烘乾溫度、溶劑含量等工藝及環境條件對pedt材料電導率和成膜速度的影響。
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