源漏結 的英文怎麼說

中文拼音 [yuánlóujiē]
源漏結 英文
source and drain junction
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  1. So these karst series problems are lowness ability of making soils, distributing odds of surface water and groundwater, leakiness of fountain, alkalescence of circumstance, lowness of bio - diversity, rapidness converse succession of vegetation and fragility of soil character and entironment. and karst region produces many problems, e. g. rock desert, soil erosion and degeneration because of artificial influence and destruction

    巖溶空間介質具有地上地下雙層結構，可溶巖造壤能力低，巖溶水空間分佈不均、地表地下水關系密切、水源易漏失，偏堿性環境、生物資源集聚程度低，植被逆向演替快、順向演替難，巖溶地質與生態環境十分脆弱，受到人為因素的影響和破壞，極易產生石漠化、土壤侵蝕與退化等一系列問題。
  2. Energy consume, electric strength, insulation resistance, ground conductivity, leakage current, microwave leakage, power input, normal temperature, humidity treatment, glow wire, horizontal flame, vertical flame, tracking, ball pressure, rainproof, water splash, dustproof, salt fog, endurance, motor load test, cord flexing, cord pulling, pull & torque test, lamp replacement, construction check etc

    能耗、電氣強度、絕緣電阻、接地連續性、泄漏電流、微波泄漏、功率、溫升、濕熱試驗、灼熱絲、水平燃燒、垂直燃燒、漏電起痕、球壓試驗、防雨淋、防濺水、粉塵、鹽霧、耐久性（壽命）試驗、電機負載試驗、電源線彎折、電源線提拉、拉扭力測試、燈頭互換性、安全結構檢查等。
  3. Firstly, it analyses economic character, competition situation, future and attraction of mobile communication industry in huazhou at present. secondly, it analyses the importance of resource, competition ability and customer orientation with swot method and value chain method. thirdly, with continuous competitive advantage theory and creative destruction theory, it illustrates that defense cannot protect the original competitive advantage in the severity competition situation, and that the only source for continuous competitive advantage is continuous creation and method of pursuing a scries of temporary dynamic advantage

    首先，分析了當時華州移動通信行業的經濟特性、競爭態勢、前景及吸引力；接著，運用swot 、價值鏈等分析法分析了aaa的資源、競爭能力及客戶導向的重要性；然後，運用持續競爭優勢和創造性破壞理論，闡明在激烈競爭的新形勢下，防禦已不能保護原有的競爭優勢，只有通過不斷地創新，追求獲得一系列暫時的動態優勢的方法，才是構築持續競爭優勢的源泉，從而形成aaa的戰略選擇；最後，運用漏洞分析法和核心競爭力分析等，結合動態戰略管理的理念，導出aaa的戰略實施方案，提出了戰略計劃。
  4. For the leakage often occured on condenser brass pipe of hanchuan power plant, using differential inner insert detecting coil the on - line multi - frequency eddy current check technology effectively restrains interferance source signal from support board, etc, improves measuring sensitivity and the measuring result gets more reliable

    摘要針對漢川電廠凝汽器銅管在運行中多次發生泄漏，利用差分內插式檢測線圈，通過多頻渦流檢測技術對凝汽器進行渦流在役檢測，有效地抑制了支撐板等干擾源信號，提高了檢測靈敏度，使得檢測結果更可靠。
  5. The carrier wave is modulated directly by the baseband signal at several frequency point in l band and s band. firstly, this paper clarifies the theory of i / q modulation, elaborates evm and acpl, and analyzes the effect of amplitude and phase unbalance and dc offset on evm. secondly we review the basic principle of phase locked loop and it ’ s composing parts, including the basic conception and design method of pll frequency synthesizer, especially introduce the charge pump pll frequency synthesizer in detail

    首先，在闡述i / q正交調制基本原理的基礎上，通過對誤差矢量和鄰近通道功率泄漏的詳細分析，定性、定量地討論了各種非理想電路因素（如相位不平衡、幅度不平衡、直流偏差等）對調制器性能的影響;其次，介紹了鎖相環的工作原理和基本組成部分，包括鎖相環的設計和環路濾波器的設計，特別詳述了電荷泵鎖相頻率源;第三，介紹了採用直接調制技術模擬衛星信號的射頻前端的設計;最後，對整個直接射頻調制系統進行測試，結果基本上達到了課題要求。
  6. In the design of the device, a kind of junction termination technology, polysilicon field plate was introduced at the edge of source and drain of the device. it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points

    在器件設計過程中，在源端和漏端都採用了多晶場板技術，減小了表面pn結和nn +處的峰值電場，避免了器件在這兩處過早擊穿。
  7. Meanwhile, on the basis of the network topology this paper detailedly states the formation of funneling effect and origin of funneling noise, and also demonstrates its huge damage to network

    漏斗噪聲的根源就在於網路的樹狀拓撲結構，並指明了漏斗噪聲可以對網路造成巨大的危害，嚴重的時候使得網路無法正常運行。
  8. Making use of existed technology of vulnerability scanner and combined the distributed character of electronic government affair network platform, studying on the theories of security scanning products inexistence, a new type of network vulnerability scanner system model was introduced and designed. the system itself took distributed agent software as the core ， with the designing in the service of different construction and quality network platform

    利用現有的漏洞檢測技術，結合電子政務網路平臺的分佈性，對安全漏洞的產生根源和漏洞掃描系統的工作原理等方面的研究做了深入的分析，揭示出目前網路安全檢測產品中對計算機網路安全漏洞動態產生以及相應檢測模塊的發展更新的忽視，並提出了分散式的數據模型。
  9. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  10. Ensure resources are not leaked in the case of an abrupt unload, since an application s correctness cannot be guaranteed, but the integrity of the server must be maintained by not leaking resources

    卸載期間對象不會終結。要確保資源在突然卸載的情況下不會泄漏，因為不能保證應用程序的正確性，但卻必須通過不泄漏資源來維持服務器的完整性。
  11. It is shown that neglecting the gate - drain capacitance of the mosfet would lead to an overestimation of the optimum device width in the cmos source degenerated lna

    本文證明了在cmos源端degeneration結構的低噪聲放大器中，忽略場效應管的柵漏電容將造成對放大管的最優柵寬估計過大。
  12. Test of power grounding : receive the command, then begin to open, read the 24th route data from the power screen moulding board after 8 second of open stabilization. the result can send automatically, the data enter into the respond cache ( differentiate rate is 1k second )

    電源對地漏流的測試：收到命令，進行開出，在開出穩定后（ 4秒） ，讀入電源屏模入板第24路數據，結果自主發送，數據進入應答緩存（解析度1毫安） 。
  13. It is found that the height of the metal electrode, the distance between the source and drain electrodes, the thickness of the sio

    研究了場效應納電子晶體管構造過程中金屬電極的結構設計，源-漏電極高度sio
  14. The scc has the following advantages : remarkably reducing the noisy pollution and the worker s labor intensity in construction, deducing the rough surface or segregation because of missing - vibration or excessive - vibration in conventional construction, resolving the quality - defect problems resulting from lacking - vibration in the section of complex shapes and densely - packed reinforcement area. at the same time, large of industrial solid waste such as fly ash and blast furnace slag is utilized in the proportioning of scc. it is helpful in comprehensive utilization of resource and environment protection, so the scc belongs to " green concrete ", it is a branch of hpc which will be developed in the future

    這種混凝土可以顯著降低混凝土施工中的噪音污染；大幅度減輕工人的勞動強度；減少傳統混凝土施工中因漏振或過振造成的麻面或離析；解決了配筋密集、結構復雜部位因振搗不足而造成的質量缺陷問題；同時，由於自密實混凝土在配製中，大量利用粉煤灰、高爐礦渣等工業固體廢棄物，有利於資源的綜合利用和生態環境的保護；從而被譽為「綠色混凝土」 ，是未來混凝土向高性能發展的方向之一。
  15. At the stage of comparison of drafts, according to the fact of water resources in laiwu city, and the case of the water replenished together with used in qiaodian reservoir, it analyses that the water level heightened is necessary and feasible. it sums up an easy, rational and facile means that can be generalized in water design units at grass roots, according to choosing a best scheme by fuzzy comprehensive judgement. in the course of designing engineering, it has obtained the results such as the seepage of dam bottom, verifying the safety of dams, and the design of reinforcement, so that it ensures the safety on the engineering, and achieves the aims of prospective

    在方案論證階段，根據萊蕪市水資源狀況及喬店水庫來水用水情況，分析了抬高興利水位的必要性和可行性，採用模糊數學綜合評判的方法，總結探討出一種簡單合理，易於操作，在基層水利設計單位具有一定推廣價值的方案優選辦法；在工程設計中，主要對大壩壩基滲漏，大壩安全校核及加固設計進行了計算，並對大壩加固設計進行模糊優選，保證了工程安全，達到了預期的目的。
  16. In the second part, we introduce the advantages of soi devices together with their corresponding mechanisms : free of latch - up effect, low parasitic capacitance, easy to form shallow junctions and so on

    論文的第二部分介紹了soi器件的優點:無latch - up效應，較低的源漏寄生電容以很容易形成淺結等，並對具體的機理作出了相應的解釋。
  17. The source drain extension ( sde ) structure and its reliability are thoroughly studied. first, it is shown that the sde structure can suppress short channel effect effectively and the parasitic resistance at the sde region has an effect on performance. it is proposed that increasing the dose condition in the sde region can reduce the parasitic resistance and should be adopted to achieve high performance for deep submicron devices

    本文對深亞微米源漏擴展mos器件結構及其可靠性進行了深入研究，首先通過模擬驗證了源漏擴展（ sde ）結構對短溝道效應的抑制， sde區寄生電阻對器件性能的影響以及sde區摻雜濃度的提高對器件性能的改善，指出了器件尺寸進一步減小后，提高源漏擴展區摻雜濃度的必要性。
  18. Oxygen atoms in the air are known to actively react with the fresh gaas. it was observed that the ga - o bond is stronger than that of as - o and that ga atoms preferentially migrate towards the surface leaving vacancies behind in the subsurface region. this behavior can convert the subsurface layer into an as - enriched one

    本文分析了硫鈍化后源漏飽和電流減小的原因，認為gaas表面極易被空氣中的氧原子氧化，由於ga - o鍵比as - o鍵結合的更緊， ga原子優先向表面移動，這導致亞表面層成為富as層。
  19. Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research

    本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化硅的制備方法和測試方法;第五章介紹了多晶硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。
  20. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
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