溫度陡度 的英文怎麼說
中文拼音 [wēndùdǒudù]
溫度陡度
英文
temperature gradient-
Article 6 where the building lot for a building and connected facilities in a hot spring area is subject to restriction in regard to the gradient of slope of land on which building development is not permitted, the city / county ( municipal ) government with due jurisdiction shall consider the particular characteristics of the hot spring area ? s development in setting other criteria for review in accordance with the proviso to article 262, paragraph 3 of the building design and construction section of the building technical regulations
溫泉區建築物及相關設施之建築基地，受山坡地坡度陡峭不得開發建築之限制者，直轄市、縣（市）政府應考量溫泉區發展特性，依建築技術規則建築設計施工編第二百六十二條第三項但書規定，另定規定審查。The studies of circulation in ecs were most based on the analysis of temperature and salinity data and diagnostic mode. aim at breaking this limitation, we had established a quasi - predictive model in the ecs by reconstructing the pom model to overcome the difficulties brought to the simulations by steep terrain and great density gradient in the new model, the monthly mean sst data in the ecs and the result of global ocean model were used as the boundary conditions to simulate the distribution of the temperature and the circulation structure in the ecs
針對以往溫、鹽資料分析和模式診斷方法為主的東中國海環流研究的局限性，通過改造pom模式，克服因陡峭地形和大密度梯度給模擬帶來的困難，建立了東中國海環流準預報模式，運用本文第三章獲得的sst資料和全球大區模式的結果作為模式的邊界條件，模擬了東中國海溫度分佈與環流結構。Breakthrough curves of ethylene were all steep, and moved backwards gradually along with the increase of operation pressure. and the adsorption balance isotherms of ethylene could be fitted by langmuir equation
發現乙烯穿透曲線陡峭程度均很大，並隨壓力的增加而不斷后移：其吸附等溫線屬優惠型並用langmuir方程進行了擬合。After optimizing the epitaixal condition, low temperature bonding, splitting and removing of porous silicon, soi material has been successfully fabricated for the first time in china with the epitaxial layer transfer of porous silicon ( eltran ) the eltran - soi has been characterized and the results indicate that the top si layer is perfect single crystal, and its thickness is uniform
優化了外延條件，結合低溫鍵合與多孔硅的剝離技術，在國內首次用多孔硅外延層轉移技術成功地制備出了soi材料。分析表明， eltran - soi的頂層硅厚度均勻，單晶質量優良；界面清晰、陡直；電學特性優異。Some factors influencing the grain growth were studied in detail using mc technique. the mc simulation of grain growth can provide not only grain growth kinetics but also detailed information on temporal grain morphology evolution. furthermore, mc technique can easily simulate the " thermal pin " phenomenal caused by steep temperature gradient near the weld interface
採用mc模擬技術，不僅能夠模擬焊接haz奧氏體晶粒長大的動力學過程，而且能夠逼真地模擬奧氏體晶粒微觀形貌的變化，更重要的是它可以很好地模擬焊接haz存在的陡峭的溫度梯度對奧氏體晶粒長大的影響。分享友人