漏區摻雜 的英文怎麼說
中文拼音 [lóuqūchānzá]
漏區摻雜
英文
ldd-
The source drain extension ( sde ) structure and its reliability are thoroughly studied. first, it is shown that the sde structure can suppress short channel effect effectively and the parasitic resistance at the sde region has an effect on performance. it is proposed that increasing the dose condition in the sde region can reduce the parasitic resistance and should be adopted to achieve high performance for deep submicron devices
本文對深亞微米源漏擴展mos器件結構及其可靠性進行了深入研究,首先通過模擬驗證了源漏擴展( sde )結構對短溝道效應的抑制, sde區寄生電阻對器件性能的影響以及sde區摻雜濃度的提高對器件性能的改善,指出了器件尺寸進一步減小后,提高源漏擴展區摻雜濃度的必要性。
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