漏源電壓 的英文怎麼說

中文拼音 [lóuyuándiànyā]
漏源電壓 英文
drain source voltage
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 電壓 : voltage; electric tension; electric voltage
  1. Energy consume, electric strength, insulation resistance, ground conductivity, leakage current, microwave leakage, power input, normal temperature, humidity treatment, glow wire, horizontal flame, vertical flame, tracking, ball pressure, rainproof, water splash, dustproof, salt fog, endurance, motor load test, cord flexing, cord pulling, pull & torque test, lamp replacement, construction check etc

    能耗、電氣強度、絕緣電阻、接地連續性、泄漏電流、微波泄漏、功率、溫升、濕熱試驗、灼熱絲、水平燃燒、垂直燃燒、漏電起痕、球壓試驗、防雨淋、防濺水、粉塵、鹽霧、耐久性（壽命）試驗、電機負載試驗、電源線彎折、電源線提拉、拉扭力測試、燈頭互換性、安全結構檢查等。
  2. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  3. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  4. In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed

    本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。
  5. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  6. Msl power source produced by us, is able to control two high voltage transformer in a order, and can stop power supply when meet trouble at starting or meet abnormal extinguishment. thus, microwave leakage can be controled

    我們做的微波硫燈電源能夠控制兩臺高壓變壓器先後啟動，能夠在微波硫燈啟動異常和突然熄滅的時候自動斷電，從而有效地控制了微波泄漏。
  7. In chapter 4, considering the features of high voltage transformer and the difficulties to make it, a reasonable design scheme with src was proposed, which efficiently reduced negative influence of distributing parameters of transformer on switching power supply and could completely utilize leakage inductance as resonant inductance

    第四章中分析了高頻高壓變壓器的特點及難點，提出了合理的串聯諧振變換器的設計方案，能夠完全利用變壓器的漏感作為諧振電感，有效地降低了分佈參數給高壓大功率開關電源所帶來的不利影響。
  8. High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix. gettering procedures can reduce metal contamination

    由於金屬雜質原子擴散並沉積在器件的有源區，會造成諸如：反向漏電流較大，反向擊穿電壓是軟擊穿等有害的影響。
  9. Based on this method, design the system oil circuit and constant - pressure hydraulic power station as well as the hydraulic manifold block, measuring platform, electrical cabinet and reclaiming oil tank

    在此油源方案的基礎上，設計出測量系統油路、油源泵站系統，同時進行了液壓集成塊、測量臺架、電氣控制櫃和漏油回收油箱的設計。
  10. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為，在甚低溫（ 0 . 236k ）下，通過實驗研究表面聲波的頻率和功率，源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系，以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
  11. By compared with the simulation results and the experiment results, we come to the conclusions that : ( 1 ) circuit with assistant network can widen soft - switching extent in lagging arm, reduces duty - cycle loss on the secondary, diminishes switching dissipation of inverter spot - welding power source. ( 2 ) the range of resonant capacitor, the important factor to soft - switching process, not only affects zero - voltage turn - off of power switches, but also affects the range of zero - voltage turn - on of power switches. so resonant capacitors must be considered according to many aspects ; ( 3 ) it easily fulfils soft - switching condition in lagging arm as leakage inductance of power transformer increases, but bigger leakage inductance of power transformer increases opening dissipation of transformer and decreases efficiency of soft - switching inverter power source

    通過模擬結果與軟開關點焊逆變器試驗結果的對比分析，得到了如下主要結論：採用輔助網路可以完全拓寬全橋軟開關逆變器的滯后橋臂軟開關范圍，減小了次級占空比丟失，降低了逆變電阻點焊電源的開關損耗；諧振電容是影響軟開關工作狀態的重要因素，其大小不僅影響開關管的零電壓關斷，同時也影響開關管的零電壓開通范圍，因此，諧振電容應該綜合考慮；功率變壓器漏感越大，越容易滿足滯后橋臂的軟開關條件，但是大的漏感也使變壓器的通態損耗增加，降低了軟開關逆變器的效率。
  12. The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3

    詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。
  13. In this paper, the working principle of the interleaving two - transistor forward converter is analyzed in detail, and the waveforms of the switch drain - to - source voltage and transformer magnetizing current are researched in different duty cycle conditions. the simulation model is constructed and the simulation results verify the analysis

    本文分析了交錯並聯雙管正激變換器的工作原理，研究了在不同占空比條件下開關管的漏源電壓和變壓器勵磁電流波形，建立了模擬模型，模擬結果證明理論分析的正確性。
  14. Small signal jfets work very well as low - leakage diodes by connecting drain & source together in log current - to - voltage converters and low leakage input protection

    在對數電流-電壓轉換器和低漏電流輸入保護電路中，通過連接小信號jfets的漏極和源極，可以使之作為低漏電流二極體很好的使用。
  15. For low distortion, the drains ( or collectors ) of a differential amp " s front - end should be bootstrapped to the source ( or emitter ) so that the voltages on the part are not modulated by the input signal

    為了得到低失真，差分放大器前端的漏極（或集電極）應該被引導到源極（或射極） ，這樣埠電壓就不會被輸入信號調制了。
  16. Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit, series mode micro - switch with cantilever structure is similar to an fet, when voltage is applied on gate, and the fet will be turned on between source and drain

    有靜電電壓作用在梁和底面電極時，梁發生偏轉，在源極和漏極之間實現導通，常用於自控和通信系統的信號通路空氣橋旁路開關主要用於微波段信號的通路。
  17. After the host computer sends the broadcast command to order measurement operation, all slave devices will start to sample the input signals synchronously. when the sampling operation has finished, devices installed on the capacitive equipments will calculate the phase angle difference ( oi ) between leakage current and the reference voltage signal, and devices installed on pt will calculate the phase angle difference between secondary voltage and the reference voltage signal ( ou )

    我們把一個50hz的交流基準電源引到每臺下位機內，主機發布一個廣播命令要求pt和電容型設備上的監測裝置同時采樣，電容型監測裝置計算出泄漏電流和基準源之間的相位差_ （ oi ） ， pt上的裝置計算出二次電壓與基準源之間的相位差_ （ ou ） 。
  18. During the course of modeling ldmos, the paper puts forward the method in which maxwell function in the static system is applied in analysis compute of ldmos threshold voltage. schwarz - chritoffel transformation method is used to solve the gate self - capacitance with limited size. at the same time, it also provides the method which computes the drain and source self - capacitance by conformal transformation and the equivalent - voltage sharing - charge model

    在對ldmos的建模過程中，本文提出了將靜電系統中麥克斯韋方程用於ldmos閾值電壓的分析計算的方法，引入了許瓦茲-克利斯多菲變換來求解了有限尺寸的柵自電容，並提出了用保角變換和等電壓電荷共享模型來計算漏與源的自電容的方法。
  19. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載流子退化所引入的界面態，根據其沿溝道非均勻分佈的模型，採用準二維分析方法對退化后器件的漏源電流、閾值電壓和飽和區溝道電場作了詳細的理論推導，並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
  20. Ti ? a supply voltage used to terminate a bus ( most commonly used in open - drain devices ) and in generating a reference voltage for differential inputs

    電源電壓用於定位總線（的電壓） （最常用的是開漏器件） ，為不同的輸入端提供參考（初始）電壓。
分享友人
分享到 Line

分享到臉書