漏電現象 的英文怎麼說

中文拼音 [lóudiànxiànxiàng]
漏電現象 英文
leaky
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 現 : Ⅰ名詞1 （現在; 此刻） present; now; current; existing 2 （現款） cash; ready money Ⅱ副詞（臨時; ...
  • 漏電 : leakage of electricity; leakage漏電保護 earth leakage protection; 漏電保護開關 earth leakage circ...
  • 現象 : appearance （of things）; phenomenon
  1. In this thesis, summarized the basic theories of fourier transformation and the fast fourier transformation that are generally adopted to detect and analyze the electric power harmonic in the electric power supply system. at the same time, summarized the even sample principle, the phenomenon of frequency mix, the window functions and the frequency leaking as so on, those are closely - related to sample from figure signal

    簡要闡述了電力系統諧波檢測分析所普遍採用的傅利葉變換和快速傅利葉變換的基本理論以及與數字信號采樣密切相關的均勻抽樣定理、頻譜混疊現象、窗函數和頻譜泄漏等的基本理論。
  2. Summarized no - line loads and the present situations of the electric power harmonic pollution in the guangyuan district ' s electric power supply system ; explained the theories of fourier transformation and the fast fourier transformation those are widely adopted by majority scholars to examine and analyze the electric power harmonic in the electric power supply system. summarized the principle of even sample, the frequency mix phenomenon, the window functions and the frequency leaking as so on, those are closely - related to the figure signal

    簡要闡述了電力系統諧波檢測分析所普遍採用的傅利葉變換和快速傅利葉變換的基本理論，簡要闡明了與數字信號采樣密切相關的均勻抽樣定理、頻譜混疊現象、窗函數和頻譜泄漏等的基本理論，同時闡述了電力系統的諧波檢測與分析的相關理論基礎知識。
  3. While checking 《 anshun government record 》, based on the copy written in 1986 and another two copys written in xian feng 、 guang xu and a series of historical articles including many great books, i try my best to avoid making mistakes about words, sentences and pragraphs

    摘要點校本《安順府志》以1986年電光掃描謄寫本為藍本，以咸豐、光緒兩個版本和歷代文獻、地方志書、大型工具書為校改的依據，多次核對原著，避免了錯字、漏字、脫句、落段等現象。
  4. We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on

    本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。
  5. Apart from lightning, perhaps no manifestation of weather is as frightening as the sight of a tornado or waterspout, a slender twisting funnel cloud that snakes its way to the ground or sea surface

    除了雷電之外，可能沒有一種天氣現象會像目睹卷風或水卷那樣令人恐慌。卷風或水卷是一股瘦長及旋轉中的漏斗雲，迂迴地廷伸至陸地上或海面上。
  6. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
  7. High leakage currents and low - frequency dielectric relaxation were found in as - deposited capacitors after they had been post - annealed in nitrogen at 550 and subsequently annealed in oxygen at 350. the mechanism of this phenomenon was discussed

    經過高溫550氮氣退火處理后，再放入350的氧氣中退火，發現其介電特性出現了非常明顯的低頻弛豫現象，並且伴隨著漏電特徵的惡化。
  8. There shall be no such details as discoloration or electrolyte leakage or 0 voltage

    沒有類似變色、污點、電解液泄漏和零伏現象。
  9. It is found that after stressed by surges the varistors show a decrease in both break - down voltage and nonlinear exponent, and an increase in leakage current

    實驗結果顯示，氧化鋅變阻器受突波侵襲后，會生成崩潰電壓降低，非歐姆指數值減小，以及漏電流增加等劣化現象。
  10. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  11. Due to the charge sharing and charge leakage phenomena in the traditional charge - pump, a new charge - pump with current control technique is designed in this thesis. in the circuit design, a simple positive feedback is employed to expedite the switching speed. the simulation results show that the charge sharing and charge leakage phenomena can be effectively prohibited in the proposed charge - pump

    2 .針對傳統電荷泵中存在電荷泄漏和電荷共享現象，設計出了一種採用電流控制技術的新型電荷泵，電路中巧妙地運用了一個簡單的正反饋，以加快開關速度，模擬結果表明，所設計的電荷泵能有效的抑制了電荷泄漏和電荷共享現象。
  12. The study shows that interface state charges not only increase the threshold voltage, but also lower the mosfet transconductance, drain current and field - effect mobility, which can well explain the results of experiment

    分析結果顯示界面態電荷不僅使閾值電壓增大，而且還會導致器件漏電流減小，跨導和場效應遷移率降低，模擬結果能對實驗現象做出很好的解釋。
  13. Check the operating condition of electric draw stem and electricity parts. check the electric hydraulic parts and pipe joints

    定期檢查電動推桿及電氣部分的運行情況，電液部分的運行情況及管接頭處是否有泄漏現象。
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