濺射沉積 的英文怎麼說

中文拼音 [jiànshèchénjī]
濺射沉積 英文
aln
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 沉積 : [地] deposit; sedimentation; deposition; precipitation
  1. The dry plating method is a method for deposition of a metal on the surface of polymer material under vacuum and includes sputtering method, vapor deposition, vacuum deposition, etc

    干鍍是一種在真空下在聚合物表面沉積金屬的方法，包括濺射、氣相沉積、真空沉積等。
  2. Copper has been deposited on surface of the al mmcs as interlayer by magnetron sputtering, tlp bonding of al mmcs with these interlays, the joints shear strength of tlp bonding using deposited film was as much as the joint shear strength of tlp bonding using cu foil. removing the oxidation on the surface before deposition, copper was coated by magnetron sputtering as tlp bonding interlayer

    待連接表面通過磁控濺射法沉積銅膜作為中間層進行瞬間液相連接，得到的接頭強度與銅箔中間層進行瞬間液相連接得到的接頭強度相當，而使用磁控濺射法去除待連接表面氧化膜后沉積銅膜作為中間層進行瞬間液相連接的接頭強度提高7 . 6左右。
  3. The bilayer manganite film la2 - 2xsr1 + 2xmn207 ( x = 0. 32 ) were successfully prepared by pulsed laser deposition ( pld ) method

    我們採用脈沖激光濺射沉積（ pld ）方法來制備雙層薄膜。
  4. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  5. The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause

    對于tbco非晶垂直磁化膜而言，具有非球對稱電荷分佈的非s態離子tb與濺射沉積薄膜過程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶薄膜垂直磁各向異性的主要部分， tbco薄膜內的磁偶極相互作用構成了其次要部分。
  6. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  7. The influence of depositing condition on the depositing rate and the structure of the films were studied by the aid of tem and xrd. when the temperature ( ts < 450, ta < 800 ) is low, the structure of the samples is still amorphous. the majority content of the sample is sio 90 by the aid of xps

    利用雙離子束濺射沉積技術，通過共濺射方法制備了si - sio _ 2薄膜，研究了沉積時間、工作氣壓p _ （ ar ） 、基片溫度等對沉積速率的影響，用tem和xrd分析了樣品的結構。
  8. In order to find a new way to prepare antibacterial fibers, photocatalytic oxidation of titanium dioxide ( tio2 ) has been used to modify the surface property of polymers in our experiment. tio2 films are deposited on polyethylene terephthalate ( pet ) substrates by means of rf magnetron sputtering using pure ti ( 99. 99 % ) as the target and ar mixed with o2 as reactive gas

    本文利用磁控反應濺射技術，以高純度鈦（ ti ）為靶材，氧氣為活性氣體，在pet基底上反應濺射沉積tio _ 2 ，將納米tio _ 2的光催化氧化特性應用於高聚物表面改性，為進一步開發抗菌織物打下基礎。首次在高分子pet基底上濺射沉積了氧化鈦薄膜。
  9. In the first step, effect of the target ' s components on properties of thin films was investigated. influences of tl2o partial pressure and thallination temperature on the component phases and properties of tl2ba2cacu2o8 hts thin films were studied in the second step of ex situ post annealing treatments

    在濺射沉積前驅物薄膜的過程中，研究了靶材成分對薄膜性能的影響；鉈化后處理過程中，研究了tl2o分壓和鉈化溫度對tl2ba2cacu2o8高溫超導薄膜相組成及其性能的影響。
  10. Therefore, the diagnostics of electrical and optical characteristic of plasma form the basic respects of plasma diagnostics. the author reports in detail in the dissertation the experimental investigation on the phenomena of some common discharge systems at typical operation status such as dc glow ; rf ( radio frequency ) glow and microwave ecr ( electron cyclotron resonance ) discharge

    創新之處： （ 1 ）提出了雙原子分子轉動分辨發射光譜的擬合方法，並利用擬合方法進行了氮氣直流輝光放電產生的第一負帶轉動分辨光譜和磁控濺射沉積cnx膜過程中cn基團的振動帶的轉動線型擬合，獲得了相應的轉動溫度。
  11. By means of x - ray diffractometry, it is found the fluorocarbon films are amorphous

    X - ray衍射儀對濺射沉積膜的結構進行了研究結果表明cf膜是無定型的。
  12. The molecular structure of the sputtered titanium oxide films were investigated by xps and x - ray diffraction. it was found that the ratio of ti / o increases when pressure increases, and there is a optimum ratio of ar / o2 for the sake of obtaining more tio2 on pet surface

    利用x射線衍射法（ x - ray ）對濺射沉積膜的表面物相結構進行了研究，發現在本實驗室條件下濺射生成的膜均是無定型結構。
  13. Hysteresis in aluminum oxides films growth with pulsed reactive sputtering

    鋁靶脈沖反應濺射沉積氧化鋁薄膜中的遲滯回線的研究
  14. Crystal structure and metal - insulator transition properties of dc magnetron sputtered la0. 825sr0. 175mno3 films

    直流磁控濺射沉積錳酸鍶鑭薄膜的結構與相變特性研究
  15. Helium - charged al films are prepared by direct current ( dc ) magnetron sputtering with a he / ar mixture

    摘要採用氦氬混合氣氛下直流磁控濺射沉積方法制備含有氦原子的金屬鋁膜。
  16. This thesis detailedly discussed die preparation of zrn films with microware - ecr plasma enhanced magnetron sputtering deposition ( mw - ecrpemsd ) technology

    本文探討了制備zrn薄膜的微波- ecr等離子體增強非平衡磁控濺射沉積工藝。
  17. Sic films are synthesized using two technologies of pulse laser deposition ( pld ) and chemical vapor deposition ( cvd ) and the characteristics of sic films are analysized in this paper

    本工作採用激光濺射沉積（ pld ）和激光輔助熱絲化學氣相沉積（ hfcvd ）兩種實驗技術制備了sic薄膜，並對薄膜特性進行了研究。
  18. Three kinds of different methods, namely anode oxidation, micro - arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film

    本文分別採用陽極氧化法、微弧氧化法和磁控反應濺射沉積氮化鋁薄膜的方法對功率電子器件用金屬鋁基板表面進行絕緣化處理。
  19. And the transition layer ti between tio2 and tin can improve the transmittance of tio2 / tin. in triple layers the exterior tio2 can increase the transmittance of tio2 / tin / tio2, so do the transition layer ti film between tio2 and tin. after treated at 300 c tio2 / tin / tio2 has no difference with non - heat - treated triple layers, and when treated at 400 c the transmittance of the films increase and the curve shift to the red

    結果顯示，在tio _ 2 tin多層膜中， tin濺射沉積時間較短時，薄膜在紫外?可見光范圍內呈現出較高的透過率；隨著tin薄膜濺射時間的增長，透過率武漢理工大學碩士學位論文逐漸降低;在tio :與tin之間鍍制一層ti膜過渡層可以提高雙層薄膜ti02ztin的可見光透過率。
  20. The composition and structure of the films synthesized by mw - ecrpemsd technology were examined by electron probe, edx, afm, xrd, sem, moreover the corrosion resistance of films were detected by anodic polarization. furthermore, the wear resistance of films was tested by frictional wear. the relationship between properties of films and mw - ecrpemsd technology was summarized

    對微波- ecr等離子體增強非平衡磁控濺射沉積工藝制備的薄膜，採用電子探針、 edx 、 aex 、 xrd 、 sem進行成分及微觀結構分析；利用陽極極化測試了薄膜的耐蝕性能；通過摩擦磨損實驗測試了薄膜的耐磨性能；總結了薄膜的特性與制備工藝的關系。
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