熱致擊穿 的英文怎麼說

中文拼音 [zhìchuān]
熱致擊穿 英文
thermorunaway
  • : Ⅰ動詞1 (給與;向對方表示禮節、情意等) deliver; send; extend 2 (集中於某個方面) devote (one s ...
  • 穿 : Ⅰ動詞1 (破; 透) pierce through; penetrate 2 (通過孔、隙、空地等) pass through; cross; go thro...
  1. The electron - trapping breakdown is the main reason accelerating the thermal breakdown, and the thermal breakdown is the fundamentality factor of the breakdown of pcss

    電子俘獲穿機制是導穿的主要原因,而穿是導開關徹底失效的根本因素。
  2. The impact broke open a heat panel on the wing, which allowed superheated gases to get inside the structure as columbia soared through the skies for landing 16 days later

    一塊泡沫穿了機翼的隔板,使得氣流進入機體內部,導哥倫比亞號在發射升空之後不久,在德克薩斯州上空解體。
  3. Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical

    通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣子表面閃絡電弧的發展過程的試驗結果進行理論分析得出:弧根周圍空氣的電離導了電弧的發展,靜電場力對電弧的發展起到了加速作用,電穿僅發生在閃絡最終的跳躍階段;通過測量閃絡過程中的放電電壓、泄漏電流、閃絡時間、覆冰水電導率、電弧長度及電弧半徑等參數,得到了不同階段電弧(電弧起弧階段、電弧發展階段及完全閃絡)的發展速度、臨界電弧長度均隨覆冰水電導率的增加而減小。
  4. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的電子在超薄柵氧化層中產生陷阱中心,然後空穴陷入陷阱導超薄柵氧穿
  5. Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress

    與通常的fn應力實驗相比較,載流子導的超薄柵氧化層穿顯示了不同的穿特性。
  6. This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides

    首次提出了超薄柵氧化層的經時穿是由電子和空穴共同作用導的新觀點。
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