特徵尺寸 的英文怎麼說

中文拼音 [tèzhǐchǐcùn]
特徵尺寸 英文
characteristic dimension
  • 特 : Ⅰ形容詞（特殊; 超出一般） particular; special; exceptional; unusual Ⅱ副詞1 （特別） especially; v...
  • 徵 : 名詞[音樂] （古代五音之一 相當于簡譜的「5」） a note of the ancient chinese five tone scale corre...
  • 尺 : 尺名詞[音樂] （中國民族音樂音階上的一級 樂譜上用做記音符號 參看「工尺」） a note of the scale in ...
  • 寸 : Ⅰ量詞（長度單位） cun a unit of length （=1/3 decimetre）Ⅱ形容詞（極短或極小） very little; very ...
  • 特徵 : characteristic; feature; properties; aspect; trait
  1. Following the enhancement of process technology, the feature size of device becomes smaller, which make the density of flash memory and at the same time performance improved

    隨著工藝水平的不斷提高，器件特徵尺寸不斷減小，從而使得flashmemory在容量不斷增大的同時性能也在不斷的改善。
  2. This paper summarizes the present situation of modern microelectronic device is. with integrated degree of circuits increasing, and the characteristic sizes of technics minishing as well as the device sizes turning into sub - micron and deep sub - micron, there are many problems

    概述了現代微電子器件發展的現狀，電路集成度的不斷提高，加工工藝特徵尺寸的不斷減小，器件尺寸進入了亞微米、深亞微米階段，出現了許多不良效應。
  3. An automatic flip chip bonder is a precision instrument used to align and bond one or more dies onto a substrate in semiconductor industry. it develops for the mass production of ic, mems and moems with small feature sizes and high precise bonding demands. an alignment system is one of the key components in flip chip bonders

    全自動倒裝貼片機（ flipchipbonder ）是半導體生產工藝中完成晶元和基底對準、鍵合的高精度自動化設備，適合於特徵尺寸小，鍵合精度要求高的ic （ integratedcircuit ） 、 mems （ microelectromechanicalsystem ） 、 moems （ microopticalelectromechanicalsystems ）等的大規模生產。
  4. The submicron ring, laser beam shaper and fresnel lens is fabricated by ion etching according to the selected parameter

    依照這些參數刻蝕出了高質量的特徵尺寸為亞微米的環、光束整形元件和菲涅耳透鏡等元件。
  5. Interconnection dimensions become the limitation for new performance design while the size traditional transistor has met the demand of challenge. thus, the study of interconnection delay becomes more important for current circuit design and technology

    為了提高ulsi的頻率特性，按比例縮小晶體管的特徵尺寸的努力受到了互連線本徵特性和寄生效應的限制，互連線的rc延遲成為ulsi進一步提高頻率特性的瓶頸。
  6. Department of computer science, university of science and technology of china, hefei 230027, p. r. china - 1mm

    隨著集成電路工藝的發展，特徵尺寸不斷縮小，相鄰金屬導線間的耦合日益顯著。
  7. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  8. The technique core of the 3 - d outline tracking scan lies in the adoption of several photoelectric sensors, laser measuring sensors and super voice wave measuring sensors to carry on probing, the single chip makes the photoelectric signal examined as the control basis, and controls the step motor to drive measurement machines and probing sensors to make outline tracking and scans movement along high and breadth direction of the vehicle, and record its outline track, and the data measured is delivered to the computer, finally, acquires the size of the vehicle checked through the place of computer data processing

    三維輪廓跟蹤掃描技術的核心在於採用多套光電傳感器、激光測距傳感器、超聲波測距傳感器進行探測，單片機把檢測到的光電信號作為控制依據，控制步進電機驅動測量機及探測傳感器在車長、車高和車寬方向上作輪廓跟蹤掃描進給運動，記錄其輪廓軌跡，並把測得的數據傳送到上位機，經上位機數據處理獲得被檢車輛的特徵尺寸。
  9. Crankshaft dimension calculation module ' s development of reciprocating pump

    往復泵曲軸特徵尺寸計算模塊開發
  10. The subwavelength optical elements with features smaller than the wavelength of the incident illumination do not give rise to diffraction other than the zeroth orders in the substrate and incident medium

    亞波長光學元件的特徵尺寸小於入射光波波長，特點是僅有零級反射波和透射波存在。
  11. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  12. Because the feature size of subwavelength diffractive microlens is smaller than the incident wavelength, scalar diffractive theory cannot be used to the analysis. it also precludes rigorous vector coupled - wave theory for its finite and aperiod structure

    由於亞波長衍射微透鏡的特徵尺寸小於入射波長，因此不能採用標量衍射理論來分析，又由於它是有限非周期的結構，嚴格的耦合波方法對它也不適用。
  13. Micro electro mechanical systems, mems, is a class of systems that are physically small, with dimensions in the micron ( 10 - 6meters / micron ) range. these systems have both electrical and mechanical components

    微電子機械繫統是由特徵尺寸在亞微米至毫米范圍內的電子和機械元件組成的微器件或微系統。
  14. When feature size comes to 0. 35 m, interconnect delay has contributed 70 % to total delay. distribution of delay parameters lies on actual implementation of layout, which results in the fact that timing closure has become the chief problem. so synthesis technology must be based on timing to insure timing closure

    特徵尺寸進入0 . 35 m后，互連線延遲佔到系統延遲的70以上，而延遲參數的分佈又取決于版圖的具體實現，導致時序收斂成為設計的首要問題，因此綜合技術必須要基於時序，保證時序收斂。
  15. The periodic 30 percent reduction in minimum feature size is probably now going to occur every three years instead of every two

    晶片電路的最小特徵尺寸將每三年縮小30 % ，以前是每兩年。
  16. Stanley williams is an hp senior fellow at hewlett - packard laboratories and founding director of the hp quantum science research ( qsr ) group, with more than 50 scientists and engineers working in areas of fundamental physical sciences

    近年來，隨著特徵尺寸持續減小至納米范圍，量子物理學日漸重要，該小組為惠普提供了大量領先於電子學、光學、機械器件領域的挑戰和機會。
  17. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century. this technology builds on conventional optical lithography experience and infrastructure, uses 11 - to 14 - nm photon illumination, and is expected to support multiple technology generation from 65 nm to 35 nm

    極紫外投影光刻（ euvl ， extremeultravioletlithography ）技術作為下一代光刻技術中最佳候選技術，建立於可見/紫外光學光刻的諸多關鍵單元技術基礎之上，工作波長為11 14nm ，適用於製造特徵尺寸為65 35nm的數代超大規模集成電路，預計在2006年將成為主流光刻技術。
  18. The phenomenon named " generalized resonance " corresponding to the characteristic dimensions of the antennae and the array has also been found which can only be shifted out of the band by adjusting the characteristic dimensions

    同時發現，對應對稱振子和天線陣的特徵尺寸出現了"廣義諧振"現象，這種現象的消除只能通過改變系統的特徵尺寸來實現。
  19. Opc is considered to be useful in two ways : first it enables smaller features with closer proximities to be printed on the same area ; second, it increases the process latitude, decreases the variations of linewidth across a chip and could potentially enhance yield

    Opc是非常有用的，一方面使用opc ，能在相同的面積上加工出更小的特徵線寬；另一方面，使用opc提高了工藝窗口，降低了整個晶元特徵尺寸的變化，潛在地提高了集成電路的生產成品率。
  20. The project researched in this paper is supported by the science & technology research foundation of anhui province : < on - line inspection and measurement system for special 3d contours >. the target is to design a micro - measurement system to measure the miniature parts and to get the measuring result with precision analysis

    本課題的研究目標是：設計並研製出一套顯微測量系統，完成對微型零件的顯微放大及圖像的採集、處理和測量，並最終給出被測零件特徵尺寸的測量結果，以及對測量結果的數據處理和精度分析。
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