生物特異性柱 的英文怎麼說

中文拼音 [shēngxìngzhù]
生物特異性柱 英文
biospecific column
  • : Ⅰ動詞1 (生育; 生殖) give birth to; bear 2 (出生) be born 3 (生長) grow 4 (生存; 活) live;...
  • : 名詞1 (東西) thing; matter; object 2 (指自己以外的人或與己相對的環境) other people; the outsi...
  • : Ⅰ形容詞(特殊; 超出一般) particular; special; exceptional; unusual Ⅱ副詞1 (特別) especially; v...
  • : 形容詞1 (有分別; 不相同) different 2 (奇異; 特別) strange; unusual; extraordinary 3 (另外的;...
  • : Ⅰ名詞1 (性格) nature; character; disposition 2 (性能; 性質) property; quality 3 (性別) sex ...
  • 生物 : living things; living beings; organisms; bios (pl bioi bioses); biont; thing; life生物材料 biol...
  • 特異性 : distinction
  • 特異 : 1 (特別優異) exceptionally good; excellent; superfine2 (特殊) peculiar; distinctive特異功能 s...
  1. This is so because climbing plants are likely to encounter intensive - changing environmental condition during their growth ( especially change of illumination ). secondly, there is a large proportion ( 30 - 40 % ) of climbing plants which belong to dioecism, and hence a gap between male and female plants on morphology, biological characteristic, economic value and so on. this dissertation focuses on herbaceous climbing plants, perennial or annual species such as dioecious trchosahthes kirilowii maxin and dioscorea opposita thumb, and monoecious luffa cylindrical ( l ) roem, it attempts to discover how climbing plants adapted to various environments and the mechanism of adaptation from aspects of physiological and reproductive ecologies at present, due to overuse of chlorofluorocarbons ( cfcs ), the ozonosphere has become thinner and thinner, and the ultraviolet - b ( uv - b ) radiation has increased considerably

    而攀援植本身是一類理想的植行為態學研究材料:第一,攀緣植由於受攀緣能力和支木資源的限制,在長過程中通常要遇到強烈變化的環境條件(別是光照) ;第二,攀緣植中具有較高比例的雌雄株類型,通常佔地區攀緣植種類的30 40左右,不同別的植在形態學及、經濟價值等方面存在一定的差距,因此,本文以雌雄株攀緣植栝樓( trchosahtheskirilowiimaxim ) (葫蘆科多年草質藤本植)和山藥( dioscoreaoppositathunb ) (薯蕷科薯蕷屬植) 、雌雄同株花攀緣植絲瓜[ luffacylindrical ( l ) roem ] (葫蘆科一年攀緣草本植)為材料,試圖從態學及態學角度揭示攀援植如何適應不同境及其機理。
  2. The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h

    本文根據狀結構存在各向點,並根據半導體理知識,推出光導層光載流子橫向最大擴散長度(該擴散長度與液晶光閥光導層解析度直接相關)與薄膜橫向和縱向電導率關系的表達式為:由於a - si : h在al金屬的誘導作用下在不高於250的溫度下即開始晶化,本文對用金屬al誘導非晶硅晶化制備的nc - si a - si : h薄膜進行研究。
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