生長溫度 的英文怎麼說

中文拼音 [shēngzhǎngwēndù]
生長溫度 英文
growth temperature
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  • 溫度 : [物理學] temperature
  1. E ) with the help of pecvd, we found that high substrate temperature is advantage to the basal plane orientation. higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly

    E ）高溫有利於基面平行於襯底的取向，在高的生長溫度下吸附於襯底表面的沉積粒子能夠迅速遷移到二維核的位置，並使粒子有足夠能量調整位置。
  2. Seed culture conditions of bacillus licheniformis ts - 01 were firstly investigated. the results showed that the optimal growth temperature was 40 c ; the suitable seed culture medium was beef extract soya peptone medium ; the optimal initial ph was 7. 5 ; the optimal seed culture time was 13h ~ 14h

    首先對地衣芽孢桿菌ts - 01的種子培養條件進行了研究，得到的結果為：最適生長溫度為40 ；較適合的種子培養基為牛肉膏大豆蛋白腖培養基；最適初始ph值為7 . 5 ；種齡為13h 14h 。
  3. Pot experiments materials were carried out to determine the cold hardiness of six varieties cultivated popularly in henan, named bainong aikang 58, handan 6172, yumai 49, yumai 54 - 99, yumai 18, yumai 2, under controlled temperature at seedling stage, over - wintering stage, green returned stage and jointing stage for identifying

    摘要以河南省主推品種百農矮抗58 、邯鄲6172 、豫麥49號、豫麥54 - 99系、豫麥18號、豫麥2號6個小麥品種為材料，通過控制各生育時期的生長溫度，分別測定苗期、越冬期、返青期和拔節期各品種的抗寒能力。
  4. Abstract : the affects of crystal absorption for heat radiation on crystal growth, which include : the heat loss of the hot grower, the chara - cteristic of temperature - time of crystal growth, the pattern of fluid flow and the shape of interface, the interface inversion of crystal, the temperature distribution and the thermal stress distribution, are reviewed in this paper

    文摘:本文綜述了晶體對熔體熱輻射吸收對晶體生長的影響，包括對熱腔熱耗散的影響；對晶體生長溫度時間特性的影響；對液流形態和固液界面形狀的影響；對晶體界面反轉的影響；對晶體中溫度分佈和應力分佈的影響。
  5. We studied the factor that influence the quality of gaas, algaas and ingaas by mbe, and studied the growth temperature, growth time and the flux ratio of v - iii beam

    研究了影響mbe生長gaas 、 algaas和ingaas等單晶材料質量的一些因素，對mbe生長溫度、生長時間和生長時的-族束流比進行了研究。
  6. Ammonia played a critical role in the vertical alignment of cnts, and the possible reason was that in 850 the atomic hydrogen decomposed from ammonia reacted with amorphous carbon to form volatile products to keep the metal surface clean, and mechanical leaning against neighboring tu bes established a morphology of vertical alignment

    當基體為單晶硅、催化劑鎳膜厚度為20nm 、氨氣氣氛、生長溫度為850時，得到了定向生長的納米碳管。其原因可能是850時氨氣分解的氫原子和無定形炭生成了易揮發物質，從而保持催化劑的活性使納米碳管依靠相鄰碳管之間的斥力定向生長。
  7. The experiments show : growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced

    實驗表明：生長溫度是一個重要的生長參數，它對外延層的表面形貌、組分、結晶質量、遷移率、載流子濃度有著很大影響。
  8. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  9. The growth temperature was 518 “ c, as probed by a profile thermocouple located inside the reactor

    生長溫度在518c ，由位於反應腔下的熱電耦檢測。
  10. For solution with certain compositons, it behaved as the growing temperature tg. when tg. is too high, the film was hard to grown or did n ' t grow well

    而對于確定r值的熔液，則主要表現為過冷度的選取，也即生長溫度的選取。
  11. Compared to gan, which is one of the most successful wide - band semiconductor materials at present, zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature than gan ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy ( ~ 60mev for zno, 25mev for gan ), which promises strong photoluminescence from bound excitonic emissions at room temperature ; meanwhile, homogeneous bulk zno is available

    和gan相比， zno薄膜具有生長溫度低，激子復合能高（ zno ： 60mev ， gan ： 21 25mev ） ，受激輻射閾值較低，能量轉換效率很高等優點。有可能實現室溫下較強的紫外受激發射，制備出性能較好的探測器、發光二極體和激光二極體等光電子器件。
  12. The ba0. 5sr0. 5tio3 / pt / ti / sio2 / si multilayered heterostructures were successfully prepared. the dielectric properties measurement results show that the dielectric tunability is superior and the relative dielectric constant er varies at a little degree with the frequency, but er is lower for the low - temperature deposited bst thin films, compared with the bst thin films prepared at higher temperature. 6

    Bao . ssr05毛o3薄膜的介電性育瀕四試結果表明鍘氏生長溫度制備的bst薄膜的介電可調諧性能較好，薄膜的介電常數份隨著頻率的變化較小;較高溫度制備的bst薄膜的介電常數較高，但薄膜的介電可調諧勝能更差，而且薄膜的介電常數場隨頻率的變化較大。
  13. Its optimum growth temperature was at 32, and the optimum growth ph was at ph 5

    其最適生長溫度為32 ，最佳生長ph值為5 。
  14. ( 2 ) the cp cells conserved in 10 ? fail to reculture because of apopotosis of cp

    （ 2 ）細胞凋亡是cp細胞在10c保存時間過長導致細胞不能在正常生長溫度下恢復生長的根本原因。
  15. The fwhm of pl at 650c is the narrowest. the variation of pl with excited intensity and temperatures were discussed respectively

    當生長溫度到達680時，光致發光譜變成由兩個峰組成。
  16. The effects of the growth temperature and duration on the growth of aligned carbon nanotube array were studied with the help of sem and tem

    為了優化定向碳納米管陣列的制備，對生長溫度及生長時間進行了研究。
  17. This process is called carbon nanotube - confined reaction. sic grains and solid sic whiskers with the diameter of 120 nm to 160 nm are formed by carbon nanotube - confined reaction. the size of grains and the whisker diameters increase

    採用c納米管限域法所生長的sic晶須則是實心的，直徑達120nm 160nm ，並有sic顆粒生成，生長溫度越高，合成晶須的直徑和顆粒的粒徑越大。
  18. The researching results show that a chemical transport agent introduced into our system can avoid the congruent sublimation condition and help to grow znse crystal under relatively low temperature. this route will reduce the production cost of znse single crystals

    兩種晶體西北工業大學博士學位論文生長實驗證明，輸運劑的引入可以降低znse晶體的氣相生長溫度，避免了znse的氣一固一致升華范圍過窄對znse單晶生長的限制，從而可以簡化工藝，降低成本。
  19. The degree of graphitization and diameter of cnts increased with elevated temperature, which showed that high temperature improved the catalysis of catalyst, and was attributed to uniform arrangement of atomic carbon, and hindered amorphous carbon

    隨著生長溫度的升高，催化劑的活性提高，有利於碳的有序排列，生長的碳納米管直徑增大。氨氣對納米碳管的定向排列影響顯著，而氫氣、氮氣則無影響。
  20. No high - temperature pre - heat - treatment of the si substrate was used to obtain epilayers. the zns epilayer quality was improved with decreasing the substrate temperature. the small x - ray diffraction fwhm was obtained at 300, which implied that the zns epilayers had higher quality

    隨著生長溫度的降低， zns單晶薄膜質量提高，由在300時得到較小x -射線衍射fwhm的結果表明獲得了結晶質量較高的zns單晶薄膜。
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