相參脈沖技術 的英文怎麼說

中文拼音 [xiāngshēnmàichōngjìshù]
相參脈沖技術 英文
coherence technique
  • 相 : 相Ⅰ名詞1 （相貌; 外貌） looks; appearance 2 （坐、立等的姿態） bearing; posture 3 [物理學] （相位...
  • 參 : 參構詞成分。
  • 脈 : 脈名詞1. （動脈和靜脈的統稱） arteries and veins2. （脈搏的簡稱） pulse 3. （像血管的組織; 連貫成系統的東西） vein
  • 技 : 名詞（技能; 本領） skill; ability; trick; technique
  • 術 : 術名詞1. （技藝; 技術; 學術） art; skill; technique 2. （方法; 策略） method; tactics 3. （姓氏） a surname
  1. Backed up by the soplat theory based on particle kinematics, the second chapter of this paper presents with analysis and simulation of several single observer passive measurement models, which uses such relative movement parameters as bearings changing rates and centrifugal acceleration information on the basis of bearings measurements. in the third chapter, the observability of location respectively using bearings and its changing rates information and centrifugal acceleration information is analyzed, and its observable condition is got. the fourth chapter puts forward the modified covariance extended kalman filtering ( mvekf ) against the defect of traditional extended kalman filtering ( ekf ), whose performance is simultaneously compared in the chapter with the performance of ususal tracking algorithm such as ekf, mgekf, iekf by computer simulation

    在近年來提出的基於質點運動學原理的單站無源定位理論基礎上，本文第二章提出了幾種在角度測量的基礎上增加角度變化率及相對運動的離心加速度等運動學參數的單站無源測量模型，並對它們進行了分析和模擬；第三章分別對利用角度及其變化率信息定位和利用離心加速度信息定位的可觀測性進行分析並得到了相應的可觀測條件；第四章針對傳統擴展卡爾曼（ ekf ）方法的缺點，提出了一種修正協方差的擴展卡爾曼濾波（ mvefk ）方法，並將其和ekf 、 mgekf 、 iekf等常用的單站無源定位濾波方法進行了性能模擬比較；第五章通過引入雷達機動目標跟蹤方法和模型，提出了利用角度及其變化率對機動輻射源跟蹤的多級噪聲自適應方法和imm方法；第六章主要對角度變化率和離心加速度參數的獲取技術進行了研究，提出了幾種高精度測量脈沖序列多普勒頻率變化率的方法。
  2. The theoretical part mainly refers to studies of optical parametric chirped pulse amplification. we analyze some basic theories of opcpa, such as phase matching, parametric bandwidth, walk - off in space and time, gain property and so on, and compare the basic properties of bbo, lbo and kdp

    理論部分主要是對新興的光參量啁啾脈沖放大技術的相位匹配、參量范圍、時空走離、增益及帶寬特性等基礎理論進行了分析，並對常用的bbo 、 lbo和kdp基礎特性進行了比較分析，這對于光參量啁啾脈沖放大系統的設計具有一定的實際意義。
  3. Based on the doppler effect and pulse coherence technique, synthetic aperture radar ( sar ) breaks through the azimuth resolution limitation imposed by real aperture antenna. in combination with the pulse compression technique, two - dimensional high resolution imagery to distant targets can be realized

    合成孔徑雷達（ sar ）利用以多普勒頻移理論和脈沖相參為基礎的合成孔徑技術，突破了實孔徑天線對方位向分辨力的限制，與脈沖壓縮技術相結合，實現了遠距離目標的二維高分辨成像。
  4. In order to eliminate the influences caused by temperature, electrode - polarization and autoeciousness - capacitance, the traditional instrument has added complicated circuits so that it cause such shortcomings as big error, time - retardation and a relatively small scope. through the problems caused by 2 - probe electrode and ac current source, a new measuring circuit based on the excitation of bi - directional voltage pulse and the sensor of 4 - probe electrode is proposed, using single - chip to achieve auto - temperature compensation

    作者在參閱國內外大量相關參考文獻的基礎上，從電導測試技術的原理性研究出發，分析了採用交流激勵源、兩電導電極為傳感器的傳統電導測試系統所面臨的種種問題，提出並研製了一種基於雙極性脈沖電壓激勵、以四電導電極為探頭、運用單片機進行溫度自動補償的新型電導率測量系統。
  5. Although there have been many application instances in the field of input / output device technology, we need an specific project and technology route aimed at an given application. in this thesis, we combine the introduction and analysis of relative technology to describe the accomplishment of a coordinate collecting device which is based on incremental rotary encoder. this device is an specific device applied to collect the corrdinate displacement of ground image ’ s three - dimensional model created by full digital photogrammetric station. cpld chip and vhdl are applied in this device to carry out the following work : phase control of the electrical pulse created by incremental rotary encoder, counting the number of electrical pulse, controling the state of signal processing circuit, exchanging data between this circuit and pci control

    本文結合相關技術的介紹和分析，描述了一個基於增量式旋轉編碼器的坐標參量採集介面卡的實現，此介面卡是一種用於採集全數字攝影測量系統地面影像模型坐標位移量的專用設備，該設備採用cpld器件和vhdl語言實現增量式旋轉編碼器的脈沖信號鑒相和計數、信號處理部分的狀態控制以及和pci總線晶元ch365之間的數據交換和通信功能，同時該設備的驅動程序基於wdm模式，並且配置有結構良好的動態鏈接庫程序作為系統軟體和驅動程序之間的數據和控制交互中間介面，能夠方便地運行在windows98 / 2000 / xp操作系統平臺上，具有實時性強、工作穩定、通用性較好和性價比高等特點。
  6. The new requirements for applications in material surface engineering urge a new type of hipib apparatus, for instance, the generation of medium - power - density ion beam, high - stability ion beams and long - lifetime ion source etc. therefore, characterization of high power ion diode - magnetically insulated ion diode ( mid ), the key issue for the technique development, is considered in this dissertation. the investigations of hipib generation and its mechanisms have been carried out in a temp - 6 hipib apparatus, in order to optimize the configuration of ion diode and its ion beam parameters for materials surface treatments

    針對強流脈沖離子束（ hipib ）技術研發的關鍵環節?高功率離子二極體（磁絕緣離子二極體）的工作特性，在temp - 6型hipib裝置上開展了hipib產生及其形成機理的實驗研究，確定了優化的離子二極體結構和輻照工藝參數；通過hipib輻照金屬材料燒蝕行為的系統研究，揭示了燒蝕表面形貌的形成規律，為徹底弄清hipib與材料相互作用機理提供了實驗依據。
  7. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
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