硅光 的英文怎麼說

中文拼音 [guīguāng]
硅光 英文
silicon photovoltatic cell
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  1. In the chapter 4 the characters of the si - electric eye are introduced. then according to the characters, the hardware configuration of the velocity measurement systems is discussed in details

    第四章在說明了硅光電池的特性之後，以其特性為理論根據，較為詳細地論述了測速系統的硬體構成。
  2. Effects of humidity on the sensitivity of si photodiode

    空氣濕度對硅光電二極體響應度的影響
  3. First the author introduces the design of the flame monitoring system based on pic16f877 mcu in details. the detector, ( ecadata company ’ s production ), si - photodiode, is used as the sensor. its photoelectric current output is proportional to input light ’ s energy

    經方案比較，決定選用基於火焰的紅外光譜輻射特性的火焰檢測原理，研製開發火焰監測系統，檢測元件選擇ecadata公司生產的紅外雪崩型硅光電二極體，光電二極體在接受紅外輻射時，其產生光電流的大小與入射光能量成正比。
  4. The apparatus uses 880, 950nm nir led as light source, interference filter as homochromy device, si photronic as detector. digital signal comes from ad transformation, processed by microprocessor system

    以880 、 950nm的近紅外led為光源， 14個窄帶干涉濾光片為單色器，以硅光電池為檢測器，經ad轉換得到數字信號，送單片機處理。
  5. Later, the discovery of all colures photoluminescence and electric - luminescence from porous silicon and the encouraging progress in fabricating porous silicon based light - emitters has cast a new light on si - based opt - electronics

    多孔硅可能彌補單晶硅材料不能有效發光的缺點，預示了用單晶硅制備發光器件進而實現全硅光電子集成的美好前景。
  6. Silicon ( si ) is the leading material of microelectronic devices, but the nature of indirect band gap of si hinders its applications in integrated optoelectronics. to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology

    硅是微電子器件的主要材料，但硅的間接能隙特性嚴重製約了其在光電子領域的應用，如果能在硅基材料的基礎上制備發光材料，就可利用已有成熟的硅集成技術發展硅光電子集成，從而有可能完全改變信息技術的面貌。
  7. In the third chapter, the influence of current density, solution concentration, erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing, and with erosion time and aging time prolonging ; with the increasing of solution concentration, peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1. above phenomena can be explained by quantum confinement and light center model, but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence. at present, radiation mechanism is still one of the primary problems in the study of ps

    在第z三章中；通過對比，分析了電流密度、陽極化時間、溶液濃度以及自i然氧化時間對多孔硅光致發光光譜的影響，認為在一定的范圍內，多i孔硅的發光峰位會隨電流密度的增大而藍移，要獲得較強的發光，需z要選擇合適的電流密度；隨著腐蝕時間的延長，多孔硅的發光峰位會i發生藍移；當f酸的濃度較小q ： 1 ）時，峰位隨濃度的增大表現為向i低能移動；而當f酸的濃度較大河山時，峰位隨濃度的增大則表現z為移向高能；多孔硅在空氣中自然氧化；其發光峰位發生藍移，而強i度隨放置時間的延長而降低。
  8. Crystalline silicon photovoltaic array - on - site measurement of i - v characteristics

    晶體硅光伏pv方陣i - v特性的現場測量
  9. The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature

    本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗
  10. This paper introduces a new method to measure the intensity distribution of single seam diffraction by replacing the silicon photocell and light activated diode with light activated triode

    摘要利用光敏三極體代替硅光電池和光敏二極體來測試單縫和雙縫衍射的光強分佈。
  11. Silicon - light - pipe black ceramics pipe saddle

    硅光管黑瓷管座
  12. Development of cmos devices and circuits with sub - 0. 1 m gate length

    新型高頻硅光電負阻器件的特性模擬及測試分析
  13. Further study on responsibility of si photovoltaic detector

    再論硅光伏探測器的響應度
  14. Crystalline silicon terrestrial photovoltaic modules - design qualification and type approval

    地面用晶體硅光伏組件設計鑒定和定型
  15. Crystalline silicon terrestrial photovoltaic modules - design qualification and type approval iec 61215 : 2005 ; german version en 61215 : 2005

    地面用晶體硅光伏組件.設計鑒定和定型
  16. Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicon photovoltaic devices

    晶體硅光伏器件的i v實測特性的溫度和輻照度修正方法
  17. Visitors can turn the handles of a polycrystalline, a monocrystalline and an amphorous photovoltaic panel to compare their efficiencies

    參觀者可轉動光伏板的手柄來比較單晶硅、多晶硅和非晶硅光伏板的效能。
  18. Pl properties of modified and unmodified ps are - 4 - abstract quite different. the morphology and the surface species of the ps samples were examined

    比較多孔硅光致熒光性能與未修飾時的不同，並對其表面形貌和化學成分進行表徵。
  19. Procedures for temperature and irradiance corrections to measured i - v characteristics of crystalline silicon photovoltaic devices iec 60891 : 1987 a1 : 1992 ; german version en 60891 : 1994

    晶體硅光伏器件實測電流電壓特性的溫度和輻照度修正
  20. Measurement of spatial uniformity of responsivety of silicon diode

    硅光電探測器空間響應均勻性測量的一種新方法
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