硅半導體 的英文怎麼說

中文拼音 [guībàndǎo]
硅半導體 英文
silicon semiconductor
  • : 名詞[化學] silicon (14號元素符號 si)
  • : Ⅰ數詞1 (二分之一) half 2 (在 中間的) in the middle; halfway 3 (比喻很少) very little; the l...
  • : 動詞1. (引導) lead; guide 2. (傳導) transmit; conduct 3. (開導) instruct; teach; give guidance to
  • : 體構詞成分。
  1. Single crystal silicon is the semiconductor material which is used mostly in the present electronic industry, it play a very important role in the field of aviation - astronavigation, optics, electron and micro - electronics

    單晶材料是當代電子工業中應用最多的材料,它在航空航天、光學、電子和微電子等領域發揮著十分重要的作用。
  2. Doped silicon and germanium are technologically the most important types of semiconducting material.

    添加和鍺在工藝上是物質中最重要的類型。
  3. Silicon, naturally occurring in the form of silica and silicates, is the most important semiconductor for the electronics industry.

    在自然界從酸鹽和二氧化形式存在的是電子工業中最重要的原材料。
  4. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    分立器件gp gt和gct級3cg110型pnp小功率晶管.詳細規范
  5. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    分立器件gp gt和gct級3dg130型npn高頻小功率晶管.詳細規范
  6. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    分立器件gp gt和gct級3dg182型npn小功率高反壓晶管.詳細規范
  7. Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method

    工藝材料的試驗.單晶中載流子壽命的測量.用
  8. As silicon is the most important semiconductor material in micro - electronic field, one - dimensional nano - structures of silicon play an important role in the fields of device assembly, nanometer - size magnetic device, photoelectronics, and have drawn wide interest in the world

    摘要作為微電子領域最重要的材料,的一維納米結構在器件組裝、納米尺寸磁性器件、光電子等領域具有重要的作用,已經成為國際上材料科學研究的一個熱點。
  9. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    光電子器件gti6型npn光電晶管詳細規范
  10. The accuracy of the mfc was 3. 8 % fs, and the rotor flow meter ' s was 2 % fs. 2. the measurement of pressure was carried out by using semiconductor silicon piezometer

    ( 2 )壓強的測量採用壓阻式壓強傳感器,通過測量mpt進氣管路的靜壓,結合理論分析計算得到mpt諧振腔的總壓。
  11. The silicon force sensor using bulk silicon process has lots of advantages such as batch producible, low cost, high precision, small driving force, high reliability, low power consuming, small dimension, light weight and quick response, etc. therefore, a scheme is proposed in this paper

    由於微機械工藝採用的技術多是工業的表面工藝和加工工藝,因此這種傳感器可以大批量製造,且具有低成本、高精度、低驅動、高可靠性、低功耗、佔用空間小、重量輕和響應速度快等優點。
  12. Test method for quantifying tungsten silicide semiconductor process films for composition and thickness

    定量分析化鎢加工膜組分和厚度的標準試驗方法
  13. Scr ( silicon controlled rectifier ) or thyrister can also be substituted for the contactor

    也可以用可控整流器或者是閘流管。
  14. A scr ( silicon controlled rectifier ) or thyrister can also be substituted for the contactor

    也可以用可控整流器或者是閘流管。
  15. Abstract : experiments were made on a ultrasonic machining tool with work - piece adhered to ultrasonic transducer head, to machine micro - holes on hard and brittle materials such as soda glass and si, to study the effects of tool materials , work - piece materials , amplitude , machining load , slurry concentration , tool length and the size of work - piece on machining rate and wear ratio. in this experiment, the micro - tool was made through wedg

    文摘:通過以wedg放電加工手段製作微細超聲加工用工具,在採用工件加振方式的微細超聲加工機上對碳酸玻璃、等硬脆材料試件進行微孔加工的實驗,來探討在某一特定加工條件下工具材料、工件材料、工件的振幅、加工靜載荷、磨料懸浮液濃度、工具長度及工件尺寸等重要因素對加工速度、工具損耗率的影響,為微細超聲加工技術的實用化提供參考依據。
  16. Semiconductor discrete device. detail specification for silicon tuning varactor diode for type 2cc51e

    分立器件. 2cc51e型電調變容二極詳細規范
  17. If the silicon - based films have a favorable luminescence properties in visible light, this important semiconductor will be the basic material in the next generation of the electronics

    如果能夠使基材料在可見光范圍內具有良好的發光特性,那麼這種重要的材料則有可能在飛速發展的光電子學中成為下一代電子學革命的基礎材料。
  18. Using this method, the interface characteristics of angle beveled mesa structure high - voltage silicon pn junction protected by organic materials or inorganic passivation films were measured

    採用此方法,測量了臺面型高壓硅半導體器件的無機鈍化和有機保護界面的表面復合速率。
  19. Make great efforts to become the first - choice supplier of rectification devices and silicon semiconductor chip products for electronic manufacturing enterprises both at home and abroad. guided by the need of the market, we need to strengthen business administration, develop the new products, improve the production technology, perfect service system and meet the requirements and demands of the customers

    努力成為國內外電子生產企業首選的整流器件及硅半導體晶元產品供應商,以市場為向,加強企業管理,不斷開發新產品,改進生產工藝,完善服務系,進行持續改進,滿足顧客規定要求及期望。
  20. The temperature sensor based on the absorption properties of an indirect semiconductor

    該傳感器採用單晶硅半導體材料為溫度敏感材料。
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