硅堆 的英文怎麼說

中文拼音 [guīduī]
硅堆 英文
silicon dropper
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 堆 : Ⅰ動詞（堆積） pile up; heap up; stack Ⅱ名詞1 （堆積成的東西） heap; pile; stack 2 （小山 多用於地...
  1. Through the search of bourn of intraclast congeries silica rock, its earth and west side all grow consortium robble

    經對內碎屑堆積硅質巖的邊界研究發現，其東西兩側均發育有同生斷裂。
  2. Ore area locate on, silver factory ditch - ancient tomb ditch in west branch river set lower bench, stratigraphic succession, rock assemblage are different with circumference. most is a set of intraclast congeries silica rock. in search of it, its distribution range in the silver factory ditch - ancient tomb ditch

    礦區所在部位銀廠溝?古墓溝一帶，西岔河組下段地層中，地層層序、巖石組合特徵與周邊地區存在明顯的差異。主要為一套內碎屑堆積的硅質巖。
  3. Further research of lithofacies pvove : lode country output points belongs to tidal - flat facies. and the two sides belong to littoral facies - estuarine facies. ore area petrochemistry analyse also prove : intraclast congeries silica rock in basin have higher cu, ag abundance than circumference pena. the prominence inhomogeneity of the cu distribution indicates reconstruct of the late construction

    礦區內巖石化學測量也證明：盆地內發育的內碎屑堆積硅質巖比周圍巖石具有更高的cu 、 ag元素地球化學豐度值， cu元素分佈的顯著不均一性，表明了後期構造的改造作用。
  4. It is probable that local furrows and wider depressions, caused by buckling of the accumulated silicate layers during tectonic movements.

    可能有局部溝豁以及寬的坳陷，在構造運動過程中由堆積的硅酸鹽層彎曲造成。
  5. The tested inhibitors are listed as follows : alkali matter including lime, silicon - containing fertilizer and coal ash ; organic matter including plant compost, pig manure and humic acid ( ha ) ; ion inhibitor such as znso4 pot experiment, in which lettuce ( lacruca sativa var. augustana irish ) was chosen as the tested plant, involved 27 treatments, 4 replications each

    本研究選用的調控劑有堿性物質石灰、硅肥、粉煤灰，有機物料秸稈堆肥、豬糞、胡敏酸，離子拮抗劑znso _ 4 。按不同類型調控劑的比較、有機物料與石灰的組合效應、石灰不同用量的比較等原則設計試驗。
  6. Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

    熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性
  7. Nuclear criticality safety for fissile materials outside reactor - borosilicate glass raschig rings and its application criteria

    反應堆外易裂變材料的核臨界安全硼硅酸鹽玻璃拉希環及其應用準則
  8. The company mainly produces high - tension and low - tension electric equipment, thyristors electrical machinery soft starter, automatic regulating silicon piles etc. it developed the technology with own patent adopting sun shape heat tube radiators with steam and water separated, and developed the integrated power module unit including thyristors and rectifiers with the technology. the products organization is novel, and it conducts heat rapidly and has solved the difficult problems of heat dissipation in generator excitation and exchange power

    公司主要生產高低壓成套電器低壓動態無功補償裝置晶閘管電機軟啟動自動調壓硅堆等產品。研製開發出了「日」字形汽水分離式熱管散熱，並利用該技術開發了晶閘管整流管一體化功率組件，結構新穎，傳熱迅速，為發電機勵磁交流調功等領域解決了器件散熱難題，產品的各項性能均處于國內外領先水平。
  9. The unstable stacking of layers of org - mmt was easily damaged under force and heat. hence, it is very important to decide the process temperature for preparing the composites, and it was found that 200 was a upper limitation of temperature

    由於在高熱（ 200以上）或強機械剪切作用下，蒙脫土層狀堆疊結構會坍塌，導致不能與聚合物分子作用生成聚合物?層狀硅酸鹽納米復合材料，因此熔融插層的溫度選擇顯得十分重要。
  10. Semiconductor discrete device. detail specification for type 2cl3 silicon high voltage rectifier stack

    半導體分立器件. 2cl3型硅高壓整流堆詳細規范
  11. Other techniques involve huge lumps of machinery, but josephson junctions can be made using the sort of microfabrication technology employed for normal silicon chips

    其他技術都需要一堆巨大的機械裝置，而約瑟夫森結則可以通過運用利用普通硅晶元的微型裝配技術得到。
  12. Ftir and xps proved that ptcda and tcpc were attached on the surface of silicon by covalent ; afm and uv - vis showed ptcda and tcpc arranged orderly on surface of silicon ; through raman spectrum, we found that macrocycle molecules stand on surface of silicon, while macrocycle molecules in film by vacuum deposition parallel to silicon surface

    紅外光譜和光電子能譜證明了?和酞菁成功的化學鍵合到單晶硅表面， afm和uv - vis吸收光譜表明了?和酞菁單層膜在硅基上呈有序排列。拉曼光譜的研究發現?酐分子大環以一定的角度立於硅基表面，而不是平行於基體表面，與蒸鍍手段得到的?酐膜的堆積形態完全不同。
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