硅重晶石 的英文怎麼說
中文拼音 [guīzhòngjīngdàn]
硅重晶石
英文
schoarite- 硅 : 名詞[化學] silicon (14號元素符號 si)
- 重 : 重Ⅰ名詞(重量; 分量) weight Ⅱ動詞(重視) lay [place put] stress on; place value upon; attach im...
- 晶 : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
- 石 : 石量詞(容量單位, 十斗為一石) dan, a unit of dry measure for grain (= l00 sheng)
- 晶石 : spar
-
Method of analysis baryte for export. determinationof silicon dioxide
出口重晶石分析方法.二氧化硅的測定Huangmei has a rich reserve of underground minerals, 15 sorts are proven to have exploitation value, of which, limonite and siderite have a reserve of 58 million tons, the tenor is around 45 %, being concentrated ; quartz is of 100 million tons ; gypsum mine is 270 million tons ; barite is 500, 000 tons and silex of 10 million tons ; porcelain clay, limestone, shale and granite are extensively distributed and of large reserve
黃梅地下礦產豐富,已探明有開采價值的礦產資源15種,其中褐鐵礦、菱鐵礦儲量5800萬噸,品位45 %左右,分佈集中;石英礦1億噸;石膏礦2 . 7億噸;重晶石50萬噸;硅石1000萬噸;瓷土、石灰石、頁巖石、花崗巖分佈廣、儲量大。The fluids upwelled to seafloor along fault thus ore - forming metals accumulated. 2. this paper indicated the definition the hydrothermal sedimentary rocks. the definition is a group of especial sedimentary rocks forming at the temperature ranging from 70 ? to 350 ? ( or more high ) through sedimentation and synsedimentary metasomatism in the seafloor
區內的熱水沉積巖主要有硅質巖、鈉鉀長石巖、重晶石巖、透閃石巖、碳酸鹽巖、綠泥石巖和鐵白雲石斑點千枚巖,它們往往與熱水沉積礦體緊密伴生。The gangue minerals are mostly carbonating minerals, fluorite, barite, celestite and so on ; the rock alteration is slightly silicified, carbonated, baritizated, celestited, which is low - temperature alteration. because of continual downgoing extrusion from india plate to euro - asian plate, there are some thrusting nappe structures in lanping basin related to the orogens on the two sides
礦床中礦石礦物發育典型的中低溫熱液成因的礦物組合,如黝銅礦系列、方鉛礦、黃銅礦等,脈石礦物主要為碳酸鹽類礦物、螢石、重晶石、天青石等;圍巖蝕變主要發育弱硅化、碳酸鹽化、重晶石化、天青石化等低溫蝕變組合。Mica, vemiculite, quartz sand, colored grit, cobble, tourmaline, light calcium carbonate, feldspar, feldspar powder, marble, etc. 1. the series of mica includes muscovite, golden mica, biotite, sericite, used in the fields of electric insulation, heat insulation, paint, plastic, rubber, electric welding, toiletry, etc.
精製石英砂粉,雲母粉碎,輕質碳酸鈣,重鈣粉,蛭石塊粉,以及長石粉,重晶石粉,硅線石,電氣石,鵝卵石,等各種礦產品。Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system
該系統可通過沉積參數的精確控制,以控制沉積過程,減少金剛石膜生長過程中的缺陷,並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程;利用微波對材料的選擇加熱特性,通過構造等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離體化學氣相沉積金剛石的成核與生長研究,系統地研究了在( 100 )單晶硅基片上mpcvd沉積金剛石膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響,分別用raman光譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射光譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。分享友人