硅集成電路 的英文怎麼說

中文拼音 [guījíchéngdiànlù]
硅集成電路 英文
silicon integrated circuit
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 集 : gatherassemblecollect
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 集成 : integration集成晶體管 integrated transistor; 集成元件 integrated component
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  2. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  3. Chemical - mechanical - polishing ( cmp ) has been rapidly developing and finding extensive applications in the integrated circuit ( ic ) manufacturing industry for processing hard disk of computer and silicon wafer with super - smooth and flawless surface

    集成電路（ ic ）製造工業中，化學機械拋光（ chemicalmechanicalpolishing ， cmp ）廣泛應用於計算機硬盤片、硅晶片超光滑無損傷表面的加工。
  4. This paper aims at investigating and realizing an asic cell of high performance instrumentation amplifier based on the standard cmos process, which is employed in the readout circuits of microsilicon sensor as a part of soc

    本文的主要目的是研究並採用標準cmos工藝實現一種高性能的儀表放大器專用集成電路模塊，該模塊專用於電容式微硅傳感器的一種soc模式讀出電路中。
  5. Integrated circuit ( ic ) ： small wafers of silicon etched or printed with extremely small electronic switching circuits ; also called chips

    集成電路：刻有或者印有非常小的電子開關電路的小硅晶片；也稱作chips 。
  6. A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented. the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors. the substrate pn junction can be realized in standard silicon technologies without additional processing steps

    提出了一種新的方法來減小硅襯底損耗提高集成電感的q值：在硅襯底形成間隔的pn結隔離以阻止渦流減少損耗，這種方法工藝簡單且與常規硅集成電路工藝兼容。
  7. Mems optical switch for optical communication is fabrication by silicon surface micromachining technology. surface micromachining technique, based on the standard cmos processes, in the other hand, offers greater flexibility for realizing free - space optical systems on a single chip

    Mems光開關是採用表面微細機械加工技術製作而成，硅表面微機械加工技術是以cmos集成電路工藝為基礎的，它可以靈活地把光開關集成在一塊矽片上。
  8. Porous silicon ( ps ) is a new type silicon - based material developed in recent years, which has different properties compared with the crystalline materials. porous silicon can luminescence efficiently across the whole range from the near infrared, through the visible region, to the near uv region. this characteristic makes it possible to fabricate light - emitting devices and solve the key problem of the optoelectronic integrated circuit ( qeic ), opening up the bright future for the vlic

    多孔硅（ ps ）是近年來發展起來的一種新型硅基材料，具有與單晶硅材料大不相同的特性，例如，多孔硅可在近紅外和可見，甚至近紫外區輻射強烈的熒光，使得它可用來製造發光器件，並可望在解決光電子集成電子學的關鍵問題，為製造帶有光源的大規模集成電路等方面開辟新的途徑。
  9. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  10. Another increasingly important ( actor is to be integrated with analog and digital circuits. for this reason, it is highly advantageous for the microwave components to be fabricated through a commercial cmos process. so we research the microwave transmission lines and apply it into phase shift

    微型硅基微波傳輸線是微波無源、有源器件及微波集成電路的重要構成基礎，本文首先對其工作原理、器件模擬、結構參數設計、制備及散射參數測試進行較深入全面的研究，並進一步將微波傳輸理論應用於mems移相器，對移相器的結構參數、相移特性及可靠性等進行了分析。
  11. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  12. The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen

    在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。
  13. This paper mainly described the research on rheological property, high thermal stability, flame retardant, the influence of catalyst and insulating heat conduction of organic silicon encapsulating materials, which greatly apply on electronic equipment and large scale integrated circuit and so forth

    摘要本文主要綜述了國內外用於電子元器件、大規模集成電路等高科技領域的有機硅灌封材料在流動、耐高溫、阻燃和絕緣導熱等方面的性能以及催化劑對灌封材料的影響的研究應用進展。
  14. Technology and development trend of si ic

    硅集成電路技術及發展趨勢
  15. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  16. The infrared component ( carborundum board, carborundum camp ) of carborundum, is used in the paint, food, medicine, print and dye the fabric extensively, binder, it is dry for integrated circuit to wait for, heat outside send out infrared electromagnetic wave organic matter in the course of heating far, high polymer and moisture son after drawing, produce member and atom resonance, make the object hot

    碳化硅紅外元件（碳化硅板、碳化硅營） ，廣泛用於油漆、食品、醫藥、印染織物，粘結劑，集成電路等乾燥，加熱遠外在加熱過程中發出紅外電磁波被有機物，高分子及水分子吸取后，產生分子和原子共振，使物體變熱。
  17. It also has short protection and voltage overshot protection block. devices and ics based on esoi have the advantages of not only cheaper substrate, good performance of soi technology, but also obtaining a certain breakdown voltage and optimization of self - heating effect

    基於esoi的器件及集成電路不僅襯底材料制備工藝簡單，硅層厚度均勻性好，器件及電路特性具有soi結構的優點，而且還兼顧一定的耐壓，對自加熱效應也得到優化。
  18. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  19. With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution

    隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。
  20. Specification for harmonized system of quality assessment for electronic components - blank detail specification : fusible link programmable bipolar read only memories, silicon monolithic integrated circuits

    電子元器件用質量評估協調體系規范.空白詳細規范:熔絲連接可編程只讀存貯器單晶硅集成電路
分享友人
分享到 Line

分享到臉書