空穴電流 的英文怎麼說

中文拼音 [kōngxuédiànliú]
空穴電流 英文
current of holes
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 穴 : 名詞1 （巖洞; 窟窿） cave; cavern; grotto 2 （動物的窩） den; hole 3 （墓穴） grave4 [中醫] （穴...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 空穴 : [電子學] hole; electron hole; cavity; positive hole
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Hh silc is found to have a more pronounced transient effect

    熱空穴應力導致的漏電流具有更加顯著的瞬態特性。
  2. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  3. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  4. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  5. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  6. Compared with green light - emitting device, blue oled has many problems such as brightness, efficiency, stability, and color saturation, in this study we investgaited the blue oleds systemically : 1 ) double heterosturcture oled was charaterized. due to the introducing of electron transport layer alq3 and hole - blocking layer balq3, the energy matching was more reasonable and the carrier injecting was more effective in the double - layer device. the maximum efficiency and luminance of this device attained to 1. 90 lm / w and 10, 000 cd / m2, respectively

    其次，由於一直以來藍光oled器件的研究處于相對落後的狀態，其發光亮度、效率、穩定性和色純度都無法綠光器件相比，所以本論文在以下幾個方面對藍光器件的性能進行了系統的研究: 1 ）研究了雙異質型藍光oled器件，由於本研究引入了空穴阻擋層，使得載流子的復合和激子的擴散被限定在發光層內，器件的發光效率達到了1 . 90lm / w ，最大亮度達到了10000cd / m2 ，比傳統結構器件的效率和亮度提高了約一個數量級; 2 ）制備了結構為ito / npb / balq3 / alq3 / mg : ag的oled器件，研究發現，當改變各有機層厚度時，器件的電致發光光譜發生了從綠光到藍光的移動。
  7. Secondly, we demonstrated the possibility of improving electron and hole injection and balance to poly ( phenelene vinylene ) derivatives by replacing oxadiazole segments

    利用空穴傳輸特性ppv鏈段上添加電子傳輸型基團的方法改善了兩種載流子注入和傳輸的平衡。
  8. Majority carrier - a carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an n - type area

    多數載流子-一種載流子，在半導體材料中起支配作用的空穴或電子，例如在n型中是電子。
  9. Since the carrier mobility in organic materials is very low, no collision excitation is possible. the short wavelength peak is due to direct bombardment by electrons from sic > 2. we name this luminescence as cathodoluminescence - like ( cl - like ) emission or solid state cathode luminescence because the energized electrons are accelerated in solid instead of in vacuum

    這樣在有機層中的電子數是nl n計n汁n ，空穴數是p n （ n是類陰極射線激發出的電子，也是類陰極射線激發出的空穴兒這兩類載流子的復合將比單純有機發光的復合nip增加了（ n計n葉n ）叮（ l n計n葉n ） n 。
  10. Appling p - n graded heterojunction instead of abrupt one is studied deeply in theory, and the conclusion is that it will enhance the current injection ratio, decrease the built - in voltage, improve the quality of the crystal and it will not affect the confinement to the hole

    在理論上提出在hb - led器件的dh結構中使用p - n結的漸變異質結替代現行的p - n突變異質結。分析採用異質結漸變方式將增加hb - led的電流注入比，減小內建電勢，改善晶體質量，並且不影響p - n結對空穴的限制。
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